2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6 Pulse (Note 1) IDP 18 Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAR 317 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current 1: Gate 2: Drain 3: Source A ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.5 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 2009-09-29 2SK4013 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Drain-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3 A 2.5 5.0 ⎯ S Input capacitance Ciss ⎯ 1400 ⎯ Reverse transfer capacitance Crss ⎯ 30 ⎯ Output capacitance Coss ⎯ 130 ⎯ ⎯ 25 ⎯ ⎯ 80 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr VOUT 0V ton RL= 133 Ω 50 Ω Turn-ON time ID = 3 A 10 V VGS Switching time VDD ∼ − 400 V ns ⎯ 65 ⎯ toff ⎯ 220 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 45 ⎯ Gate-source charge Qgs ⎯ 25 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 20 ⎯ Fall time tf Turn-OFF time pF Duty ≤ 1%, tw = 10 μs VDD ∼ − 400 V, VGS = 10 V, ID = 6 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 18 A (Note 1) Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 6 A, VGS = 0 V, ⎯ 1100 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K4013 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4013 ID − VDS COMMON SOURCE Common source Tc = 25°C Tc ＝ 25°C PULSE TEST Pulse test 4 8,10 ID − VDS 10 6 Common 8,10 source Ta=25℃ Pulse test 5.5 5.5 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 5.25 3 5.25 5 2 5 1 8 6 5.75 6 5.5 4 5.25 5 2 VGS=4.5V VGS=4.5V 0 0 0 2 4 6 DRAIN−SOURCE VOLTAGE 10 0 DRAIN−SOURCE VOLTAGE VDS (V) 12 8 Tc = 100°C Ta=100℃ -55 25 0 2 4 6 GATE−SOURCE VOLTAGE VGS 50 COMMON SOURCE Tc Common = 25°C source PULSETa=25℃ TEST Pulse test 6 6 4 3 2 ID = 1.5 A 10 0 (V) 4 8 20 16 12 GATE−SOURCE VOLTAGE VGS (V) RDS (ON) − ID 10.00 DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) Common source V DS=20V Pulse test 10 40 VDS − VGS ⎪Yfs⎪ − ID 100 FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 8 30 8 0 0 20 10 Common source V DS=20V Pulse test 4 10 DRAIN−SOURCE VOLTAGE VDS (V) ID − VGS 16 DRAIN CURRENT ID (A) VDS 8 (V) 25 -55 Tc = 100°C Ta=100℃ 1 0.1 Common source V GS=10V Tc=25℃ Pulse test 1.00 0.10 0.1 1 10 DRAIN CURRENT ID (A) 100 0.01 3 0.1 1 DRAIN CURRENT ID (A) 10 2009-09-29 2SK4013 RDS (ON) − Tc Common source V GS=10V Pulse test 4 7 6 3 3 2 ID=1.5A 1 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 1 3 10 VGS=0､-1V 1 0 160 -0.2 -0.4 Vth (V) GATE THRESHOLD VOLTAGE Ciss 1000 Coss 100 Crss 10 -1 -1.2 120 160 4 3 2 Common source V DS=10V ID=1mA Pulse test 1 0 1 10 DRAIN−SOURCE VOLTAGE VDS (V) 100 -80 -40 0 40 80 CASE TEMPERATURE Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN−SOURCE VOLTAGE VDS (V) 450 40 20 0 0 40 80 120 15 200 300 10 VDS = 400 V 100 150 0 0 160 CASE TEMPERATURE Tc (℃) Common source ID = 6 A Tc = 25°C Pulse test VDS (V) PD - Tc 60 5 VGS 20 40 60 80 GATE−SOURCE VOLTAGE VGS 0.1 DRAIN POWER DISSIPATIOND P(W) -0.8 Vth − Tc 5 Common source V GS=0V f=1MHz Tc=25℃ -0.6 DRAIN−SOURCE VOLTAGE VDS (V) C – VDS 10000 (pF) Common source Tc=25℃ Pulse test 0.1 0 CAPACITANCE C IDR − VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 5 0 100 TOTAL GATE CHARGE Qg (nC) 4 2009-09-29 2SK4013 rth – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 0.001 10μ SINGLE PULSE 100μ Duty = t/T Rth (ch-c) = 2.78°C/W 1ｍ 10ｍ 100ｍ PULSE WIDTH tw 1 (s) SAFE OPERATING AREA EAS - Tch 100 400 350 AVALANCHE ENERGY E AVALANCHE ENERGY E (mJ)(mJ) ASAS ID max (PULSE) * DRAIN CURRENT ID (A) 10 100 μs * 10 ID max (CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25°C 0.1 *: SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with VDSS max increase in temperature 0.01 1 10 100 1000 DRAIN−SOURCE VOLTAGE I 10000 300 250 200 150 100 50 0 25 VDS 50 75 100 CHANNEL TEMPERATURE (INITIAL) T 125 ( ) 150 CHANNEL TEMPERATURE (INITIAL)cH T℃ch (°C) V 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 14.5 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2009-09-29 2SK4013 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29