TOSHIBA 2SK3442

2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and
Motor Drive Applications
·
·
·
·
Unit: mm
Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
High forward transfer admittance: ïYfsï = 28 S (typ.)
Low leakage current: IDSS = 100 µA (VDS = 100 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kW)
VDGR
100
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
45
Pulse
(Note 1)
IDP
180
(Tc = 25°C)
PD
125
W
JEDEC
Single pulse avalanche energy
(Note 2)
EAS
468
mJ
JEITA
SC-97
Avalanche current
IAR
45
A
TOSHIBA
2-9F1B
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Drain current
Drain power dissipation
A
―
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Max
Unit
Rth (ch-c)
1.00
°C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2
4
VDD = 25 V, Tch = 25°C (initial), L = 373 mH, RG = 25 W, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1
2002-08-29
2SK3442
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
VGS = ±25 V, VDS = 0 V
IGSS
VDS = 100 V, VGS = 0 V
Min
Typ.
Max
Unit
¾
¾
±10
mA
¾
¾
100
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
¾
¾
V
Vth
VDS = 10 V, ID = 1 mA
2.0
¾
4.0
V
Drain cut-off current
IDSS
Drain-source breakdown voltage
Test Condition
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 23 A
¾
15
20
mW
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 23 A
14
28
¾
S
¾
4100
¾
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
340
¾
¾
980
¾
¾
15
¾
RL = 2.2 W
Gate threshold voltage
¾
45
¾
¾
20
¾
VDD ~
- 50 V
¾
95
¾
¾
85
¾
¾
50
¾
¾
35
¾
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
ton
4.7 W
Switching time
Fall time
tf
Turn-off time
ID = 23 A
10 V
VGS
0V
Duty <
= 1%, tw = 10 ms
toff
Total gate charge (gate-source plus
gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
VOUT
VDD ~
- 80 V, VGS = 10 V, ID = 45 A
pF
ns
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1
¾
¾
¾
45
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1
¾
¾
¾
180
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2
¾
¾
¾
1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2
¾
¾
¾
4
A
Forward voltage (diode)
VDS2F
¾
¾
-1.5
V
IDR = 45 A, VGS = 0 V
Reverse recovery time
trr
IDR = 45 A, VGS = 0 V,
¾
160
¾
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/ms
¾
512
¾
nC
Note 5: IDR1, IDRP1: drain, flowing current value between the S2 pin, open the S1 pin
IDR2, IDRP2: drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
※ Lot Number
K3442
※
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2002-08-29
2SK3442
ID – VDS
100
ID – VDS
200
15
Common source
8
Tc = 25°C
10
7
10
8
80 Pulse test
7.5
(A)
6.5
40
VGS = 6 V
ID
60
120
Drain current
Drain current
ID
(A)
160
80
20
40
0
0
7
6.5
VGS = 6 V
Common source
0
0.4
0.8
1.2
Drain-source voltage
1.6
VDS
2.0
0
4
(V)
8
12
Drain-source voltage
ID – VGS
Tc = 25°C Pulse test
16
VDS
VDS – VGS
Common source
Common source
Tc = 25°C
4
Pulse test
VDS
(A)
25
60
Drain-source voltage
ID
Drain current
(V)
VDS = 10 V
Pulse test
80
Tc = 100°C
40
20
3
2
11
1
23
ID = 45 A
-55
4
8
12
Gate-source voltage
16
VGS
0
0
20
4
(V)
8
ïYfsï – ID
16
VGS
(V)
RDS (ON) – ID
Common source
300
Common source
300
VDS = 10 V
Tc = 25°C
Pulse test
100
50
30
25
Tc = 100°C
-55
5
Pulse test
100
50
30
VGS = 10 V
15
10
5
3
3
1
0.1
20
500
Drain-source on resistance
RDS (ON) (mW)
(S)
ïYfsï
Forward transfer admittance
12
Gate-source voltage
500
10
(V)
5
100
0
0
20
0.3 0.5
1
3
Drain current
5
ID
10
30 50
1
1
100
(A)
3
5
10
30 50
Drain current
3
ID
100
300 500 1000
(A)
2002-08-29
2SK3442
IDR – VDS
Common source
VGS = 10 V
Pulse test
(A)
45
30
20
11
ID = 23 A
10
-40
0
40
80
Case temperature Tc
120
100
30
10
10
5
3
1
0
160
-0.2
(°C)
-0.4
3
VGS = 0 V
-0.6
-0.8
-1.0
Drain-source voltage
-1.2
-1.4
VDS
(V)
6
Common source
10000
Ciss
5000
Capacitance C
Gate threshold voltage Vth (V)
(pF)
30000
3000
1000
Coss
500 Common source
300 VGS = 0 V
f = 1 MHz
Tc = 25°C
100
0.1
0.3 0.5
1
Crss
3
5
Drain-source voltage
10
30 50
VDS
VDS = 10 V
5
ID = 1 mA
Pulse test
4
3
2
1
0
-80
100
-40
(V)
0
40
80
Case temperature Tc
PD – Tc
120
160
(°C)
Dynamic input/output characteristics
100
(V)
200
160
80
Common source
ID = 45 A
Tc = 25°C
Pulse test
VDS
20
16
Drain-source voltage
120
80
40
10
0
40
80
120
Case temperature Tc
160
VGS
VDS
PD
(W)
-1.8
Vth – Tc
Capacitance – VDS
50000
Drain power dissipation
-1.6
60
(°C)
12
20
VDD = 80 V
40
40
8
VGS
20
0
0
200
(V)
0
-80
Common source
Tc = 25°C
300 Pulse test
4
40
80
120
160
Gate-source voltage
40
1000
Drain reverse current IDR
Drain-source on resistance
RDS (ON)
(mW)
RDS (ON) – Tc
50
0
200
Total gate charge Qg (nC)
4
2002-08-29
2SK3442
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
3
1
Duty = 0.5
0.3 0.2
PDM
0.1
0.1
t
0.05
0.02
T
0.03
0.01
Duty = t/T
Rth (ch-c) = 1.0°C/W
Single pulse
0.01
10 m
100 m
1m
10 m
Pulse width
100 m
tw
1
(s)
EAS – Tch
Safe operating area
500
(mJ)
1000
300
ID max (pulsed) *
ID max (continuous)
30
Drain current
ID
(A)
Avalanche energy EAS
100 ms *
1 ms *
100
10
10
DC operation
400
300
200
100
3
0
25
50
1
* Single nonrepetitive pulse
Tc = 25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
1
3
10
30
Drain-source voltage
75
100
125
Channel temperature (initial) Tch
15 V
VDSS max
100
VDS
300
1000
150
(°C)
BVDSS
IAR
0V
(V)
VDD
Test circuit
RG = 25 W
VDD = 25 V, L = 373 mH
5
175
VDS
Wave form
Ε AS =
æ
ö
1
B VDSS
÷
× L × I2 × ç
çB
÷
2
è VDSS VDD ø
2002-08-29
2SK3442
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-08-29