TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 7.8 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 5.1 mΩ (typ.) • High forward transfer admittance: |Yfs| =38 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 Gate-source voltage VGSS ±20 DC JEDEC ― V JEITA ― V TOSHIBA (Note 1) ID 15 Pulsed (Note 1) IDP 60 PD 1.9 W PD 1.0 W EAS 146 mJ IAR 15 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPC8017-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8017 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPC8017-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 7.5 A ⎯ 7.3 9.5 VGS = 10 V, ID = 7.5 A ⎯ 5.1 6.6 VDS = 10 V, ID = 7.5 A 19 38 ⎯ ⎯ 1465 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 175 ⎯ ⎯ 610 ⎯ ⎯ 4 ⎯ ⎯ 11 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time toff 10 ⎯ Duty < = 1%, tw = 10 µs ⎯ 38 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 10 V, ID = 15 A ⎯ 25 ⎯ Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd Gate switch charge QSW VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 5 V, ID = 15 A VDD ∼ − 24 V, VGS = 10 V, ID = 15 A V mΩ S pF ns ⎯ tf Turn-off time ID = 7.5 A VOUT VGS 10 V 0V RL = 2Ω Rise time V ⎯ 14 ⎯ ⎯ 4.7 ⎯ ⎯ 5.7 ⎯ ⎯ 7.8 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 60 A ⎯ ⎯ −1.2 V VDSF IDR = 15 A, VGS = 0 V 3 2006-11-16 TPC8017-H ID – VDS ID – VDS Drain current ID (A) 16 10 6 4 3.1 3.2 Common source Ta = 25°C Pulse test 3 3.4 3.5 4.5 5 50 Drain current ID (A) 20 2.9 12 2.8 8 2.7 2.6 4 40 10 8 6 5 3.6 3.8 4 Common source Ta = 25°C Pulse test 3.4 4.5 3.2 30 3 20 2.8 10 VGS = 2.6V VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 0 1 (V) 0.4 0.8 1.2 1.6 Drain-source voltage VDS (V) ID – VGS Drain current ID (A) 40 0.2 Common source VDS = 10 V Pulse test Drain-source voltage VDS (V) 50 30 20 100 Ta = −55°C 10 25 0 0 1 2 4 3 Gate-source voltage 5 Common source Ta = 25°C Pulse test 0.16 0.12 ID = 15 A 0.08 7.5 0.04 3.8 0 0 6 VGS (V) 2 4 Gate-source voltage 10 VGS (V) 100 100 Ta = −55°C 25 100 10 1 0.1 0.1 8 RDS (ON) – ID 1000 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) ⎪Yfs⎪ – ID 6 Common source VDS = 10 V Pulse test 1 10 Common source Ta = 25°C Pulse test 10 VGS = 10 V 1 0.1 100 Drain current ID (A) 4.5 1 10 100 Drain current ID (A) 4 2006-11-16 TPC8017-H RDS (ON) – Ta IDR – VDS 20 1000 Common source ID = 15A 12 3.8A,7.5A 8 VGS = 4.5 V ID = 3.8A,7.5A,15A 4 VGS = 10 V 0 −80 Ta = 25°C (A) Drain reverse current IDR −40 0 40 80 Ambient temperature 120 Ta Pulse test 100 10 3 10 1 1 VGS = 0 V 0.1 0 160 4.5 (°C) −0.4 −0.2 Capacitance – VDS (V) Gate threshold voltage Vth (pF) Capacitance C 1000 Coss Common source ソース接地 V =0V VGS GS = 0 V 10 0.1 Crss 1 10 2 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 100 Drain-source voltage VDS (V) −40 glass-epoxy board(b) (Note 2b) ｔ＝10s 1.2 (2) 0.8 0.4 80 Ambient temperature Ta 160 (°C) 120 Ta 20 Common source (2)Device mounted on a 40 120 50 (Note 2a) Drain-source voltage VDS (V) glass-epoxy board(a) (1) 80 Dynamic input/output characteristics (1)Device mounted on a 1.6 40 ID = 15 A 40 16 Ta = 25°C VDD = 6 V Pulse test 30 12 12 VDS 24 20 8 16 Total gate charge (°C) 5 8 VGS 10 0 0 160 (V) 2 0 Ambient temperature PD – Ta (W) (V) Vth – Ta ff = =1 1 MHz MHz Ta Ta = = 25°C 25°C Drain power dissipation PD −1.0 2.5 Ciss 0 0 −0.8 Drain-source voltage VDS 10000 100 −0.6 4 24 Qg 32 Gate-source voltage VGS Drain-source ON-resistance RDS (ON) (mΩ) Pulse test 16 Common source 0 40 (nC) 2006-11-16 TPC8017-H rth (°C/W) rth − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note (2) 2a) (2) Device mounted on a glass-epoxy board (b) (Note Transient thermal impedance 100 2b) (1) 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area Drain current ID (A) 1000 100 ID max (Pulse) * t=1ms * 10 10ms * ※Single - pulse 1 Ta=25℃ Curves must be derated linearly with increase in 0.1 0.1 VDSS max temperature. 1 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPC8017-H 7 2006-11-16