2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 400 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 400 V Drain-gate voltage (RGS = 20 kΩ) VDGR 400 V Gate-source voltage VGSS ±30 V (Note 1) ID 10 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAS 360 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C DC Drain current A JEDEC ― JEITA ― TOSHIBA 2-9F1C Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4 Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.56 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 Ω, IAR = 10 A 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-04-13 2SK3499 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 400 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 400 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5.0 A ⎯ 0.4 0.55 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5.0 A 4.0 8.0 ⎯ S Input capacitance Ciss ⎯ 1340 ⎯ Reverse transfer capacitance Crss ⎯ 160 ⎯ Output capacitance Coss ⎯ 490 ⎯ ⎯ 22 ⎯ ⎯ 60 ⎯ ⎯ 32 ⎯ ⎯ 140 ⎯ ⎯ 34 ⎯ ⎯ 18 ⎯ ⎯ 16 ⎯ Test Condition Min Typ. Max Unit 10 A Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz ID = 5 A 10 V VGS tr 0V ton Switching time Fall time RL = 40 Ω 50 Ω Turn-on time VOUT tf Turn-off time Duty ≤ 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ≈ 200 V VDD ≈ 320 V, VGS = 10 V, ID = 10 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ IDRP ⎯ ⎯ ⎯ 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 330 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 3.2 ⎯ μC Pulse drain reverse current (Note 1) Marking K3499 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Part No. (or abbreviation code) Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-04-13 2SK3499 ID – VDS Common source 15 Tc = 25°C pulse test 5.6 8 Drain current ID (A) ID – VDS 20 10 10 5.4 6.0 8.0 6 5.0 4.8 4 4.6 Common source Tc = 25°C pulse test 6.0 5.75 5.5 12 5.25 8 5.0 4.75 4.4 2 8.0 15 16 5.2 Drain current ID (A) 10 4 4.5 4.2 0 VGS = 4.0 V VGS = 4.0 V 0 2 4 6 Drain-source voltage 8 0 10 0 10 VDS (V) 20 Drain-source voltage ID – VGS 20 VDS (V) 16 12 Drain-source voltage Drain current ID (A) 40 8 100 VDS (V) 25 Common source Tc = 25°C pulse test 8 6 ID = 10 A 4 5.0 2 2.5 Tc = −55°C 0 0 2 4 6 Gate-source voltage 50 VDS – VGS 10 Common source VDS = 20 V pulse test 4 30 8 0 10 0 4 VGS (V) 8 12 Gate-source voltage 16 20 VGS (V) RDS (ON) − ID ⎪Yfs⎪ − ID (S) Common source Forward transfer admittance ⎪Yfs⎪ 30 Pulse test 5 VDS = 20 V 100 5 3 1 0.5 0.3 0.5 1 3 5 10 (Ω) 25 RDS (ON) Drain-source on resistance Tc = −55°C 10 Common source 3 Tc = 25°C Pulse test 1 15 0.3 0.1 0.5 30 Drain current ID (A) VGS = 10 V 0.5 1 3 5 10 3 30 50 Drain current ID (A) 3 2010-04-13 2SK3499 IDR − VDS 100 (A) Common source VGS = 10 V pulse test 2.0 Drain reverse current IDR 1.5 ID = 10 A 1.0 5 2.5 0.5 Common source Tc = 25°C 30 pulse test 10 3 10 1 5 3 0.3 1 −40 0 40 80 Case temperature 0.1 160 −0.2 0 Tc (°C) −0.4 VGS = 0, −1 V −0.6 −0.8 Drain-source voltage 5 Vth (V) 500 Gate threshold voltage Capacitance C (pF) Ciss 1000 300 Coss 100 50 Common source VGS = 0 V f = 1 MHz Tc = 25°C 0.3 0.5 Crss 1 3 5 Drain-source voltage 10 30 50 4 3 2 1 0 −80 100 60 12 40 8 20 4 160 VDS (V) 16 Case temperature 80 500 Drain-source voltage Drain power dissipation PD (W) 80 120 40 120 160 Dynamic input/output characteristics 20 80 0 Case temperature Tc (°C) PD − Tc 40 −40 VDS (V) 100 0 0 VDS (V) Common source VDS = 10 V ID = 1 mA pulse test 3000 10 0.1 −1.2 Vth − Tc Capacitance – VDS 5000 30 −1.0 400 VDD = 80 V 20 16 VDS 300 12 160 320 200 100 0 0 0 200 Common source ID = 10 A Tc = 25°C pulse test 8 VGS 20 4 40 60 80 VGS (V) 0 −80 Gate-source voltage Drain-source on-resistance RDS (ON) (Ω) RDS (ON) − Tc 2.5 0 100 Total gate charge Qg (nC) Tc (°C) 4 2010-04-13 2SK3499 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.1 0.2 0.1 0.05 0.02 PDM Single Pulse 0.03 t T 0.01 0.01 Duty = t/T Rth (ch-c) = 1.56°C/W 0.003 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 10 (s) Safe operating area EAS – Tch 100 500 Avalanche energy EAS (mJ) 50 ID max (pulsed) * 30 100 μs * Drain current ID (A) 10 ID max (continuous) 1 ms * 3 1 DC operation Tc = 25°C 0.5 400 300 200 100 0.3 0 25 50 0.1 0.05 *: Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 1 10 Drain-source voltage 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 100 1000 15 V VDS (V) BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 5.85 mH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-04-13 2SK3499 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-04-13