TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Note 1) ID 2 Pulse (t = 1 ms) (Note 1) IDP 8 Drain power dissipation (Tc = 25°C) PD 60 W Single pulse avalanche energy (Note 2) EAS 101 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 6 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C DC A 1 2 3 2.3 ± 0.2 Rating 0.1 ± 0.1 Symbol 1.1 ± 0.2 0.6 MAX. 1.05 MAX. 0.6 ± 0.15 Drain current 0.6 MAX. 9.5 ± 0.3 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Characteristics 1.5 ± 0.2 6.5 ± 0.2 • • • • 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J1B Weight : 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.08 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 44.1 mH, RG = 25Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 2010-02-25 TK2P60D Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1 A ⎯ 3.3 4.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1 A 0.3 1.0 ― S Input capacitance Ciss ― 280 ― Reverse transfer capacitance Crss ― 1.5 ― Output capacitance Coss ― 30 ― Vout ⎯ 15 ⎯ RL = 200 Ω ⎯ 35 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 1 A 10 V VGS 0V tr tf Turn-off time Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd pF ns ⎯ 7 ⎯ ⎯ 55 ⎯ ⎯ 7 ⎯ ⎯ 4 ⎯ ⎯ 3 ⎯ VDD ≈ 200 V VDD ≈ 400 V, VGS = 10 V, ID = 2 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 2 A (Note 1) IDRP ⎯ ⎯ ⎯ 8 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V ⎯ ⎯ -1.7 V Reverse recovery time trr IDR = 2 A, VGS = 0 V, ⎯ 550 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 2.2 ⎯ μC Marking K2P60D Part No. (or abbreviation code) Lot No. Note 4 Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 2010-02-25 TK2P60D ID – VDS 8 7.5 10 7.3 Common source 10 Tc = 25°C Pulse test 8.5 9 3.2 ID 7 1.2 Drain current Drain current ID (A) 1.6 Common source Tc = 25°C Pulse test ID – VDS 4 8 (A) 2 6.5 0.8 6 0.4 2.4 7.5 1.6 7 6.5 VGS = 6 V 0.8 VGS = 5.5 V 0 0 2 4 6 Drain−source voltage 8 VDS 0 0 10 (V) 10 20 VDS (V) Drain−source voltage ID Drain current 2.4 1.6 100 Tc = −55°C 25 0.8 2 4 6 Gate−source voltage 8 VGS 16 12 1 4 0.5 0 0 10 ID = 2 A 8 (V) 4 8 Drain−source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Tc = −55°C 1 25 1 Drain current VGS 20 (V) (A) Common source Tc = 25°C Pulse test 10 VGS = 10 V 1 0.1 10 ID 16 RDS (ON) − ID Common source VDS = 10 V Pulse test 0.1 0.1 12 Gate−source voltage 100 100 (V) Common source Tc = 25°C Pulse test ⎪Yfs⎪ − ID 10 50 VDS – VGS Common source VDS = 20 V Pulse test 0 0 VDS 20 (A) 3.2 40 Drain−source voltage ID – VGS 4 30 Drain current 3 10 1 ID (A) 2010-02-25 TK2P60D IDR − VDS RDS (ON) – Tc 10 (A) Common source VGS = 10 V Pulse test Common source Tc = 25°C Pulse test IDR 12 Drain reverse current 2 8 1 ID = 0.5 A 4 1 10 5 1 3 −40 0 40 Case temperature 80 Tc 120 0.1 0 160 -0.3 (°C) Vth (V) Gate threshold voltage (V) Coss 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C Crss 1 10 80 120 3 2 1 Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 100 VDS 4 (V) −40 0 40 Case temperature Tc 500 VDS (V) (W) 80 Drain−source voltage 60 40 20 80 Case temperature (°C) Dynamic input/output characteristics PD − Tc 40 160 120 Tc 400 VDS 200V 12 300 VDD = 100V 400V 8 200 VGS 100 0 0 160 20 Common source ID = 2 A Tc = 25°C Pulse test 16 4 2 4 Total gate charge (°C) 4 6 Qg (V) Capacitance C (pF) 100 Drain−source voltage PD VDS -1.5 5 Ciss Drain power dissipation -1.2 Vth − Tc C – VDS 0 0 -0.9 Drain−source voltage 1000 1 0.1 VGS = 0 V -0.6 VGS 0 −80 8 Gate−source voltage Drain−source ON-resistance RDS (ON) (Ω) 16 0 10 (nC) 2010-02-25 TK2P60D Normalized transient thermal impedance rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 PDM 0.1 0.05 Single pulse t 0.02 T 0.01 0.01 10μ Duty = t/T Rth (ch-c) = 2.08 °C/W 100μ 1m 10m Pulse width 100m tw 1 (s) Safe operating area EAS – Tch 160 100 μs * ID max (Continuous) Avalanche energy Drain current EAS (mJ) 10 ID max (Pulse) * ID (A) 100 1 ms * 1 DC operation Tc = 25°C 0.1 Curves must be derated linearly with increase in temperature. 10 Drain−source voltage 120 80 40 0 25 * Single nonrepetitive 0.01 pulse Tc = 25°C 0.001 1 10 50 75 100 Channel temperature (initial) 125 150 Tch (°C) VDSS max 100 VDS 1000 (V) 15 V BVDSS IAR −15 V VDD WAVEFORM TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 44.1 mH 5 VDS Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-02-25 TK2P60D RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-02-25