TOSHIBA TPC8017-H_06

TPC8017-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8017-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Unit: mm
Portable-Equipment Applications
•
Small footprint due to small and thin package
•
High-speed switching
•
Small gate charge: QSW = 7.8 nC (typ.)
•
Low drain-source ON-resistance: RDS (ON) = 5.1 mΩ (typ.)
•
High forward transfer admittance: |Yfs| =38 S (typ.)
•
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
Gate-source voltage
VGSS
±20
DC
JEDEC
―
V
JEITA
―
V
TOSHIBA
(Note 1)
ID
15
Pulsed (Note 1)
IDP
60
PD
1.9
W
PD
1.0
W
EAS
146
mJ
IAR
15
A
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
A
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8017-H
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
65.8
°C/W
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8017
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPC8017-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
VDS = 10 V, ID = 1 mA
1.1
⎯
2.3
VGS = 4.5 V, ID = 7.5 A
⎯
7.3
9.5
VGS = 10 V, ID = 7.5 A
⎯
5.1
6.6
VDS = 10 V, ID = 7.5 A
19
38
⎯
⎯
1465
⎯
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
175
⎯
⎯
610
⎯
⎯
4
⎯
⎯
11
⎯
Drain-source breakdown voltage
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
Turn-on time
ton
4.7 Ω
Switching time
Fall time
toff
10
⎯
Duty <
= 1%, tw = 10 µs
⎯
38
⎯
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ∼
− 24 V, VGS = 10 V, ID = 15 A
⎯
25
⎯
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Gate switch charge
QSW
VDD ∼
− 15 V
VDD ∼
− 24 V, VGS = 5 V, ID = 15 A
VDD ∼
− 24 V, VGS = 10 V, ID = 15 A
V
mΩ
S
pF
ns
⎯
tf
Turn-off time
ID = 7.5 A
VOUT
VGS 10 V
0V
RL = 2Ω
Rise time
V
⎯
14
⎯
⎯
4.7
⎯
⎯
5.7
⎯
⎯
7.8
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
60
A
⎯
⎯
−1.2
V
VDSF
IDR = 15 A, VGS = 0 V
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TPC8017-H
ID – VDS
ID – VDS
Drain current ID (A)
16
10
6
4
3.1
3.2
Common source
Ta = 25°C Pulse test
3
3.4
3.5
4.5
5
50
Drain current ID (A)
20
2.9
12
2.8
8
2.7
2.6
4
40
10
8
6
5
3.6
3.8
4
Common source
Ta = 25°C Pulse test
3.4
4.5
3.2
30
3
20
2.8
10
VGS = 2.6V
VGS = 2.5V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage VDS
0
0
1
(V)
0.4
0.8
1.2
1.6
Drain-source voltage VDS
(V)
ID – VGS
Drain current ID (A)
40
0.2
Common source
VDS = 10 V
Pulse test
Drain-source voltage VDS (V)
50
30
20
100
Ta = −55°C
10
25
0
0
1
2
4
3
Gate-source voltage
5
Common source
Ta = 25°C
Pulse test
0.16
0.12
ID = 15 A
0.08
7.5
0.04
3.8
0
0
6
VGS (V)
2
4
Gate-source voltage
10
VGS (V)
100
100
Ta = −55°C
25
100
10
1
0.1
0.1
8
RDS (ON) – ID
1000
Drain-source ON-resistance
RDS (ON) (mΩ)
Forward transfer admittance |Yfs|
(S)
⎪Yfs⎪ – ID
6
Common source
VDS = 10 V
Pulse test
1
10
Common source
Ta = 25°C
Pulse test
10
VGS = 10 V
1
0.1
100
Drain current ID (A)
4.5
1
10
100
Drain current ID (A)
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TPC8017-H
RDS (ON) – Ta
IDR – VDS
20
1000
Common source
ID = 15A
12
3.8A,7.5A
8
VGS = 4.5 V
ID = 3.8A,7.5A,15A
4
VGS = 10 V
0
−80
Ta = 25°C
(A)
Drain reverse current IDR
−40
0
40
80
Ambient temperature
120
Ta
Pulse test
100
10
3
10
1
1
VGS = 0 V
0.1
0
160
4.5
(°C)
−0.4
−0.2
Capacitance – VDS
(V)
Gate threshold voltage Vth
(pF)
Capacitance C
1000
Coss
Common
source
ソース接地
V
=0V
VGS
GS = 0 V
10
0.1
Crss
1
10
2
1.5
1
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
Drain-source voltage VDS
(V)
−40
glass-epoxy board(b)
(Note 2b)
t=10s
1.2
(2)
0.8
0.4
80
Ambient temperature
Ta
160
(°C)
120
Ta
20
Common source
(2)Device mounted on a
40
120
50
(Note 2a)
Drain-source voltage VDS (V)
glass-epoxy board(a)
(1)
80
Dynamic input/output
characteristics
(1)Device mounted on a
1.6
40
ID = 15 A
40
16
Ta = 25°C
VDD = 6 V
Pulse test
30
12
12
VDS
24
20
8
16
Total gate charge
(°C)
5
8
VGS
10
0
0
160
(V)
2
0
Ambient temperature
PD – Ta
(W)
(V)
Vth – Ta
ff =
=1
1 MHz
MHz
Ta
Ta =
= 25°C
25°C
Drain power dissipation PD
−1.0
2.5
Ciss
0
0
−0.8
Drain-source voltage VDS
10000
100
−0.6
4
24
Qg
32
Gate-source voltage VGS
Drain-source ON-resistance
RDS (ON) (mΩ)
Pulse test
16
Common source
0
40
(nC)
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TPC8017-H
rth (°C/W)
rth − tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note
(2)
2a)
(2) Device mounted on a glass-epoxy board (b)
(Note
Transient thermal impedance
100
2b)
(1)
10
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
Safe operating area
Drain current ID (A)
1000
100
ID max (Pulse) *
t=1ms *
10
10ms *
※Single - pulse
1
Ta=25℃
Curves must be derated
linearly with increase in
0.1
0.1
VDSS max
temperature.
1
10
Drain-source voltage VDS
100
(V)
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TPC8017-H
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