TOSHIBA TK2P60D

TK2P60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D
Switching Regulator Applications
Unit: mm
5.5 ± 0.2
1.2 MAX.
Absolute Maximum Ratings (Ta = 25°C)
0.8 MAX.
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
2
Pulse (t = 1 ms)
(Note 1)
IDP
8
Drain power dissipation (Tc = 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
101
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
DC
A
1
2
3
2.3 ± 0.2
Rating
0.1 ± 0.1
Symbol
1.1 ± 0.2
0.6 MAX.
1.05 MAX.
0.6 ± 0.15
Drain current
0.6 MAX.
9.5 ± 0.3
5.2 ± 0.2
Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.)
Low leakage current: IDSS = 10 μA (VDS = 600 V)
Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Characteristics
1.5 ± 0.2
6.5 ± 0.2
•
•
•
•
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURSE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J1B
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.08
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 44.1 mH, RG = 25Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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TK2P60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
⎯
⎯
±1
μA
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.4
⎯
4.4
V
Gate threshold voltage
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1 A
⎯
3.3
4.3
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 1 A
0.3
1.0
―
S
Input capacitance
Ciss
―
280
―
Reverse transfer capacitance
Crss
―
1.5
―
Output capacitance
Coss
―
30
―
Vout
⎯
15
⎯
RL =
200 Ω
⎯
35
⎯
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
50 Ω
Switching time
Fall time
ID = 1 A
10 V
VGS
0V
tr
tf
Turn-off time
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
pF
ns
⎯
7
⎯
⎯
55
⎯
⎯
7
⎯
⎯
4
⎯
⎯
3
⎯
VDD ≈ 200 V
VDD ≈ 400 V, VGS = 10 V, ID = 2 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
⎯
⎯
⎯
2
A
(Note 1)
IDRP
⎯
⎯
⎯
8
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
⎯
⎯
-1.7
V
Reverse recovery time
trr
IDR = 2 A, VGS = 0 V,
⎯
550
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
2.2
⎯
μC
Marking
K2P60D
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
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TK2P60D
ID – VDS
8
7.5
10
7.3
Common source 10
Tc = 25°C
Pulse test
8.5
9
3.2
ID
7
1.2
Drain current
Drain current
ID
(A)
1.6
Common source
Tc = 25°C
Pulse test
ID – VDS
4
8
(A)
2
6.5
0.8
6
0.4
2.4
7.5
1.6
7
6.5
VGS = 6 V
0.8
VGS = 5.5 V
0
0
2
4
6
Drain−source voltage
8
VDS
0
0
10
(V)
10
20
VDS (V)
Drain−source voltage
ID
Drain current
2.4
1.6
100
Tc = −55°C
25
0.8
2
4
6
Gate−source voltage
8
VGS
16
12
1
4
0.5
0
0
10
ID = 2 A
8
(V)
4
8
Drain−source ON-resistance
RDS (ON) (Ω)
Forward transfer admittance
⎪Yfs⎪ (S)
Tc = −55°C
1
25
1
Drain current
VGS
20
(V)
(A)
Common source
Tc = 25°C
Pulse test
10
VGS = 10 V
1
0.1
10
ID
16
RDS (ON) − ID
Common source
VDS = 10 V
Pulse test
0.1
0.1
12
Gate−source voltage
100
100
(V)
Common source
Tc = 25°C
Pulse test
⎪Yfs⎪ − ID
10
50
VDS – VGS
Common source
VDS = 20 V
Pulse test
0
0
VDS
20
(A)
3.2
40
Drain−source voltage
ID – VGS
4
30
Drain current
3
10
1
ID
(A)
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TK2P60D
IDR − VDS
RDS (ON) – Tc
10
(A)
Common source
VGS = 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
IDR
12
Drain reverse current
2
8
1
ID = 0.5 A
4
1
10
5
1
3
−40
0
40
Case temperature
80
Tc
120
0.1
0
160
-0.3
(°C)
Vth (V)
Gate threshold voltage
(V)
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Crss
1
10
80
120
3
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
VDS
4
(V)
−40
0
40
Case temperature
Tc
500
VDS (V)
(W)
80
Drain−source voltage
60
40
20
80
Case temperature
(°C)
Dynamic input/output
characteristics
PD − Tc
40
160
120
Tc
400
VDS
200V
12
300
VDD = 100V
400V
8
200
VGS
100
0
0
160
20
Common source
ID = 2 A
Tc = 25°C
Pulse test
16
4
2
4
Total gate charge
(°C)
4
6
Qg
(V)
Capacitance
C
(pF)
100
Drain−source voltage
PD
VDS
-1.5
5
Ciss
Drain power dissipation
-1.2
Vth − Tc
C – VDS
0
0
-0.9
Drain−source voltage
1000
1
0.1
VGS = 0 V
-0.6
VGS
0
−80
8
Gate−source voltage
Drain−source ON-resistance
RDS (ON) (Ω)
16
0
10
(nC)
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TK2P60D
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
PDM
0.1 0.05
Single pulse
t
0.02
T
0.01
0.01
10μ
Duty = t/T
Rth (ch-c) = 2.08 °C/W
100μ
1m
10m
Pulse width
100m
tw
1
(s)
Safe operating area
EAS – Tch
160
100 μs *
ID max (Continuous)
Avalanche energy
Drain current
EAS (mJ)
10 ID max (Pulse) *
ID
(A)
100
1 ms *
1
DC operation
Tc = 25°C
0.1
Curves must be derated
linearly with increase in
temperature.
10
Drain−source voltage
120
80
40
0
25
* Single nonrepetitive
0.01
pulse Tc = 25°C
0.001
1
10
50
75
100
Channel temperature (initial)
125
150
Tch (°C)
VDSS max
100
VDS
1000
(V)
15 V
BVDSS
IAR
−15 V
VDD
WAVEFORM
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 44.1 mH
5
VDS
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
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TK2P60D
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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