2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V (Note 1) ID 5 Pulse (Note 1) IDP 15 DC Drain current A 1. GATE 2. DRAIN (HEAT SINK) Drain power dissipation (Tc=25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 351 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 4.6 g (typ.) Storage temperature range Tstg −55 to150 °C 3. SOURCE JEDEC ― JEITA ― 2-16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.7mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK3700 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10μA, VDS = 0V ±30 ― ― V IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS IG = 10mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 2.0 2.5 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3 A 2.0 4.5 ⎯ S Input capacitance Ciss ⎯ 1150 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss ⎯ 100 ⎯ ⎯ 30 ⎯ ⎯ 70 ⎯ ⎯ 60 ⎯ ⎯ 170 ⎯ ⎯ 28 ⎯ ⎯ 17 ⎯ ⎯ 11 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz ID = 3 A 10 V VGS tr 0V ton Switching time Fall time tf Turn-OFF time RL = 133 Ω 50 Ω Turn-ON time Duty ≤ 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT VDD≒400 V VDD≒400 V, VGS = 10 V, ID = 5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 5 A ⎯ ⎯ ⎯ 15 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 5 A, VGS = 0 V, ⎯ 900 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 5.4 ⎯ μC Pulse drain reverse current (Note 1) IDRP Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] TOSHIBA K3700 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3700 ID – VDS ID – VDS 5 6 8 Common source Tc = 25°C 10 Pulse Test 5.25 5 (A) 10 5.5 5.25 ID 3 5 2 4.75 1 VGS = 4.5 V 0 0 4 8 12 16 Drain-source voltage VDS 20 3 5 2 4.75 1 VGS = 4 .5V 0 0 24 (V) 10 (V) VDS Drain-source voltage ID (A) Drain current 6 4 Tc = −55°C 100 25 2 4 6 Gate-source voltage 8 VGS 8 4 8 12 16 VGS 20 (V) RDS (ON) – ID Tc = −55°C 100 1 1 1.5 Gate-source voltage 25 0.1 0.1 3 4 (V) Drain-source ON resistance RDS (ON) (Ω) Common source VDS = 10 V Pulse Test ID = 5 A 12 0 0 10 Common source Tc = 25°C Pulse Test 14 ⎪Yfs⎪ – ID 10 (V) VDS – VGS 8 0 0 30 VDS 20 Common source VDS = 10 V Pulse Test 2 20 Drain-source voltage ID – VGS 10 Forward transfer admittance ⎪Yfs⎪ (S) 8 6 4 Drain current ID Drain current Common source Tc = 25°C Pulse Test (A) 4 5.5 6 10 Drain current ID (A) 10 5 VGS = 10 V､15V 3 Common source Tc = 25°C VGS = 10 V Pulse Test 1 0.01 0.1 1 10 Drain current ID (A) 3 2009-09-29 2SK3700 RDS (ON) – Tc IDR – VDS 10 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) PULSE TEST 8 6 ID = 5A 3 4 1.5 VGS = 10 V 2 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc COMMON SOURCE Tc = 25°C 5 PULSE TEST 3 1 0.5 0.3 10 1 3 0.1 0 160 (°C) VGS = 0, −1 V −0.4 −0.8 DRAIN-SOURCE VOLTAGE CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) Ciss (pF) (V) 1000 Coss 100 COMMON SOURCE VGS = 0 V Crss Tc = 25°C 1 3 5 10 DRAIN-SOURCE VOLTAGE 30 50 VDS 3 2 COMMON SOURCE VDS = 10 V 1 ID = 1 mA PULSE TEST 0 −80 100 (V) VDS (V) DRAIN-SOURCE VOLTAGE 150 100 50 40 80 120 CASE TEMPERTATURE 40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 200 0 0 CASE TEMPERATURE PD − Tc 0 −40 160 20 500 400 VDD = 100 V 300 200 VGS 200 8 COMMON SOURCE ID = 5 A 100 4 4 Tc = 25°C PULSE TEST 0 0 10 20 TOTAL GATE CHARGE Tc (°C) 12 400 0 200 16 VDS 30 Qg (V) 10 0.1 4 VGS C CAPACITANCE VDS 5 f = 1 MHz PD (W) −1.6 Vth – Tc 10000 DRAIN POWER DISSIPATION −1.2 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 10 40 (nC) 2009-09-29 2SK3700 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t SINGLE PULSE 0.01 T 0.01 Duty Duty = t/T = t/T RthR(ch-c) = 0.833°C/W = 1.25°C/W th (ch-c) 0.001 10μ 100μ 1ｍ 10ｍ PULSE WIDTH 100ｍ EAS – Tch SAFE OPERATING AREA 500 1 0.1 400 100 μs * ID max (CONTINUOUS) * AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 10 10 tw (s) 100 ID max (PULSED) * 1 1 ms * DC OPERATION Tc = 25°C ※ SINGLE NONREPETITIVE PULSE 300 200 100 Tc=25℃ CURVES LINEARLY 0.01 1 MUST WITH BE DERATED INCREASE IN 10 0 25 VDSS max TEMPERATURE. 100 ドレイン･ソース間電圧 1000 VDS 50 75 100 125 150 10000 CHANNEL TEMPERATURE (INITIAL) Tch (°C) (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 25.7mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK3700 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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