TOSHIBA 2SK3444

2SK3444
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
•
Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 10 S (typ.)
•
Low leakage current: IDSS = 100 µA (VDS = 200 V)
•
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
25
Pulse (Note 1)
IDP
100
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
488
mJ
Avalanche current
IAR
25
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
A
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Max
Unit
Rth (ch-c)
1.00
°C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Note 1: Ensure that the channel temperature does not exceed 150°C.
4
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
1
2
3
Part No. (or abbreviation code)
K3444
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2004-07-06
2SK3444
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-off current
IDSS
VDS = 200 V, VGS = 0 V
⎯
⎯
100
µA
Drain-source breakdown voltage
Gate threshold voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
5.0
V
⎯
65
82
mΩ
S
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 12.5 A
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 12.5 A
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Turn-on time
tr
ton
Turn-off time
4.7 Ω
Switching time
Fall time
tf
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = 12.5 A
VOUT
VGS 10 V
0V
RL = 8.0 Ω
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD ∼
− 100 V
Duty <
= 1%, tw = 10 µs
VDD ∼
− 160 V, VGS = 10 V,
ID = 25 A
5
10
⎯
⎯
2080
⎯
⎯
280
⎯
⎯
1060
⎯
⎯
20
⎯
⎯
40
⎯
⎯
10
⎯
⎯
40
⎯
⎯
44
⎯
⎯
21
⎯
⎯
23
⎯
pF
ns
nC
Note 4: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement.
Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1
⎯
⎯
⎯
25
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1
⎯
⎯
⎯
100
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2
⎯
⎯
⎯
1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2
⎯
⎯
⎯
4
A
Forward voltage (diode)
VDS2F
IDR1 = 25 A, VGS = 0 V
⎯
⎯
−1.5
V
Reverse recovery time
trr
⎯
290
⎯
ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V,
dIDR/dt = 100 A/µs
⎯
2.2
⎯
µC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2SK3444
ID – VDS
50
15
Common
ID – VDS
100
10
9.5
20
15
Tc = 25°C
Pulse test
12
(A)
11
8.5
8
7.5
10
ID
30
80
9
Common source
60
10
Drain current
ID
40 Tc = 25°C
Pulse test
Drain current
(A)
source
40
9
8
20
7
VGS = 6.5 V
0
0
2
4
6
Drain-source voltage
8
VGS = 7 V
0
0
10
VDS (V)
4
8
Common source
Tc = −55°C
100
10
25
0
0
Tc = 25°C
(V)
VDS = 10 V
Pulse test
VDS
Drain current
20
4
8
Pulse test
3
2
ID = 25 A
1
12
6
12
Gate-source voltage
16
VGS
0
0
20
(V)
4
8
Common source
VGS
20
(V)
Common source
Tc = 25°C
Pulse test
Drain-source on resistance
RDS (ON) (mΩ)
(S)
Forward transfer admittance ⎪Yfs⎪
16
RDS (ON) – ID
1000
VDS = 10 V
Pulse test
Tc = −55°C
10
25
100
1
1
12
Gate-source voltage
⎪Yfs⎪ – ID
100
VDS (V)
VDS – VGS
Drain-source voltage
ID
30
20
4
Common source
(A)
40
16
Drain-source voltage
ID – VGS
50
12
10
Drain current
100
15
10
1
100
ID (A)
VGS = 10 V
10
Drain current
3
100
ID (A)
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2SK3444
IDR – VDS
100
Common source
Tc = 25°C
6
ID = 25 A
80
40
Pulse test
10
10
5
1
3
1
0
−80
−40
0
40
80
Case temperature
Tc
120
0.1
0
160
−0.2
(°C)
−0.4
−0.6
Capacitance – VDS
Vth (V)
Gate threshold voltage
−1.4
−1.6
VDS (V)
Coss
100
Crss
f = 1 MHz
Tc = 25°C
1
10
Drain-source voltage
5
4
3
2
Common source
1 V
DS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
40
Case temperature
100
80
Tc
120
160
(°C)
VDS (V)
PD – Tc
Dynamic input/output characteristics
200
20
(V)
200
VDS
160
Tc = 25°C
Pulse test
VDS
PD
160
Common source
ID = 25 A
Drain-source voltage
120
80
40
40
80
120
Case temperature
Tc
160
VDS = 40 V
120
(°C)
12
80
160
80
8
VGS
40
0
200
16
4
0
20
40
60
80
VGS (V)
(pF)
Capacitance
C
1000
VGS = 0 V
(W)
−1.2
Vth – Tc
Common source
Drain power dissipation
−1.0
6
Ciss
10
0
−0.8
Drain-source voltage
10000
10
0.1
VGS = 0 V
Gate-source voltage
120
Common source
12
VGS = 10 V
Pulse test
Drain reverse current IDR (A)
Drain-source on resistance
RDS (ON)
(mΩ)
RDS (ON) – Tc
160
0
100
Total gate charge Qg (nC)
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2SK3444
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
PDM
0.1
0.1
t
0.05
0.02
0.01
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
Single pulse
0.01
10 µ
100 µ
1m
10 m
Pulse width
100 m
tw
1
(S)
Safe operating area
EAS – Tch
500
(mJ)
1000
EAS
ID max (pulsed) *
100 µs*
1 ms*
Drain current
ID
ID max (continuous)
Avalanche energy
(A)
100
10
10
DC operation
Tc = 25°C
400
300
200
100
0
25
50
1
75
100
125
Channel temperature (initial)
Tch
150
(°C)
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
VDSS max
with increase in temperature.
0.1
1
10
Drain-source voltage
100
15 V
1000
BVDSS
IAR
−15 V
VDS (V)
VDS
VDD
Waveform
Test circuit
RG = 25 Ω
VDD = 50 V, L = 1.26 mH
5
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
⎝ VDSS − VDD ⎠
2004-07-06
2SK3444
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-07-06