TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20D60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) A 3.2 2.8 9.0 Absolute Maximum Ratings (Ta = 25°C) 1.1 ± 0.15 Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Note 1) ID 20 Pulse (t = 1 ms) (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 190 W Single pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current IAR 20 A Repetitive avalanche energy EAR 19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 2.8 MAX. Symbol 0.75 ± 0.25 0.62 ± 0.15 DC Drain current Note: (Note 3) 12.8 ± 0.5 Characteristics Ф0.2 M A 2.54 A 0.6±0.1 15.0 ± 0.3 Ф3.65 ± 0.2 2.54 1 2 4.5 ± 0.2 • • • • Unit: mm 10.0 ± 0.3 9.5 ± 0.2 + 0.25 0.57 − 0.10 2.53 ± 0.2 3 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA ⎯ TOSHIBA 2-10V1A Weight : 1.35 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.658 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2008-07-02 TK20D60U Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 10 A ⎯ 0.165 0.19 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 10 A 3.0 12 ⎯ S Input capacitance Ciss ⎯ 1470 ⎯ Reverse transfer capacitance Crss ⎯ 150 ⎯ Output capacitance Coss ⎯ 3500 ⎯ ⎯ 40 ⎯ ⎯ 80 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-on time ton tf Turn-off time VOUT RL = 30 Ω 50 Ω Switching time Fall time ID = 10 A 10 V VGS 0V tr VDD ≈ 300 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 20 A pF ns ⎯ 12 ⎯ ⎯ 100 ⎯ ⎯ 27 ⎯ ⎯ 16 ⎯ ⎯ 11 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 20 A (Note 1) IDRP ⎯ ⎯ ⎯ 40 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 20 A, VGS = 0 V, ⎯ 450 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 8.1 ⎯ μC Marking K20D60U Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish 2 2008-07-02 TK20D60U ID – VDS 20 Common source Tc = 25°C Pulse test 7.5 8,10 Common source Tc = 25°C Pulse test 7 ID (A) 32 12 6.5 Drain current ID Drain current 8 10 (A) 16 ID – VDS 40 8 6 4 7.5 24 7 16 6.5 6 8 VGS = 5.5 V 0 0 1 2 3 Drain−source voltage 4 VDS VGS = 5.5 V 0 5 0 10 (V) 20 VDS (V) Drain−source voltage ID Drain current 24 16 100 Tc = −55°C 25 8 2 4 6 Gate−source voltage 8 VGS 8 6 4 ID = 20A 2 10 5 10 4 (V) 8 Drain−source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Tc = −55°C 100 1 1 Drain current 10 ID 16 VGS 20 (V) RDS (ON) − ID 1 25 0.1 0.1 12 Gate−source voltage ⎪Yfs⎪ − ID 10 (V) Common source Tc = 25°C Pulse test 0 0 100 Common source VDS = 10 V Pulse test 50 VDS – VGS Common source VDS = 20 V Pulse test 0 0 VDS 10 (A) 32 40 Drain−source voltage ID – VGS 40 30 Common source Tc = 25°C Pulse test VGS = 10,15 V 0.1 0.01 0.1 100 (A) 1 Drain current 3 10 ID 100 (A) 2008-07-02 TK20D60U IDR − VDS RDS (ON) – Tc ID = 20 A 0.3 10 5 0.2 0.1 −40 0 40 Case temperature 80 Tc 120 10 10 5 1 3 1 0.1 0 160 0.4 (°C) Vth (V) (pF) Ciss Ciss Gate threshold voltage (V) 1000 Coss Coss 100 Crss 10 Drain−source voltage Crss 80 120 2 1 Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 100 VDS 3 (V) −40 0 40 Case temperature Tc Dynamic input/output characteristics PD − Tc 250 VDS (V) (W) 500 PD 200 Drain−source voltage 150 100 50 40 80 Case temperature 160 (°C) 120 Tc 400 (°C) VDS 200 V 300 400 V 8 VGS 100 4 10 20 Total gate charge 4 12 VDD = 100 V 200 0 0 160 20 Common source ID = 20 A Tc = 25°C Pulse test 16 30 Qg (V) 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 4 VGS C VDS 5 10000 Capacitance 1.6 Vth − Tc C – VDS Drain power dissipation 1.2 0.8 Drain−source voltage 100000 0 0 VGS = 0 V Gate−source voltage 0 −80 Common source Tc = 25°C Pulse test (A) Common source VGS = 10 V Pulse test IDR 0.4 100 Drain reverse current Drain−source ON-resistance RDS (ON) (Ω) 0.5 0 40 (nC) 2008-07-02 TK20D60U rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 PDM 0.1 0.05 t Single pulse 0.01 10 μ T 0.01 0.02 Duty = t/T Rth (ch-c) = 0.658°C/W 100 μ 1m 10 m Pulse width 100 m 1 tw (s) Safe operating area EAS – Tch 100 200 ID max (Pulse) * ID max (Continuous) 1 ms * (A) 0.01 DC operation Tc = 25°C Avalanche energy ID Drain current 0.1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 EAS (mJ) 100 μs * 10 1 10 1 Drain−source voltage 100 VDS 120 80 40 0 25 VDSS max 10 160 50 75 100 125 Channel temperature (initial) 1000 150 Tch (°C) (V) BVDSS 15 V IAR −15 V VDD Waveform Test circuit RG = 25 Ω VDD = 90 V, L = 0.63 mH 5 VDS Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V DD ⎠ ⎝ VDSS 2008-07-02 TK20D60U RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-07-02