2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ) 2SK3761 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 13.4 min 13.4 min. Maximum Ratings (Ta = 25°C) Characteristics 6.6 max. 2.7 Low drain-source ON resistance: R DS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1.5 max 1.5 max 3.93.9max max. • • • • 6.6 max 3.84±0.2 0.81 0.45 0.45 0.81 max Symbol Rating Unit Drain-source voltage V DSS 600 V Drain-gate voltage (RGS = 20 kΩ) V DGR 600 V Gate-source voltage V GSS ±30 V ID 6 A IDP 24 Drain power dissipation (Tc = 25°C) PD 74 W Single pulse avalanche energy (Note 2) EA S 54 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 7.4 mJ Channel temperature Tch 150 °C JEDEC TO-220AB Storage temperature range Tstg -55~150 °C JEITA SC-46 TOSHIBA ― DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.68 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W 2.7 2.7 2.54 2.54 1 1. 2. 3. 2 3 Gate Drain(HEAT SINK) Source Weight : 2.0g(typ.) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 2.6 mH, IAR = 6 A, R G = 25 Ω 1 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2004-02-26 1.3 2SK3761 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit V GS = ±25 V, V DS = 0 V ±10 µA V (BR) GSS ID = ±10 µA, V GS = 0 V ±30 V IDSS V DS = 600 V, V GS = 0 V 100 µA V (BR) DSS ID = 10 mA, V GS = 0 V 600 V V th V DS = 10 V, ID = 1 mA 2.0 4.0 V Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition Gate threshold voltage Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 3 A 0.9 1.25 Ω Forward transfer admittance Yf s V DS = 10 V, ID = 3 A 1.2 5.0 S Input capacitance Ciss 1050 Reverse transfer capacitance Crss 10 Output capacitance Coss 110 V OUT 20 RL = 66 Ω 40 35 130 28 16 12 Rise time V DS = 25 V, V GS = 0 V, f = 1 MHz ID = 3 A 10 V V GS 0V tr Turn-on time ton Fall time tf Turn-off time toff 50 Ω Switching time V DD ∼ − 200 V Duty < = 1%, tw = 10 µs Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd V DD ∼ − 400 V, V GS = 10 V, ID = 6 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IDR 6 A IDRP 24 A Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) V DSF IDR = 6 A, V GS = 0 V −1.7 V Reverse recovery time trr IDR = 6 A, V GS = 0 V, 1000 ns Reverse recovery charge Qrr dIDR /dt = 100 A/µs 7 µC Forward voltage (diode) Marking ※ Lot Number ※ K3761 TYPE Date Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2 2004-02-26 2SK3761 ID – V DS COMMON SOURCE Tc = 25°C PULSE TEST 4 ID – V DS 10 15 4.8 COMMON SOURCE Tc = 25°C PULSE TEST 10,15 10 6 5 5.2 DRAIN CURRENT DI (A) DRAIN CURRENT DI (A) 5 4.6 3 4.4 2 4.2 1 5 8 4.8 6 4.6 4 4.4 4.2 2 VGS = 4 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS VGS = 4 V 0 0 10 (V) 10 ID – V GS DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT DI (A) VDS = 20 V PULSE TEST 6 4 Tc = −55°C 100 25 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 Tc = 25℃ 8 PULSE TEST 6 ID = 6 A 4 3 2 1.5 0 0 4 8 12 16 GATE-SOURCE VOLTAGE VGS 20 (V) RDS (ON) – ID 10 Tc = −55°C 25 100 1 COMMON SOURCE VDS = 20 V PULSE TEST 1 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( mΩ) FORWARD TRANSFER ADMITTANCE Yf s (S) (V) COMMON SOURCE Yf s – ID 0.1 0.1 50 10 (V) 100 10 40 V DS – V GS COMMON SOURCE 2 30 DRAIN-SOURCE VOLTAGE VDS 10 8 20 10 DRAIN CURRENT DI (A) COMMON SOURCE Tc = 25°C PULSE TEST 1 VGS = 10 V､ 15V 0.1 0.1 1 10 DRAIN CURRENT DI (A) 3 2004-02-26 2SK3761 RDS (ON) – Tc IDR – V DS 10 COMMON SOURCE DRAIN REVERSE CURRENT DR I (A) PULSE TEST 4 3 ID = 6A 3 2 VGS = 10 V 1.5 1 0 −80 −40 0 40 80 120 COMMON SOURCE 5 3 1 0.5 10 5 0.3 3 0.1 0 160 Tc = 25°C PULSE TEST CASE TEMPERATURE Tc (°C) −0.2 −0.4 CAPACITANCE – V DS −1 −1.2 V th – Tc GATE THRESHOLD VOLTAGE V th (V) CAPACITANCE C (pF) −0.8 5 Ciss 1000 Coss 100 10 COMMON SOURCE VGS = 0 V f = 1 MHz Crss Tc = 25°C 1 0.1 1 3 5 10 30 50 4 3 2 COMMON SOURCE 1 100 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 −40 0 40 80 120 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD – Tc DYNAMIC INPUT / OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE VDS (V) 80 DRAIN POWER DISSIPATION PD (W) −0.6 DRAIN-SOURCE VOLTAGE VDS (V) 10000 60 40 20 0 0 VGS = 0, −1 V 1 40 80 120 160 CASE TEMPERATURE Tc (°C) 160 500 400 20 VDS 16 VDD = 100 V 200 300 12 400 200 VGS 8 COMMON SOURCE ID = 6 A 100 4 Tc = 25°C PULSE TEST 0 0 10 20 30 40 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( m Ω) 5 0 50 TOTAL GATE CHARGE Qg (nC) 4 2004-02-26 2SK3761 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) r th – tw 10 1 Duty=0.5 0.2 PDM 0.1 SINGLE PULSE 0.1 t 0.05 T 0.02 Duty = t/T Rth (ch-c) = 1.68°C/W 0.01 0.01 10μ 100μ 1ｍ 10ｍ 100ｍ 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA EA S – Tch 100 60 ID max ( PULSED) * AVALANCHE ENERGY EA S (mJ) 50 DRAIN CURRENT DI (A) 100 µs * 10 ID max ( CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25°C 40 30 20 10 ※ SINGLE NONREPETITIVE PULSE 0 25 Tc=25℃ 0.1 CURVES MUST BE DERATED 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) LINEARLY WITH INCREASE IN TEMPERATURE. VDSS max 0.01 1 10 100 1000 15 V DRAIN-SOURCE VOLTAGE VDS (V) BVDSS IAR −15 V V DD TEST CIRCUIT RG = 25 Ω V DD = 90 V, L = 2.6 mH 5 V DS WAVE FORM Å AS = 1 BVDSS ⋅ L ⋅ I2 ⋅ B 2 − V VDSS DD 2004-02-26 2SK3761 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-02-26