High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current 2 A PC Collector Dissipation (TC = 25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C ©2005 Fairchild Semiconductor Corporation FJP3305 Rev. B 1 www.fairchildsemi.com FJP3305 High Voltage Fast-Switching NPN Power Transistor FJP3305 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 9 V 1 µA 1 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Cob Output Capacitance VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5Ω tON Turn On Time tSTG Storge Time tF Fall Time 19 8 35 40 4 MHz 65 pF 0.8 µs 4.0 µs 0.9 µs * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 19 ~ 28 26 ~ 35 2 FJP3305 Rev. B www.fairchildsemi.com FJP3305 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade) 100 5.0 VCE = 5V O 4.0 IB = 300mA 3.5 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.5 IB = 50mA Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1.0 0.5 1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 0.1 Figure 3. DC Current Gain (O-Grade) 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C hFE, DC CURRENT GAIN Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 10 0.1 Figure 5. Saturatin Voltage (O-Grade) 10 Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.1 1 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT 3 FJP3305 Rev. B 10 Figure 4. Saturation Voltage (R-Grade) 100 0.01 0.01 1 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com FJP3305 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time 10 10 tF & tSTG [µ s], SWITCHING TIME VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB O Ta = 25 C O 1 Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 tSTG 1 tF 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 10 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IB1=2A, RB2=0 1ms IC (Pulse) 10 500µs 5ms IC (DC) 1 0.1 O TC = 25 C Single Pulse VCC=50V, L=1mH 0.01 1 10 100 1 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 11. Power Derating 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE 4 FJP3305 Rev. B www.fairchildsemi.com FJP3305 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics FJP3305 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 5 FJP3305 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FJP3305 Rev. B www.fairchildsemi.com FJP3305 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS