2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.7 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 1 A Pulse (Note 1) IDP 2 A Drain power dissipation (Tc = 25°C) PD 1.3 W Single pulse avalanche energy (Note 2) EAS 122 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 0.13 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C Drain current JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch-a) 96.1 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2010-04-13 2SK3374 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 3.7 4.6 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.5 A 0.3 0.7 ⎯ S Input capacitance Ciss ⎯ 180 ⎯ Reverse transfer capacitance Crss ⎯ 2 ⎯ Output capacitance Coss ⎯ 20 ⎯ ⎯ 7 ⎯ ⎯ 15 ⎯ Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 0.5 A 10 V VGS 0V ton Switching time Fall time tf Turn-off time Duty ≤ 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd pF VOUT RL = 400 Ω 10 Ω Drain-source breakdown voltage ns ⎯ 30 ⎯ ⎯ 70 ⎯ ⎯ 5 ⎯ ⎯ 3 ⎯ ⎯ 2 ⎯ VDD ≈ 200 V VDD ≈ 360 V, VGS = 10 V, ID = 1 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 1 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 2 A (Note 1) Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, ⎯ 350 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC Reverse recovery charge Marking K3374 Note 4: A line under a Lot No. identifies the indication of product Labels. Part No. (or abbreviation code) Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-04-13 2SK3374 ID − VDS Common source Ta = 25°C pulse test 10 5.75 5.5 8.0 5.25 0.4 5.0 4.75 0.2 2 4 6 Drain-source voltage 8 6.0 5.75 1.2 5.5 0.8 5.25 5.0 0.4 VGS = 4.5 V 0 VGS = 4.5 V 0 10 0 10 VDS (V) 20 VDS (V) 1.2 Drain-source voltage Drain current ID (A) 1.6 0.8 100 0 Ta = −55°C 25 0 2 4 6 Gate-source voltage (S) Forward transfer admittance ⎪Yfs⎪ 3 VDS = 20 V pulse test 1 8 12 8 ID = 1 A 4 0.25 0 4 VGS (V) 8 Ta = −55°C Drain-source on resistance RDS (ON) (Ω) 25 0.1 0.05 0.03 0.1 0.3 16 20 VGS (V) RDS (ON) − ID 50 100 0.03 0.5 12 Gate-source voltage 0.3 0.01 0.01 VDS (V) 16 0 10 Common source 0.5 50 Common source Ta = 25°C pulse test ⎪Yfs⎪ − ID 5 40 VDS − VGS 20 Common source VDS = 20 V pulse test 0.4 30 Drain-source voltage ID − VGS 2.0 Common source Ta = 25°C pulse test 6.25 1.6 0.6 0 8.0 10 6.0 0.8 Drain current ID (A) ID − VDS 2.0 Drain current ID (A) 1.0 1 3 Common source 30 Ta = 25°C Pulse test 10 5 3 1 0.1 10 Drain current ID (A) VGS = 10, 15 V 0.3 0.5 1 3 5 10 Drain current ID (A) 3 2010-04-13 2SK3374 IDR − VDS 10 Common source (A) VGS = 10 V pulse test 12 Drain reverse current IDR 0.5 ID = 1A 8 0.25 4 Common source Ta = 25°C 3 pulse test 1 0.3 0.1 10 3 0.03 1 −40 0 40 Ambient temperature 80 0.01 160 0 Ta (°C) −0.2 −0.4 VGS = 0, −1 V −0.6 −0.8 Drain-source voltage VDS (V) 5 Common source VDS = 10 V ID = 1 mA pulse test 300 Vth (V) 100 50 Gate threshold voltage Capacitance C (pF) Ciss 30 Coss 10 5 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 0.1 0.3 0.5 4 3 2 1 Crss 1 3 5 Drain-source voltage 10 30 50 0 −80 100 VDS (V) PD − Ta 0 40 80 VDS (V) 1.6 1.2 0.8 0.4 40 80 120 Ambient temperature 120 160 Dynamic input/output characteristics 500 Drain-source voltage Drain power dissipation PD (W) −40 Ambient temperature Ta (°C) 2.0 0 0 −1.2 Vth − Ta Capacitance − VDS 500 3 −1.0 160 400 180 VDS 20 16 90 300 12 VDS = 360 V 200 8 VGS 100 0 0 200 Common source ID = 1 A Ta = 25°C pulse test 2 4 4 6 8 VGS (V) 0 −80 Gate-source voltage Drain-source on resistance RDS (ON) (Ω) RDS (ON) − Ta 16 0 10 Total gate charge Qg (nC) Ta (°C) 4 2010-04-13 2SK3374 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 0.5 Duty = 0.5 0.3 0.2 0.1 0.05 0.03 0.01 0.1 0.05 0.02 Single Pulse 0.01 PDM t 0.003 T Duty = t/T Rth (ch-a) = 96.1°C/W 0.001 0.0005 10 μ 100 μ 1m 10 m 1 100 m Pulse width tw 10 (s) EAS − Tch Safe operating area 10 150 Drain current ID (A) Avalanche energy EAS (mJ) 100 μs * ID max (pulsed) * 1 100 ID max (continuous) 1 ms * 0.1 DC operation Ta = 25°C 0.01 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 Drain-source voltage 100 90 60 30 0 25 VDSS max 10 120 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 VDS (V) 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 203 mH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-04-13 2SK3374 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-04-13