GT40QR21 Discrete IGBTs Silicon N-Channel IGBT GT40QR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2011-06-06 Rev.1.0 GT40QR21 , unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±25 IC 40 Collector current (DC) (Tc = 25) Collector current (DC) (Tc = 100) Collector current (1 ms) ICP 80 Diode forward current (DC) IF 20 Diode forward current (100 µs) Collector power dissipation A 35 (Tc = 25) Junction temperature 80 PC 230 W Tj 175 Storage temperature Tstg -55 to 175 Mounting torque TOR 0.8 Note: (Note 1) IFP Nm Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: Ensure that the junction temperature does not exceed 175. 5. Thermal Characteristics Characteristics Junction-to-case thermal resistance 2 Symbol Max Unit Rth(j-c) 0.65 /W 2011-06-06 Rev.1.0 GT40QR21 6. Electrical Characteristics , unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Gate leakage current Collector cut-off current Symbol Test Condition IGES VGE = ±25 V, VCE = 0 V ICES VCE = 1200 V, VGE = 0 V Min Typ. Max Unit ±100 nA 1 mA Gate-emitter cut-off voltage VGE(OFF) IC = 40 mA, VCE = 5 V 4.5 7.5 V Collector-emitter saturation voltage VCE(sat)(1) IC = 20 A, VGE = 15 V 1.50 Collector-emitter saturation voltage VCE(sat)(2) IC = 20 A, VGE = 15 V, Tj = 125 1.75 Collector-emitter saturation voltage VCE(sat)(3) IC = 20 A, VGE = 15 V, Tj = 175 1.89 Collector-emitter saturation voltage VCE(sat)(4) IC = 40 A, VGE = 15 V 1.90 2.70 Collector-emitter saturation voltage VCE(sat)(5) IC = 40 A, VGE = 15 V, Tj = 125 2.29 Collector-emitter saturation voltage VCE(sat)(6) IC = 40 A, VGE = 15 V, Tj = 175 2.50 2.6 Diode forward voltage VF IF = 15 A, VGE = 0 V 3 2011-06-06 Rev.1.0 GT40QR21 , unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Input capacitance Symbol Cies Switching time (rise time) tr Switching time (turn-on time) ton Switching time (fall time) Switching time (turn-off time) tf Test Condition Min Typ. Max Unit VCE = 10 V, VGE = 0 V, f = 1 MHz 1500 pF Resistive load VCC = 600 V, IC = 40 A, VGG = ±15 V, RG = 39 Ω See Fig. 6.2.1, 6.2.2. 0.12 µs 0.18 0.20 0.40 0.40 toff Switching loss (turn-off switching loss) Eoff(1) Inductive Load VCC = 280 V, IC = 40 A, L = 30 µH,C = 0.33 µF, VGG = 20 V, RG = 10 Ω See Fig. 6.2.3, 6.2.4. 0.16 Switching loss (turn-off switching loss) Eoff(2) Inductive Load VCC = 280 V, IC = 40 A, L = 30 µH,C = 0.33 µH, VGG = 20 V, RG = 10 Ω Tc = 125 See Fig. 6.2.3, 6.2.4. 0.29 IF = 15 A, VGE = 0 V, di/dt = -20 A/µs 0.60 Reverse recovery time trr mJ µs Fig. 6.2.1 Test Circuit of Switching Time Fig. 6.2.2 Timing Chart of Switching Time Fig. 6.2.3 Test Circuit of Switching Loss Fig. 6.2.4 Timing Chart of Switching Loss 4 2011-06-06 Rev.1.0 GT40QR21 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 5 2011-06-06 Rev.1.0 GT40QR21 8. Characteristics Curves (Note) Fig. 8.1 IC - VCE Fig. 8.2 IC - VCE Fig. 8.3 IC - VCE Fig. 8.4 IC - VCE Fig. 8.5 VCE(sat) - Tc Fig. 8.6 IC - VGE 6 2011-06-06 Rev.1.0 GT40QR21 Fig. 8.8 C - VCE Fig. 8.9 Switching Time - IC Fig. 8.10 Switching Time - RG Fig. 8.11 rth(j-c) - tw (Guaranteed Maximum) Fig. 8.12 Safe Operating Area (Guaranteed Maximum) Fig. 8.13 Reverse Bias SOA (Guaranteed Maximum) 7 2011-06-06 Rev.1.0 GT40QR21 Fig. 8.14 IF - VF Note: The above characteristics curves are presented for reference only and not guaranteed by production test. 8 2011-06-06 Rev.1.0 GT40QR21 Package Dimensions Unit: mm Weight: 4.6 g (typ.) Package Name(s) TOSHIBA: 2-16C1S Nickname: TO-3P(N) 9 2011-06-06 Rev.1.0 GT40QR21 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2011-06-06 Rev.1.0