TOSHIBA 2SK3466

2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
Chopper Regulator
·
Unit: mm
Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
·
High forward transfer admittance: ïYfsï = 4.0 S (typ.)
·
Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
·
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kW)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Pulse
(Note 1)
IDP
20
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Drain current
A
Thermal resistance, channel to case
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Thermal Characteristics
Characteristics
JEDEC
Symbol
Max
Unit
Rth (ch-c)
2.5
°C/W
Note 1: Please use devises on condition that the channel temperature
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W,
IAR = 5 A
4
1
3
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-02-06
2SK3466
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
¾
¾
100
mA
¾
¾
V
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
Vth
VDS = 10 V, ID = 1 mA
2.0
¾
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
¾
1.35
1.50
W
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 5 A
2.5
4.0
¾
S
Input capacitance
Ciss
¾
780
¾
Reverse transfer capacitance
Crss
¾
60
¾
Output capacitance
Coss
¾
200
¾
¾
12
¾
¾
25
¾
Gate threshold voltage
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turn-ON time
ID = 2.5 A
10 V
VGS
0V
ton
Switching time
RL = 90 W
15 W
Fall time
Output
tf
Turn-OFF time
Duty <
= 1%, tw = 10 ms
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
pF
ns
¾
15
¾
¾
60
¾
¾
17
¾
¾
11
¾
¾
6
¾
VDD ~
- 225 V
VDD ~
- 400 V, VGS = 10 V, ID = 5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDSF
¾
¾
¾
5
A
Pulse drain reverse current
IDRP
¾
¾
¾
20
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
¾
¾
-1.7
V
Reverse recovery time
trr
IDR = 5 A, VGS = 0 V,
¾
1400
¾
ns
Qrr
dIDR/dt = 100 A/ms
¾
9
¾
mC
Reverse recovery charge
Marking
※ Lot Number
K3466
※
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
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2002-02-06
2SK3466
ID – VDS
5
ID – VDS
10, 15
Common source
10
6
4 Pulse test
15
Common source
5.5
Tc = 25°C
10
6
Tc = 25°C
8 Pulse test
4.75
4.5
ID
2
5
6
Drain current
ID
3
Drain current
(A)
(A)
5.25
4
1
5.5
5
2
4.5
VGS = 4 V
0
0
2
4
6
Drain-source voltage
8
VDS
VGS = 4 V
0
0
10
10
(V)
20
ID – VGS
VDS
50
(V)
VDS – VGS
20
Common source
Common source
Tc = -55°C
(V)
VDS = 20 V
8 Pulse test
25
Tc = 25°C
16
Pulse test
VDS
(A)
6
Drain-source voltage
ID
40
Drain-source voltage
10
Drain current
30
100
4
2
12
8
ID = 5 A
4
2.5
1.2
0
0
2
4
6
Gate-source voltage
8
VGS
0
0
10
4
(V)
8
Gate-source voltage
ïYfsï - ID
Common source
Tc = -55°C
VDS = 20 V
5 Pulse test
25
100
3
1
0.5
0.3
0.1
16
VGS
20
(V)
RDS (ON) - ID
10
Drain-source ON resistance
RDS (ON) (9)
Forward transfer admittance |Yfs|
(S)
10
12
Common source
Tc = 25°C
5 Pulse test
3
VGS = 10 V
15
1
0.5
0.3
0.3
0.5
3
1
Drain current
ID
5
10
0.1
(A)
0.3
0.5
1
Drain current
3
3
ID
5
10
(A)
2002-02-06
2SK3466
RDS (ON) - Tc
IDR - VDS
Common source
VGS = 10 V
Pulse test
Common source
ID = 5 A
2.5
3
Tc = 25°C
(A)
1.2
2
1
Pulse test
3
1
10
0.5
5
0.3
3
1
-40
0
80
40
Case temperature Tc
120
0.1
0
160
(°C)
-0.2
-0.4
Ciss
Gate threshold voltage Vth (V)
VDS
-1.2
(V)
500
300
100
Coss
50
30
Common source
VGS = 0 V
10 f = 1 MHz
Tc = 25°C
5
0.1
0.3 0.5
1
Crss
3
5
Drain-source voltage
10
30 50
VDS
4
3
2
1
0
-80
100
Common source
VDS = 10 V
ID = 1 mA
Pulse test
-40
(V)
0
40
80
Case temperature Tc
PD - Tc
(V)
(W)
500
Drain-source voltage
40
20
120
Case temperature Tc
(°C)
160
VDS
VDD = 100 V
300
(°C)
12
200
400
200
8
VGS
100
0
0
200
20
Common source
ID = 5 A
Tc = 25°C
Pulse test
16
400
VDS
60
80
160
Dynamic input/output characteristics
80
40
120
5
10
15
(V)
(pF)
Capacitance C
-1.0
5
1000
PD
-0.8
Vth - Tc
Capacitance – VDS
Drain power dissipation
-0.6
Drain-source voltage
2000
0
0
VGS = 0, -1 V
VGS
0
-80
4
20
Gate-source voltage
4
10
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (9
5
0
25
Total gate charge Qg (nC)
4
2002-02-06
2SK3466
1
Duty = 0.5
0.5
rth (t)/Rth (ch-c)
Normalized transient thermal impedance
rth - tw
3
0.3
0.2
0.1
0.1
0.05
PDM
0.05 0.02
0.03 0.01
t
Single pulse
T
0.01
Duty = t/T
Rth (ch-c) =2.5°C/W
0.005
0.003
10 m
30 m
100 m
300 m
1m
3m
10 m
Pulse width
30 m
tw
100 m
300 m
200
(mJ)
50
30 ID max (pulsed) *
Avalanche energy EAS
100 ms *
Drain current
ID
(A)
10
ID max (continuous) *
3
1 ms *
1
DC operation
Tc = 25°C
0.5
0.3
* Single nonrepetitive
0.1
pulse Tc = 25°C
0.05
Curves must be derated
3
5
10
160
120
80
40
0
25
linearly with increase in
50
30 50
Drain-source voltage
100
VDS
75
100
125
Channel temperature (initial) Tch
VDSS max
temperature.
0.01
1
10
EAS – Tch
100
0.03
3
(s)
Safe operating area
5
1
(°C)
150
300 500 1000
(V)
15 V
BVDSS
IAR
-15 V
VDD
Test circuit
RG = 25 W
VDD = 90 V, L = 12.2 mH
5
VDS
Wave form
Ε AS =
æ
ö
1
B VDSS
÷
× L × I2 × ç
çB
÷
2
V
VDSS
DD
è
ø
2002-02-06
2SK3466
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
6
2002-02-06
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.