2SK3474-01 FUJI POWER MOSFET200303 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID Ratings 150 120 ±33 ±4.1 *4 ±132 ±30 33 169 20 5 2.4 *4 150 +150 -55 to +150 Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C < *1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch =150°C *3 *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Remarks Equivalent circuit schematic (4) Drain(D) VGS=30V Ta=25°C VDS < =150V (1) Gate(G) (2) Source(S) [signal line] (3) Source(S) [power line] Ta=25°C IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Electrical characteristics atTc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Symbol V(BR)DSS VGS(th) VDS =150V VDS =120V VGS=±30V ID=11.5A IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr VGS=0V VGS=0V VDS=0V Typ. 150 3.0 Tch=25°C Tch=125°C VGS=10V ID=11.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=11.5A VGS=10V 8 RGS=10 Ω V CC =48V ID=23A VGS=10V L=228 µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C 10 54 16 1500 200 17 13 15 34 15 34 9 12.5 Max. 5.0 25 250 100 70 1730 300 26 20 23 51 23 51 13.5 19 33 1.10 0.13 0.6 1.60 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) *4 Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.833 87.0 52.0 Units °C/W °C/W °C/W 1 2SK3474-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 5 200 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) Allowable Power Dissipation PD=f(Tc) 175 4 150 125 PD [W] PD [W] 3 2 100 75 50 1 25 0 0 25 50 75 100 125 0 150 0 25 50 75 Tc [°C] Typical Output Characteristics 20V 125 150 Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C 50 100 Tc [°C] 10V ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 8V 7.5V 40 10 7.0V ID[A] ID [A] 30 6.5V 20 1 6.0V 10 VGS=5.5V 0.1 0 0 1 2 3 4 5 6 0 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance Typical Transconductance RDS(on)=f(ID):80µs Pulse test, Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 0.30 100 VGS= 5.5V 6.0V 7.0V 6.5V 7.5V RDS(on) [ Ω ] 0.25 0.20 gfs [S] 10 0.15 0.10 1 8V 10V 0.05 0.1 20V 0.00 0.1 1 10 ID [A] 100 0 5 10 15 20 25 30 35 40 45 50 ID [A] 2 2SK3474-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 200 7.0 6.5 180 6.0 RDS(on) [ m Ω ] 160 5.5 max. 5.0 VGS(th) [V] 140 4.5 120 typ. 4.0 100 3.5 max. min. 3.0 80 2.5 typ. 60 2.0 1.5 40 1.0 20 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 Tch [° C] -25 0 25 50 75 100 125 150 Tch [° C] Typical Gate Charge Characteristics Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=23A, Tch=25°C 10n 14 Vcc= 36V 12 Ciss 48V 1n 72V C [F] VGS [V] 10 8 Coss 6 100p 4 2 Crss 0 10p 0 5 10 15 20 25 30 35 40 45 50 10 -1 10 0 10 1 10 2 VDS [V] Qg [C] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode t=f(ID):Vcc=48V, VGS=10V, RG=10Ω IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 3 10 10 2 t [ns] IF [A] td(off) tf td(on) 10 1 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3474-01 FUJI POWER MOSFET Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 500 100 90 Rth(ch-a) [ C/W] IAS=14A o 400 IAS=20A EAS [mJ] 300 200 80 70 60 50 40 IAS=33A 30 20 100 10 0 0 0 25 50 75 100 125 150 0 Zth(ch-c) [°C/W] 10 1 10 0 1000 2000 3000 4000 5000 2 starting Tch [°C] Drain Pad Area [mm ] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 -3 10 10 0 t [sec] Avalanche Current I AV [A] 10 2 Single Pulse 10 1 10 0 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd 4