2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 µA (VDS = 30 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 75 Pulse (Note 1) IDP 300 Drain power dissipation PD 125 W Single pulse avalanche energy (Note 2) EAS 731 mJ Avalanche current IAR 75 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A Thermal resistance, channel to case ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Thermal Characteristics Characteristics JEDEC Symbol Max Unit Rth (ch-c) 1.00 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. 4 1 Note 2: VDD = 25 V, Tch = 25°C (initial), L = 95 µH, IAR = 75 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 2002-03-04 2SK3389 Electrical Characteristics (Note 4) (Tc = 25°C) Characteristics Symbol Gate leakage current Test Condition VGS = ±25 V, VDS = 0 V IGSS Drain cut-off current Drain-source breakdown voltage Min Typ. Max Unit ±10 µA IDSS VDS = 30 V, VGS = 0 V 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 38 A 3.8 5.0 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 38 A 35 70 S Input capacitance Ciss 3530 Reverse transfer capacitance Crss 570 Output capacitance Coss 1870 10 25 20 65 62 43 19 Rise time tr VGS ton Switching time Fall time tf Turn-off time VDD ∼ − 15 V toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 38 A VOUT 10 V 0V 4.7 Ω Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz RL = 0.39 Ω Gate threshold voltage Duty < = 1%, tw = 10 µs VDD ∼ − 24 V, VGS = 10 V, ID = 75 A pF ns nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don’t connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 75 A Pulse drain reverse current (Note 1, Note 5) IDRP1 300 A Continuous drain reverse current (Note 1, Note 5) IDR2 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 4 A Forward voltage (diode) VDS2F IDR1 = 75 A, VGS = 0 V −1.5 V Reverse recovery time trr IDR = 75 A, VGS = 0 V, 120 ns Reverse recovery charge Qrr dIDR/dt = 50 A/µs 180 nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking ※ Lot Number K3389 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-03-04 2SK3389 ID – VDS 100 80 Common source Tc = 25°C Pulse test 10 5.75 8 Common source Tc = 25°C Pulse test 8 6.5 6 160 ID 10 Drain current 5.25 60 6 (A) 5.5 (A) ID Drain current ID – VDS 200 5 40 4.75 20 120 5.5 80 5 40 VGS = 4.5 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS VGS = 4.5 V 0 0 1.0 (V) 2 4 6 Drain-source voltage VDS Common source (V) VDS = 10 V Pulse test 40 Tc = 100°C Drain-source voltage VDS (A) ID Drain current 80 (V) 0.5 Common source 120 10 VDS – VGS ID – VGS 200 160 8 −55 Tc = 25°C 0.4 Pulse test 0.3 ID = 75 A 0.2 35 0.1 15 25 0 0 2 4 6 Gate-source voltage 8 VGS 0 0 10 4 (V) 8 Gate-source voltage Yfs – ID (S) Yfs VGS 20 (V) 100 Common source Common source VDS = 10 V Tc = 25°C Pulse test −55 25 100 Drain-source on resistance RDS (ON) (mΩ) Forward transfer admittance 16 RDS (ON) – ID 1000 Tc = 100°C 10 1 1 12 100 10 Drain current ID Pulse test 10 VGS = 10 V 15 V 1 0.1 1 1000 (A) Drain current 3 100 10 ID 1000 (A) 2002-03-04 2SK3389 RDS (ON) – Tc IDR – VDS Common source VGS = 10 V Pulse test Common source 35 6 ID = 70 15 4 2 0 −80 −40 Tc = 25°C (A) IDR 8 1000 Drain reverse current Drain-source on resistance RDS (ON) (m Ω) 10 0 40 80 Case temperature Tc 120 Pulse test 100 10 5 10 3 1 VGS = 0 1 0 160 0.2 (°C) 0.4 0.6 1.0 0.8 Drain-source voltage VDS 1.2 (V) Vth – Tc Capacitance – VDS 5 100000 Capacitance Gate threshold voltage Vth (V) 10000 Ciss C (pF) Common source Coss 1000 Crss 100 Common source VGS = 0 V f = 1 MHz VDS = 10 V ID = 1 mA 4 Pulse test 3 2 1 Tc = 25°C 10 0 −80 100 Drain-source voltage VDS (V) PD – Tc 80 120 160 (°C) Dynamic input/output characteristics 160 Drain-source voltage VDS 120 80 40 40 80 120 Case temperature Tc 160 30 (°C) 12 6 VDS VDD = 24 V 12 20 VGS 10 0 0 200 16 Common source ID = 75 A Tc = 25°C Pulse test (V) (V) (W) 40 40 PD Drain power dissipation 0 Case temperature Tc 200 10 0 −40 20 4 4 40 Total gate charge 8 60 Qg VGS 1 Gate-source voltage 10 0.1 0 80 (nC) 2002-03-04 2SK3389 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 T 0.02 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W Single 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 (s) EAS – Tch Safe operating area 1000 1000 100 Aavalanche energy DC operation Tc = 25°C 10 *: Single nonrepetitive pulse Tc = 25°C 1 Curves must be derated linearly with increase in temperature 0.1 0.1 EAS 1 ms * ID max (continuous) ID (A) (mJ) 100 µs * ID max (pulsed) * Drain current 10 1 800 600 400 200 VDSS max 10 Drain-source voltage VDS 0 25 100 50 (V) 75 100 125 150 Channel temperature (initial) Tch (°C) 15 V BVDSS IAR 0V VDD Test circuit RG = 25 Ω VDD = 25 V, L = 95 µH 5 VDS Waveform Ε AS = 1 B VDSS ⋅ L ⋅ I2 ⋅ B − 2 V VDSS DD 2002-03-04 2SK3389 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-03-04