2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 1000 V Drain-gate voltage (RGS = 20 kΩ) VDGR 1000 V Gate-source voltage VGSS ±30 V A 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE 150 W JEDEC ― EAS 910 mJ JEITA ― Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC (Note 1) ID 8 Pulse (Note 1) IDP 24 Drain power dissipation (Tc = 25°C) PD Single pulse avalanche energy (Note 2) Drain current TOSHIBA 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 Ω, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature 3 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2010-01-29 2SK2613 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 800 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 1000 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 1.4 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 4 A 2.0 6.0 ⎯ S Input capacitance Ciss ⎯ 2000 ⎯ Reverse transfer capacitance Crss ⎯ 30 ⎯ Output capacitance Coss ⎯ 200 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ⎯ 30 ⎯ ⎯ 100 ⎯ ⎯ 65 ⎯ ⎯ 40 ⎯ ⎯ 25 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr 0V ton 4.7 Ω Turn-ON time Switching time Fall time tf Turn-OFF time ID = 4 A 10 V VGS Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT RL = 100 Ω Duty ≤ 1%, tw = 10 μs toff pF ns VDD ≈ 400 V VDD ≈ 400 V, VGS = 10 V, ID = 8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 8 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 24 A (Note 1) Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V ⎯ ⎯ −1.9 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, ⎯ 1600 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 24 ⎯ μC Marking TOSHIBA K2613 Part No. (or abbreviation code) Lot No. Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-01-29 2SK2613 ID – VDS ID – VDS 20 Common source Tc = 25°C Pulse test 15 10 5.75 8 Drain current ID (A) 6.0 16 Drain current ID (A) 10 5.5 6 5.25 4 5.0 2 Common source Tc = 25°C Pulse test 15 10 6.5 6.25 12 6.0 5.75 8 5.5 5.25 4 VGS = 4.75 V VGS = 5.0 V 0 0 4 8 12 Drain-source voltage 16 0 20 0 VDS (V) 20 100 VDS – VGS VDS (V) Common source VSD = 20 V Pulse test Drain-source voltage 12 8 80 VDS (V) 20 16 Drain current ID (A) 60 Drain-source voltage ID – VGS 20 40 25 4 100 Common source Tc = 25°C Pulse test 16 ID = 8 A 12 8 4 4 2 Tc = −55°C 0 0 2 4 6 Gate-source voltage 8 0 10 0 VGS (V) 4 8 12 Gate-source voltage 16 20 VGS (V) ⎪Yfs⎪ − ID 100 RDS (ON) − ID 10 Drain-source on-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Common source VSD = 20 V Pulse test 10 25 Tc = −55°C 100 1 0.1 0.1 1 10 5 3 Drain current ID (A) VGS = 10,15 1 0.5 0.3 0.1 0.1 100 Common source Tc = 25°C Pulse test 0.3 1 3 10 30 Drain current ID (A) 3 2010-01-29 2SK2613 RDS (ON) − Tc IDR − VDS 100 (A) Common source VGS = 10 V Pulse test 4 Drain reverse current IDR Drain-source on -esistance RDS (ON) (Ω) 5 3 ID = 8 A 2 4 2 1 10 1 10 0.1 3 1 0 −80 −40 0 40 80 Case temperature 0.01 160 0 Tc (°C) −0.4 −0.2 5 Vth (V) Ciss Gate threshold voltage 1000 Coss 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 Crss 1 10 100 Drain-source voltage −1.0 −1.2 VDS (V) Vth − Tc Capacitance – VDS (pF) −0.8 −0.6 Drain-source voltage 10000 Capacitance C VGS = 0, −1 V 1000 VDS (V) Common source VDS = 10 V ID = 1 mA Pulse test 4 3 2 1 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) PD − Tc Dynamic input/output characteristics 120 80 40 0 0 40 80 Case temperature 120 160 400 VDS 16 12 200 200 8 400 VGS 100 0 0 200 VDD = 100 V 300 20 4 20 40 60 80 VGS (V) 160 Common source ID = 8 A Tc = 25°C Pulse test Gate-source voltage VDS (V) 500 Drain-source voltage Drain power dissipation PD (W) 200 0 100 Total gate charge Qg (nC) Tc (°C) 4 2010-01-29 2SK2613 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 Single pulse t T Duty = t/T Rth (ch-c) = 0.833°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (s) Safe operating area EAS – Tch 100 1000 100 μs * 10 ID max (continuous) Drain current ID (A) Avalanche energy EAS (mJ) 50 30 ID max (pulsed) * 1 ms * 5 3 DC Operation Tc = 25°C 1 0.5 0.3 0.1 * Single nonrepetitive pulse 0.05 Tc = 25°C 0.03 Curves must be derated linearly 0.01 1 10 3 10 30 100 Drain-source voltage 300 600 400 200 0 25 VDSS max with increase in temperature. 800 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 3000 10000 VDS (V) 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 26.3 mH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-01-29 2SK2613 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. 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No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-01-29