2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V (Note 1) ID 2.5 Pulse (t = 1 ms) (Note 1) IDP 7.5 Drain power dissipation (Tc = 25°C) PD 40 W JEDEC Single pulse avalanche energy (Note 2) EAS 216 mJ JEITA Avalanche current IAR 2.5 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C DC Drain current 1: Gate 2: Drain 3: Source A ― SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 1 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature 3 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2010-05-06 2SK3566 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 5.6 6.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 50 ⎯ VOUT ⎯ 20 ⎯ RL = 133 Ω ⎯ 60 ⎯ ⎯ 30 ⎯ ⎯ 100 ⎯ ⎯ 12 ⎯ ⎯ 7 ⎯ ⎯ 5 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 1.5 A 10 V VGS 0V tr tf Turn-off time VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID =2.5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 2.5 A (Note 1) IDRP ⎯ ⎯ ⎯ 7.5 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 2.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 2.5 A, VGS = 0 V, ⎯ 720 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 3.6 ⎯ μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3566 Please contact your TOSHIBA sales representative for details as to Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-05-06 2SK3566 ID – VDS ID – VDS 8 6 5.5 10 5.25 1.2 (A) 1.6 COMMON SOURCE Tc = 25°C PULSE TEST 3 DRAIN CURRENT ID DRAIN CURRENT ID (A) 2 5 0.8 4.75 4. 5 0.4 2.5 COMMON SOURCE Tc = 25°C PULSE TEST 10 8 6 5.5 2 5.25 1.5 5 1 4.75 0.5 4. 5 VGS = 4 V 0 0 4 8 12 16 DRAIN-SOURCE VOLTAGE 20 VDS VGS = 4 V 0 0 24 (V) 12 ID – VGS VDS (V) PULSE TEST DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID VDS = 20 V 3 2 Tc = −55°C 100 25 0 0 2 6 4 8 GATE-SOURCE VOLTAGE 10 VGS 12 COMMON SOURCE Tc = 25℃ PULSE TEST 30 ID = 2.5 A 20 1.5 10 0.8 0 0 4 Tc = −55°C 25 100 1 0.1 COMMON SOURCE VDS = 20 V PULSE TEST 1 DRAIN CURRENT ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 12 16 VGS 20 (V) RDS (ON) – ID 100 0.1 8 GATE-SOURCE VOLTAGE ⎪Yfs⎪ – ID 0.01 0.01 (V) 40 (V) 10 1 VDS VDS – VGS COMMON SOURCE 1 36 DRAIN-SOURCE VOLTAGE 5 4 24 10 (A) COMMON SOURCE Tc = 25°C PULSE TEST 10 1 0.01 VGS = 10 V 0.1 1 DRAIN CURRENT ID 3 10 (A) 2010-05-06 2SK3566 RDS (ON) – Tc IDR – VDS 10 COMMON SOURCE COMMON SOURCE PULSE TEST DRAIN REVERSE CURRENT IDR (A) 16 12 ID = 1.5A 8 VGS = 10 V 0.8 4 Tc = 25°C 5 PULSE TEST 3 1 0.5 0.3 1 10 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc 160 (°C) −0.4 −0.8 CAPACITANCE – VDS VDS (V) Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) Ciss (pF) 100 Coss 10 COMMON SOURCE Crss VGS = 0 V Tc = 25°C 1 10 DRAIN-SOURCE VOLTAGE VDS VDS = 10 V 1 ID = 1 mA PULSE TEST (V) −40 0 40 80 CASE TEMPERATURE 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) DRAIN-SOURCE VOLTAGE 40 30 20 10 120 CASE TEMPERATURE COMMON SOURCE 100 50 80 2 0 −80 PD – Tc 40 3 160 Tc 200 (°C) 500 20 (V) 1 0.1 4 400 16 VDS 200 300 12 VDD = 100 V VGS 200 8 400 COMMON SOURCE ID = 2.5 A 100 PULSE TEST 0 0 5 10 TOTAL GATE CHARGE 4 4 Tc = 25°C 15 Qg 20 0 VGS C CAPACITANCE −1.6 5 f = 1 MHz DRAIN POWER DISSIPATION PD (W) −1.2 DRAIN-SOURCE VOLTAGE 1000 0 0 VGS = 0V 3 0.1 0 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 20 (nC) 2010-05-06 2SK3566 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t SINGLE PULSE 0.01 T Duty Duty = t/T = t/T Rth Rth = 3.125°C/W = 1.25°C/W (ch-c) (ch-c) 0.001 10μ 100μ 1ｍ 10ｍ PULSE WIDTH 100ｍ 1 tw (s) SAFE OPERATING AREA EAS – Tch 250 ID max (PULSED) * 100 μs * ID max (CONTINUOUS) 1 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 10 1 ms * DC OPERATION Tc = 25°C 0.1 0.01 1 10 * SINGLE NONREPETITIVE PULSE Tc=25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 10 100 DRAIN-SOURCE VOLTAGE VDS 150 100 50 0 25 VDSS max 1000 200 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) 10000 (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 63.4mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-05-06 2SK3566 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-05-06