2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications · · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: ïYfsï = 28 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 100 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kW) VDGR 100 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 45 Pulse (Note 1) IDP 180 (Tc = 25°C) PD 125 W JEDEC Single pulse avalanche energy (Note 2) EAS 468 mJ JEITA SC-97 Avalanche current IAR 45 A TOSHIBA 2-9F1B Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current Drain power dissipation A ― Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.00 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2 4 VDD = 25 V, Tch = 25°C (initial), L = 373 mH, RG = 25 W, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 This transistor is an electrostatic sensitive device. Please handle with caution. 2 3 1 2002-08-29 2SK3442 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Gate leakage current VGS = ±25 V, VDS = 0 V IGSS VDS = 100 V, VGS = 0 V Min Typ. Max Unit ¾ ¾ ±10 mA ¾ ¾ 100 mA V (BR) DSS ID = 10 mA, VGS = 0 V 100 ¾ ¾ V Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V Drain cut-off current IDSS Drain-source breakdown voltage Test Condition Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 23 A ¾ 15 20 mW Forward transfer admittance ïYfsï VDS = 10 V, ID = 23 A 14 28 ¾ S ¾ 4100 ¾ VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 340 ¾ ¾ 980 ¾ ¾ 15 ¾ RL = 2.2 W Gate threshold voltage ¾ 45 ¾ ¾ 20 ¾ VDD ~ - 50 V ¾ 95 ¾ ¾ 85 ¾ ¾ 50 ¾ ¾ 35 ¾ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton 4.7 W Switching time Fall time tf Turn-off time ID = 23 A 10 V VGS 0V Duty < = 1%, tw = 10 ms toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT VDD ~ - 80 V, VGS = 10 V, ID = 45 A pF ns nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don’t connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ¾ ¾ ¾ 45 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ¾ ¾ ¾ 180 A Continuous drain reverse current (Note 1, Note 5) IDR2 ¾ ¾ ¾ 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 ¾ ¾ ¾ 4 A Forward voltage (diode) VDS2F ¾ ¾ -1.5 V IDR = 45 A, VGS = 0 V Reverse recovery time trr IDR = 45 A, VGS = 0 V, ¾ 160 ¾ ns Reverse recovery charge Qrr dIDR/dt = 50 A/ms ¾ 512 ¾ nC Note 5: IDR1, IDRP1: drain, flowing current value between the S2 pin, open the S1 pin IDR2, IDRP2: drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking ※ Lot Number K3442 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-29 2SK3442 ID – VDS 100 ID – VDS 200 15 Common source 8 Tc = 25°C 10 7 10 8 80 Pulse test 7.5 (A) 6.5 40 VGS = 6 V ID 60 120 Drain current Drain current ID (A) 160 80 20 40 0 0 7 6.5 VGS = 6 V Common source 0 0.4 0.8 1.2 Drain-source voltage 1.6 VDS 2.0 0 4 (V) 8 12 Drain-source voltage ID – VGS Tc = 25°C Pulse test 16 VDS VDS – VGS Common source Common source Tc = 25°C 4 Pulse test VDS (A) 25 60 Drain-source voltage ID Drain current (V) VDS = 10 V Pulse test 80 Tc = 100°C 40 20 3 2 11 1 23 ID = 45 A -55 4 8 12 Gate-source voltage 16 VGS 0 0 20 4 (V) 8 ïYfsï – ID 16 VGS (V) RDS (ON) – ID Common source 300 Common source 300 VDS = 10 V Tc = 25°C Pulse test 100 50 30 25 Tc = 100°C -55 5 Pulse test 100 50 30 VGS = 10 V 15 10 5 3 3 1 0.1 20 500 Drain-source on resistance RDS (ON) (mW) (S) ïYfsï Forward transfer admittance 12 Gate-source voltage 500 10 (V) 5 100 0 0 20 0.3 0.5 1 3 Drain current 5 ID 10 30 50 1 1 100 (A) 3 5 10 30 50 Drain current 3 ID 100 300 500 1000 (A) 2002-08-29 2SK3442 IDR – VDS Common source VGS = 10 V Pulse test (A) 45 30 20 11 ID = 23 A 10 -40 0 40 80 Case temperature Tc 120 100 30 10 10 5 3 1 0 160 -0.2 (°C) -0.4 3 VGS = 0 V -0.6 -0.8 -1.0 Drain-source voltage -1.2 -1.4 VDS (V) 6 Common source 10000 Ciss 5000 Capacitance C Gate threshold voltage Vth (V) (pF) 30000 3000 1000 Coss 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25°C 100 0.1 0.3 0.5 1 Crss 3 5 Drain-source voltage 10 30 50 VDS VDS = 10 V 5 ID = 1 mA Pulse test 4 3 2 1 0 -80 100 -40 (V) 0 40 80 Case temperature Tc PD – Tc 120 160 (°C) Dynamic input/output characteristics 100 (V) 200 160 80 Common source ID = 45 A Tc = 25°C Pulse test VDS 20 16 Drain-source voltage 120 80 40 10 0 40 80 120 Case temperature Tc 160 VGS VDS PD (W) -1.8 Vth – Tc Capacitance – VDS 50000 Drain power dissipation -1.6 60 (°C) 12 20 VDD = 80 V 40 40 8 VGS 20 0 0 200 (V) 0 -80 Common source Tc = 25°C 300 Pulse test 4 40 80 120 160 Gate-source voltage 40 1000 Drain reverse current IDR Drain-source on resistance RDS (ON) (mW) RDS (ON) – Tc 50 0 200 Total gate charge Qg (nC) 4 2002-08-29 2SK3442 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 3 1 Duty = 0.5 0.3 0.2 PDM 0.1 0.1 t 0.05 0.02 T 0.03 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 10 m 100 m 1m 10 m Pulse width 100 m tw 1 (s) EAS – Tch Safe operating area 500 (mJ) 1000 300 ID max (pulsed) * ID max (continuous) 30 Drain current ID (A) Avalanche energy EAS 100 ms * 1 ms * 100 10 10 DC operation 400 300 200 100 3 0 25 50 1 * Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 Drain-source voltage 75 100 125 Channel temperature (initial) Tch 15 V VDSS max 100 VDS 300 1000 150 (°C) BVDSS IAR 0V (V) VDD Test circuit RG = 25 W VDD = 25 V, L = 373 mH 5 175 VDS Wave form Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 è VDSS VDD ø 2002-08-29 2SK3442 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-08-29