TOSHIBA 2SK3799

2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3799
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance
: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
Low leakage current : IDSS = 100μA (max) (VDS = 720 V)
Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
ID
8
A
Drain current
DC
(Note 1)
IDP
24
A
Drain power dissipation
Pulse (Note 1)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
1080
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
JEITA
Channel temperature
Tch
150
°C
TOSHIBA
Storage temperature range
Tstg
−55~150
°C
Weight: 1.7 g (typ.)
1. Gate
2. Drain
3. Source
—
JEDEC
SC-67
2
Thermal Characteristics
Characteristic
2-10U1B
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25Ω, IAR = 8 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-01-24
2SK3799
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
—
—
±10
µA
V (BR) GSS
IG = ±10 µA, VGS = 0 V
±30
—
—
V
IDSS
VDS = 720 V, VGS = 0 V
—
—
100
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
—
—
V
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
—
1.0
1.3
Ω
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 4 A
3.5
6.0
—
S
Input capacitance
Ciss
—
2200
—
Crss
Output capacitance
Coss
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
10 V
ID = 4 A
0V
RL = 100Ω
Reverse transfer capacitance
VGS
ton
4.7Ω
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge (Gate-source
plus gate-drain)
tf
toff
Qgs
Gate-drain (“miller”) charge
Qgd
45
—
190
—
—
25
—
—
65
—
pF
Output
VDD ≈ 400 V
Duty ≤ 1%, tw = 10 µs
Qg
Gate-source charge
—
—
VDD ≈ 400 V, VGS = 10 V, ID = 8 A
ns
—
20
—
—
120
—
—
60
—
—
34
—
—
26
—
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
8
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
24
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
—
—
−1.7
V
trr
IDR = 8 A, VGS = 0 V
dlDR / dt = 100 A / µS
—
1700
—
ns
—
23
—
µC
Reverse recovery time
Reverse recovery charge
Qrr
Marking
K3799
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-01-24
2SK3799
ID – VDS
ID – VDS
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
15
8
(A)
10
6
5.5
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
10
5.25
6
5
4
4.75
2
VGS = 4.5 V
16
15
10
12
6
5.5
8
5
4
VGS = 4.5 V
0
0
2
4
6
8
DRAIN−SOURCE VOLTAGE
0
10
0
VDS (V)
4
8
DRAIN−SOURCE VOLTAGE
ID – VGS
VDS
16
25
8
Tc = −55°C
100
4
0
0
2
4
6
8
GATE−SOURCE VOLTAGE
4
4
2
0
4
8
12
16
20
VGS (V)
RDS (ON) − ID
10
COMMON SOURCE
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
ID = 8 A
8
GATE−SOURCE VOLTAGE
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = −55°C
100
25
1
VDS (V)
12
VGS (V)
10
1
0.1
16
0
10
⎪Yfs⎪ − ID
100
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
(V)
COMMON SOURCE
VDS = 20 V
PULSE TEST
12
16
VDS – VGS
20
DRAIN−SOURCE VOLTAGE
DRAIN CURRENT ID
(A)
20
12
10
Tc = 25°C
PULSE TEST
VGS = 10 V
1
0.1
100
DRAIN CURRENT ID (A)
1
10
100
DRAIN CURRENT ID (A)
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2SK3799
RDS (ON) − Tc
IDR − VDS
100
COMMON SOURCE
VGS = 10 V
PULSE TEST
4
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
5
3
ID = 8 A
2
4
2
1
0
−80
−40
0
40
80
CASE TEMPERATURE
120
Tc
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
1
5
VGS = 0 V
3
0.1
160
10
−0.4
0
(°C)
−0.8
−1.2
DRAIN−SOURCE VOLTAGE
C − VDS
−1.6
VDS (V)
Vth − Tc
5
(V)
10000
Vth
4
1000
GATE THRESHOLD VOLTAGE
Coss
100
Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
10
DRAIN−SOURCE VOLTAGE
1
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80
100
−40
(W)
(V)
PD
VDS
500
DRAIN−SOURCE VOLTAGE
60
40
20
40
80
CASE TEMPERATURE
80
Tc
120
160
(°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
80
DRAIN POWER DISSIPATION
40
CASE TEMPERATURE
VDS (V)
PD – Tc
0
0
0
120
Tc
400
(°C)
VDS
300
16
VDS = 400 V
200
8
VGS
100
4
20
40
60
TOTAL GATE CHARGE
4
20
12
100
200
0
0
160
COMMON SOURCE
ID = 8 A
Tc = 25°C
PULSE TEST
(V)
1
0.1
2
80
VGS
10
3
GATE−SOURCE VOLTAGE
CAPACITANCE
C (pF)
Ciss
0
100
Qg (nC)
2005-01-24
2SK3799
rth – tw
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
T
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.5°C/W
0.001
10μ
100μ
1ｍ
10ｍ
PULSE WIDTH
100ｍ
1
tw (s)
SAFE OPERATING AREA
EAS – Tch
100
(mJ)
2000
ID max (PULSE) *
ID max (CONTINUOUS)
AVALANCHE ENERGY EAS
DRAIN CURRENT ID
(A)
100 μs *
10
1 ms *
1
DC OPERATION
Tc = 25°C
0.1
*
SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly
0.01
1
10
with increase in temperature.
10
100
DRAIN−SOURCE VOLTAGE
1200
800
400
0
25
VDSS max
1000
1600
50
75
100
125
CHANNEL TEMPERATURE (INITIAL)
10000
150
Tch
(°C)
VDS (V)
15 V
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 30.9 mH
5
VDS
WAVE FORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2005-01-24
2SK3799
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2005-01-24