2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 µA (VDS = 200 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage VGSS ±30 V (Note 1) ID 25 Pulse (Note 1) IDP 100 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 488 mJ Avalanche current IAR 25 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.00 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. 4 Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Marking 1 2 3 Part No. (or abbreviation code) K3444 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 2SK3444 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-off current IDSS VDS = 200 V, VGS = 0 V ⎯ ⎯ 100 µA Drain-source breakdown voltage Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V ⎯ 65 82 mΩ S Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 12.5 A Forward transfer admittance |Yfs| VDS = 10 V, ID = 12.5 A Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Turn-on time tr ton Turn-off time 4.7 Ω Switching time Fall time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 12.5 A VOUT VGS 10 V 0V RL = 8.0 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ∼ − 100 V Duty < = 1%, tw = 10 µs VDD ∼ − 160 V, VGS = 10 V, ID = 25 A 5 10 ⎯ ⎯ 2080 ⎯ ⎯ 280 ⎯ ⎯ 1060 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ⎯ 10 ⎯ ⎯ 40 ⎯ ⎯ 44 ⎯ ⎯ 21 ⎯ ⎯ 23 ⎯ pF ns nC Note 4: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement. Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 25 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 100 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 ⎯ ⎯ ⎯ 4 A Forward voltage (diode) VDS2F IDR1 = 25 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr ⎯ 290 ⎯ ns Reverse recovery charge Qrr IDR = 25 A, VGS = 0 V, dIDR/dt = 100 A/µs ⎯ 2.2 ⎯ µC Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2004-07-06 2SK3444 ID – VDS 50 15 Common ID – VDS 100 10 9.5 20 15 Tc = 25°C Pulse test 12 (A) 11 8.5 8 7.5 10 ID 30 80 9 Common source 60 10 Drain current ID 40 Tc = 25°C Pulse test Drain current (A) source 40 9 8 20 7 VGS = 6.5 V 0 0 2 4 6 Drain-source voltage 8 VGS = 7 V 0 0 10 VDS (V) 4 8 Common source Tc = −55°C 100 10 25 0 0 Tc = 25°C (V) VDS = 10 V Pulse test VDS Drain current 20 4 8 Pulse test 3 2 ID = 25 A 1 12 6 12 Gate-source voltage 16 VGS 0 0 20 (V) 4 8 Common source VGS 20 (V) Common source Tc = 25°C Pulse test Drain-source on resistance RDS (ON) (mΩ) (S) Forward transfer admittance ⎪Yfs⎪ 16 RDS (ON) – ID 1000 VDS = 10 V Pulse test Tc = −55°C 10 25 100 1 1 12 Gate-source voltage ⎪Yfs⎪ – ID 100 VDS (V) VDS – VGS Drain-source voltage ID 30 20 4 Common source (A) 40 16 Drain-source voltage ID – VGS 50 12 10 Drain current 100 15 10 1 100 ID (A) VGS = 10 V 10 Drain current 3 100 ID (A) 2004-07-06 2SK3444 IDR – VDS 100 Common source Tc = 25°C 6 ID = 25 A 80 40 Pulse test 10 10 5 1 3 1 0 −80 −40 0 40 80 Case temperature Tc 120 0.1 0 160 −0.2 (°C) −0.4 −0.6 Capacitance – VDS Vth (V) Gate threshold voltage −1.4 −1.6 VDS (V) Coss 100 Crss f = 1 MHz Tc = 25°C 1 10 Drain-source voltage 5 4 3 2 Common source 1 V DS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 40 Case temperature 100 80 Tc 120 160 (°C) VDS (V) PD – Tc Dynamic input/output characteristics 200 20 (V) 200 VDS 160 Tc = 25°C Pulse test VDS PD 160 Common source ID = 25 A Drain-source voltage 120 80 40 40 80 120 Case temperature Tc 160 VDS = 40 V 120 (°C) 12 80 160 80 8 VGS 40 0 200 16 4 0 20 40 60 80 VGS (V) (pF) Capacitance C 1000 VGS = 0 V (W) −1.2 Vth – Tc Common source Drain power dissipation −1.0 6 Ciss 10 0 −0.8 Drain-source voltage 10000 10 0.1 VGS = 0 V Gate-source voltage 120 Common source 12 VGS = 10 V Pulse test Drain reverse current IDR (A) Drain-source on resistance RDS (ON) (mΩ) RDS (ON) – Tc 160 0 100 Total gate charge Qg (nC) 4 2004-07-06 2SK3444 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 10 µ 100 µ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 500 (mJ) 1000 EAS ID max (pulsed) * 100 µs* 1 ms* Drain current ID ID max (continuous) Avalanche energy (A) 100 10 10 DC operation Tc = 25°C 400 300 200 100 0 25 50 1 75 100 125 Channel temperature (initial) Tch 150 (°C) * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly VDSS max with increase in temperature. 0.1 1 10 Drain-source voltage 100 15 V 1000 BVDSS IAR −15 V VDS (V) VDS VDD Waveform Test circuit RG = 25 Ω VDD = 50 V, L = 1.26 mH 5 Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 ⎝ VDSS − VDD ⎠ 2004-07-06 2SK3444 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06