MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain Supply Voltage VDD V 15 Gate Supply Voltage VGG V -10 Input Power Pin dBm 15 Flange Temperature Tf °C -30 ∼ +80 Storage Temperature Tstg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL Output Power at 1dB Gain P1dB CONDITIONS UNIT MIN. TYP. MAX. dBm 31.0 33.0 dB 21.0 25.0 dB ±2.5 Compression Point Power Gain at 1dB Gain G1dB Compression Point VDD= 10V VGG= -5V Gain Flatness ∆G Drain Current IDD A 1.4 1.8 ηadd % 14 dBc -42 -45 Power Added Efficiency rd 3 Order Intermodulation Distortion IM3 f = 9.5 – 12.0GHz 2 tone @ Po=19dBm(S.C.L.) uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar. 2006 TMD1013-1-431 PACKAGE OUTLINE (2-9E1D) 2.4±0.2 Unit in mm 0.5±0.2 m n p o 17.8 ± 0.2 q (Grounded) 13.4 ± 0.2 l jknrs: No Connection 8.8± 0.2 s r 7.6± 0.2 j k 5.2± 0.2 0.3± 0.2 0.25± 0.1 11 l: RF Input m: VGG o : No Connection (Open) p: VDD q : RF Output 11 : 2.4 MAX. 1±0.3 0.75±0.2 2.0±0.5 025.±0.2 8.35±0.2 0.1±0.05 2.0±0.5 Orientation Tab RECOMMENDED BIAS CONFIGURATION 7 : VDD 1pF 3:RF Input 1,000pF 10-50µF 8:RF Output TMD1013-1-431 50Ω Matching 50Ω Matching GND : Base Plate 4 : VGG 10-50µF 1,000pF 1pF HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. Flanges of devices should be attached using screws and washers. torque is 0.18-0.20 N·m. 2 Recommended