2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3907 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 500 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 23 Pulse (Note 1) IDP 92 Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 552 mJ Avalanche current IAR 23 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Drain current A 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.77 mH, IAR = 23 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-12-27 2SK3907 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 500 μA Drain cutoff current Drain-source breakdown voltage Min V (BR) GSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 11.5 A ⎯ 0.18 0.23 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 11.5 A 3.4 12 ⎯ S Input capacitance Ciss ⎯ 4250 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 420 ⎯ ⎯ 12 ⎯ ⎯ 45 ⎯ ⎯ 10 ⎯ ⎯ 80 ⎯ ⎯ 60 ⎯ ⎯ 50 ⎯ ⎯ 10 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton RL = 17.4 Ω 4.7 Ω Switching time Fall time ID = 11.5 A VOUT 10 V VGS 0V tr tf Turn-off time VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 23 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 23 A (Note 1) IDRP ⎯ ⎯ ⎯ 92 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 23 A, VGS = 0 V ⎯ ⎯ -1.7 V Reverse recovery time trr IDR = 23 A, VGS = 0 V, ⎯ 1350 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 24 ⎯ μC Marking TOSHIBA K3907 Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish 2 2008-12-27 2SK3907 ID – VDS ID – VDS 10 COMMON SOURCE Tc = 25°C PULSE TEST 16 50 8 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 20 5.7 12 5.5 8 5.3 5 4 COMMON SOURCE Tc = 25°C PULSE TEST 8 10 40 7 30 6.5 20 6 5.5 10 VGS = 5 V VGS = 4.5 V 0 0 1 2 3 4 0 5 0 DRAIN−SOURCE VOLTAGE VDS (V) 4 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 25 30 Tc = −55°C 100 20 10 0 0 2 4 6 8 GATE−SOURCE VOLTAGE VGS 16 12 8 ID = 23 A 4 5.75 0 10 0 (V) 4 COMMON SOURCE VDS = 20 V PULSE TEST 100 25 1 0.1 0.1 1 8 12 16 20 (V) RDS (ON) − ID 1000 Tc = −55°C 11.5 GATE−SOURCE VOLTAGE VGS DRAIN−SOURCE ON RESISTANCE RDS (ON) (mΩ) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 10 20 COMMON SOURCE Tc = 25°C PULSE TEST ⎪Yfs⎪ − ID 100 16 VDS – VGS 20 COMMON SOURCE VDS = 20 V PULSE TEST 40 12 DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 50 8 10 COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10 V 100 10 100 1 DRAIN CURRENT ID (A) 100 10 DRAIN CURRENT ID (A) 3 2008-12-27 2SK3907 IDR − VDS RDS (ON) – Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR (A) 800 600 ID = 23 A 400 11.5 200 5.75 0 −80 −40 0 40 80 CASE TEMPERATURE 120 COMMON SOURCE Tc = 25°C PULSE TEST 10 10 1 5 3 1 VGS = 0 V 0.1 0 160 −0.4 −0.8 Tc (°C) C – VDS Vth (V) 1000 Coss 100 Crss 10 DRAIN−SOURCE VOLTAGE 3 2 1 0 −80 100 VDS (V) 0 40 80 120 Tc (°C) 160 120 80 40 120 160 CASE TEMPERATURE Tc (°C) 40 80 VDS 400 16 200 300 12 100 VDD = 400 V 200 8 VGS 100 0 200 20 (V) DRAIN−SOURCE VOLTAGE VDS (V) 500 0 160 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 200 PD (W) −40 CASE TEMPERATURE PD – Tc DRAIN POWER DISSIPATION COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 4 GATE THRESHOLD VOLTAGE (pF) CAPACITANCE C Ciss COMMON SOURCE 10 VGS = 0 V f = 1 MHz Tc = 25°C PULSE TEST 1 0.1 1 −1.6 Vth − Tc 5 10000 0 −1.2 DRAIN−SOURCE VOLTAGE VDS (V) COMMON SOURCE ID = 23 A Tc = 25°C PULSE TEST 0 20 40 60 80 4 GATE−SOURCE VOLTAGE VGS DRAIN−SOURCE ON RESISTANCE RDS (ON) (mΩ) 1000 0 100 TOTAL GATE CHARGE Qg (nC) 4 2008-12-27 2SK3907 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 SINGLE PULSE 0.01 t 0.01 T Duty = t/T Rth (ch-c) = 0.833°C/W 0.001 10 μ 100 μ 1m 10 m PULSE WIDTH 100 m 1 tw (s) EAS – Tch SAFE OPERATING AREA 1000 AVALANCHE ENERGY EAS (mJ) 1000 ID max (PULSE) * 100 100 μs * ID max (CONTINUOUS) DRAIN CURRENT ID (A) 10 1 ms * 10 DC OPERATION Tc = 25℃ 1 800 600 400 200 0 25 50 75 100 CHANNEL TEMPERATURE (INITIAL) 125 150 Tch (°C) 0.1 *: SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature 0.01 1 10 VDSS max 100 15 V 1000 BVDSS IAR −15 V DRAIN−SOURCE VOLTAGE VDS (V) VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 1.77 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2008-12-27 2SK3907 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-12-27