2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) • Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V ID 75 IDP 300 PD 125 W EAS 731 mJ Avalanche current IAR 75 A Repetitive avalanche energy (Note 3) EAR 12.5 Channel temperature Tch Storage temperature range Tstg DC (Note 1) Pulse (t < = 1 ms) Drain current (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) A Thermal resistance, channel to case ― JEITA SC-97 mJ TOSHIBA 2-9F1B 150 °C Weight: 0.74 g (typ.) −55 to 150 °C Thermal Characteristics Characteristics JEDEC Symbol Max Unit Rth (ch-c) 1.00 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Note 1: Please use devices on conditions that the channel temperature is below 150°C. 4 Note 2: VDD = 24 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 75 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 Marking ※ Lot Number K3439 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 1 2001-12-11 2SK3439 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 V V Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time Switching time Fall time VDS = 10 V, ID = 1 mA 1.3 2.5 VGS = 10 V, ID = 38 A 3.8 5.0 VGS = 4 V, ID = 38 A 5.0 10 VDS = 10 V, ID = 38 A 35 70 5450 620 1850 15 30 65 110 116 84 32 VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton ID = 38 A VOUT 10 V VGS 0V tf VDD ≈ 15 V Turn-off time RL = 0.39 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage toff mΩ S pF ns Duty < = 1%, tw = 10 µs Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ≈ 34 V, VGS = 10 V, ID = 75 A nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don’t connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 75 A Pulse drain reverse current (Note 1, Note 5) IDRP1 300 A Continuous drain reverse current (Note 1, Note 5) IDR2 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 4 A Forward voltage (diode) VDS2F −1.5 V IDR1 = 75 A, VGS = 0 V Reverse recovery time trr IDR = 75 A, VGS = 0 V, 120 ns Reverse recovery charge Qrr dIDR/dt = 50 A/µs 180 nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. 2 2001-12-11 2SK3439 ID – VDS 6 4 10 3.5 80 (A) (A) 3.3 ID Drain current 40 3.0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 3.2 60 40 3.0 20 VGS = 2.8 V VGS = 2.8 V 20 0 0 0 0 1.0 1 (V) 2 Tc = 25°C (V) Common source VDS = 10 V 120 Drain-source voltage VDS (A) (V) Common source ID Drain current 5 0.8 Pulse test 80 40 Tc = −55°C 100 0 0 Pulse test 0.6 0.4 ID = 75 A 0.2 38 19 25 2 4 Gate-source voltage 0 0 6 VGS 5 (V) 10 15 Gate-source voltage Yfs – ID VGS 20 (V) RDS (ON) – ID 500 30 Common source 300 Tc = 25°C 100 Drain-source on resistance RDS (ON) (mΩ) Tc = −55°C Yfs (S) 4 VDS – VGS ID – VGS Forward transfer admittance 3 Drain-source voltage VDS 160 100 25 50 30 10 Common source 3 5 10 30 50 Drain current ID (A) 100 Pulse test 10 VGS = 4 V 5 10 3 1 VDS = 10 V Pulse test 5 3 1 Common source Tc = 25°C Pulse test 3.4 6 8 10 60 4 ID 80 ID – VDS 100 Common source Tc = 25°C Pulse test Drain current 100 0.5 1 300 3 5 Drain current 3 30 10 ID 50 100 (A) 2001-12-11 2SK3439 RDS (ON) – Tc IDR – VDS 6 300 Common source ID = 75 A 19, 38 4 3 2 1 100 10 50 IDR (A) VDS = 10 V Pulse test 30 Drain reverse current Drain-source on resistance RDS (ON) (m Ω) 5 10 3 5 5 3 VGS = 0 V 1 1 Common source 0.5 0.3 Tc = 25°C Pulse test 0 −80 −40 0 40 80 Case temperature Tc 120 0.1 0 160 −0.2 (°C) −0.4 −0.6 −0.8 Drain-source voltage VDS Gate threshold voltage Vth (V) Common source Coss 1000 Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 3 10 Drain-source voltage VDS ID = 1 mA Pulse test 2 1 30 0 −80 (V) −40 0 80 40 Case temperature Tc PD – Tc Drain-source voltage VDS 120 80 40 80 120 Case temperature Tc 160 (°C) VGS 30 VDD = 24 V 20 8 12 10 4 40 80 Total gate charge 4 16 12 6 VDS 0 0 200 20 Common source ID = 75 A Tc = 25°C 40 Pulse test VGS (V) 160 PD (W) (°C) 50 40 160 Dynamic input/output characteristics 200 Drain power dissipation 120 (V) 0.3 VDS = 10 V 3 120 Qg 160 Gate-source voltage Capacitance C (pF) 3000 10 0 (V) 4 Ciss 100 0.1 −1.2 Vth – Tc Capacitance – VDS 10000 300 −1.0 0 200 (nC) 2001-12-11 2SK3439 Normalized transient thermal impedance rth (t)/Rth (ch-c) rth – tw 3 1 Duty = 0.5 0.3 0.2 PDM 0.1 0.1 t 0.05 T 0.02 0.03 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W Single 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 (s) EAS – Tch Safe operating area 300 10 1000 ID max (pulsed) * 100 µs * (mJ) 100 ID max (continuous) Avalanche energy EAS 1 ms * Drain current ID (A) 30 10 DC operation Tc = 25°C 3 800 600 400 200 1 *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature 0.1 0.1 1 0 25 50 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 10 Drain-source voltage VDS 100 (V) 15 V BVDSS IAR 0V VDD Test circuit RG = 25 Ω VDD = 24 V, L = 100 µH 5 VDS Waveform Ε AS = 1 B VDSS ⋅ L ⋅ I2 ⋅ B − 2 V VDSS DD 2001-12-11 2SK3439 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2001-12-11