2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2SK3374 Switching Regulator Applications · Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) · Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kW) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 1 A Pulse (Note 1) IDP 2 A Drain power dissipation PD 1.3 W Single pulse avalanche energy (Note 2) EAS 122 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 0.13 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to150 °C Drain current JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch-a) 96.1 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 W, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK3374 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ¾ ¾ ±10 mA V (BR) GSS IG = ±10 mA, VDS = 0 V ±30 ¾ ¾ V IDSS VDS = 450 V, VGS = 0 V ¾ ¾ 100 mA Gate leakage current Drain-source breakdown voltage Test Condition Drain cut-OFF current V (BR) DSS ID = 10 mA, VGS = 0 V 450 ¾ ¾ V Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A ¾ 3.7 4.6 W Forward transfer admittance ïYfsï VDS = 10 V, ID = 0.5 A 0.3 0.7 ¾ S Input capacitance Ciss ¾ 180 ¾ Reverse transfer capacitance Crss ¾ 2 ¾ Output capacitance Coss ¾ 20 ¾ ¾ 7 ¾ ¾ 15 ¾ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr ton Switching time Fall time tf Turn-OFF time Duty < = 1%, tw = 10 ms toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT RL = 400 W 10 9 Turn-ON time ID = 0.5 A 10 V VGS 0V pF ns ¾ 30 ¾ ¾ 70 ¾ ¾ 5 ¾ ¾ 3 ¾ ¾ 2 ¾ VDD ~ - 200 V VDD ~ - 360 V, VGS = 10 V, ID = 1 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 1 A Pulse drain reverse current IDRP ¾ ¾ ¾ 2 A (Note 1) Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V ¾ ¾ -1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, ¾ 350 ¾ ns Qrr dIDR/dt = 100 A/ms ¾ 1.3 ¾ nC Reverse recovery charge Marking K3374 ※ ※ Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-09 2SK3374 ID - VDS 1.0 ID - VDS 2.0 Common source Ta = 25°C pulse test 10 5.75 5.5 8.0 1.6 0.4 5.0 Drain current 5.25 ID (A) ID Drain current 0.6 4.75 0.2 0 6.0 2 4 6 Drain-source voltage 8 VDS 5.75 1.2 5.5 0.8 5.25 5.0 0.4 VGS = 4.5 V 0 VGS = 4.5 V 0 10 0 10 (V) 20 (V) Common source VDS = 20 V pulse test VDS 50 (V) Common source Ta = 25°C pulse test 16 VDS (A) 1.2 Drain-source voltage ID Drain current 40 VDS - VGS 20 1.6 0.8 100 0.4 0 25 0 2 Ta = -55°C 4 6 Gate-source voltage 8 VGS 12 8 0.25 0 10 ID = 1 A 4 0 4 (V) 8 (S) ïYfsï 3 VDS = 20 V pulse test 1 Ta = -55°C Drain-source on resistance RDS (ON) (W) 25 100 0.3 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 Drain current 1 ID 16 VGS 20 (V) RDS (ON) - ID 50 Common source 0.5 0.5 12 Gate-source voltage ïYfsï - ID 5 Forward transfer admittance 30 Drain-source voltage ID - VGS 2.0 Common source Ta = 25°C pulse test 6.25 (A) 0.8 8.0 10 6.0 3 Common source 30 Ta = 25°C Pulse test 10 5 3 1 0.1 10 (A) 0.3 0.5 Drain current 3 3 1 ID 5 10 (A) 2002-08-09 2SK3374 IDR - VDS 10 Common source Common source (A) VGS = 10 V pulse test 12 Drain reverse current IDR 0.5 ID = 1A 8 0.25 4 Ta = 25°C 3 pulse test 1 0.3 0.1 10 3 0.03 1 -40 0 40 Ambient temperature 80 Ta 0.01 160 0 (°C) -0.2 -0.4 VGS = 0, -1 V -0.6 -0.8 Drain-source voltage VDS 5 Gate threshold voltage Vth (V) 100 50 30 Coss 10 5 Common source VGS = 0 V f = 1 MHz Ta = 25°C 4 3 2 1 Crss 1 3 5 Drain-source voltage 10 VDS 30 50 0 -80 100 (V) PD - Ta 80 1.6 0.8 0.4 80 120 Ambient temperature 160 160 Ta 180 VDS 20 16 90 300 12 VDS = 360 V 200 8 VGS 100 0 0 200 Common source ID = 1 A Ta = 25°C pulse test 400 VDS Drain-source voltage 1.2 40 120 Dynamic input/output characteristics (V) (W) 40 500 PD Drain power dissipation 0 Ambient temperature Ta (°C) 2.0 0 0 -40 2 4 4 6 (V) Capacitance C (pF) Ciss 0.3 0.5 (V) Common source VDS = 10 V ID = 1 mA pulse test 300 1 0.1 -1.2 Vth - Ta Capacitance - VDS 500 3 -1.0 VGS 0 -80 8 Gate-source voltage Drain-source on resistance RDS (ON) (W) RDS (ON) - Ta 16 0 10 Total gate charge Qg (nC) (°C) 4 2002-08-09 2SK3374 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 0.5 Duty = 0.5 0.3 0.2 0.1 0.05 0.03 0.01 0.1 0.05 0.02 Single Pulse 0.01 PDM t 0.003 T Duty = t/T Rth (ch-a) = 96.1°C/W 0.001 0.0005 10 m 100 m 1m 10 m 1 100 m Pulse width tw 10 (S) EAS - Tch Safe operating area 10 150 (mJ) 100 ms * ID max (pulsed) * Avalanche energy EAS ID max (continuous) (A) 1 1 ms * ID Drain current 100 0.1 DC operation Ta = 25°C 0.01 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 Drain-source voltage 100 VDS 90 60 30 0 25 VDSS max 10 120 50 75 100 125 Channel temperature (initial) Tch 1000 150 (°C) (V) 15 V BVDSS IAR -15 V VDD Test circuit RG = 25 W VDD = 90 V, L = 203 mH 5 VDS Wave form Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 V VDSS DD è ø 2002-08-09 2SK3374 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-08-09