TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII) TPCA8006-H Switching Regulator Applications Motor Drive Applications 0.5±0.1 Unit: mm • High speed switching • Low drain-source ON-resistance High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Symbol 1 Drain-source voltage VDSS Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage 4 Unit 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE 100 V VDGR 100 V JEDEC ― VGSS ±20 V JEITA ― (Note 1) ID 18 IDP 36 A TOSHIBA Pulsed (Note 1) PD 45 W PD 2.8 W DC Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) 1.6 W EAS 224 mJ IAR 18 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration PD (Note 2b) A 3.5±0.2 4.25±0.2 Rating 0.595 0.05 S S Absolute Maximum Ratings (Ta = 25°C) Characteristic 5.0±0.2 0.6±0.1 • • Drain current 4 0.166±0.05 0.95±0.05 • 0.15±0.05 1 : RDS (ON) = 41 mΩ (typ.) (VG=10V, ID=9A) 0.05 M A 5 1.1±0.2 Small footprint due to a small and thin package 6.0±0.3 • 1.27 8 5.0±0.2 DC／DC Converter Applications 0.4±0.1 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 TPCA8006-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8006-H Type Lot No. * Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 0.8 mH， RG = 25 Ω， IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-20 TPCA8006-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 100 µA Drain-source breakdown voltage Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 9 A ⎯ 41 67 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 7.5 15 ⎯ S ⎯ 780 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 17 ⎯ ⎯ 390 ⎯ ⎯ 3 ⎯ ⎯ 13 ⎯ ⎯ 2 ⎯ ⎯ 13 ⎯ ⎯ 12 ⎯ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Turn-on time tr ton Turn-off time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff ID = 9 A VGS 10 V 0V VOUT RL = 5.6Ω Rise time VDD ∼ − 50 V Duty < = 1%, tw = 10 µs Qg pF ns Gate-source charge 1 Qgs1 ⎯ 5.6 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 4.0 ⎯ Gate switch charge QSW ⎯ 6.9 ⎯ Test Condition Min Typ. Max ⎯ ⎯ ⎯ 36 A ⎯ ⎯ −1.7 V VDD ∼ − 80 V, VGS = 10 V, ID = 18 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol IDRP VDSF IDR = 18 A, VGS = 0 V 3 Unit 2006-11-20 TPCA8006-H ID – VDS ID – VDS 8 Ta = 25°C Pulse test 16 Drain current ID (A) 10 Common source 50 10 7.5 9 Common source 9 Ta = 25°C Pulse test 8.5 8.5 Drain current ID (A) 20 7 12 8 6.5 4 VGS = 6V 40 8 30 7.5 20 7 10 6.5 VGS = 6V 0 0 0.4 0.8 1.2 1.6 Drain-source voltage VDS 0 2 0 (V) 2 Drain-source voltage VDS (V) Drain current ID (A) 24 16 100 8 25 Ta = −55°C 0 0 2 4 6 8 1.2 ID = 18 A 0.8 9 0.4 4.5 0 VGS (V) 4 8 ⎪Yfs⎪ – ID VDS = 20 V Pulse test Ta = −55°C 10 125 25 1 16 20 VGS (V) RDS (ON) − ID 1 Common source 0.1 0.1 12 Gate-source voltage 100 1 (V) Common source Ta = 25°C Pulse test 1.6 0 10 Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance |Yfs| (S) Gate-source voltage 10 VDS – VGS 2 Common source VDS = 20 V Pulse test 32 8 Drain-source voltage VDS ID – VGS 40 6 4 10 100 0.1 VGS = 10 V 0.01 0.1 Drain current ID (A) Common source Ta = 25°C Pulse test 1 10 100 Drain current ID (A) 4 2006-11-20 TPCA8006-H RDS (ON) − Ta IDR – VDS 100 Common source Pulse test Common source 10 Ta = 25°C 9 0.08 4.5 0.06 0.04 −40 0 80 40 Ambient temperature 120 10 VGS = 0 V 1 1 Ta 0.1 160 0 (°C) −0.2 −0.4 Capacitance – VDS −0.8 −1.0 −1.2 (V) Vth – Ta 6 Gate threshold voltage Vth (V) Ciss 1000 Coss 100 10 −0.6 Drain-source voltage VDS 10000 (pF) 3 0.02 0 −80 Capacitance C 5 Pulse test ID = 18 A Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (Ω) 0.1 Common source Crss VGS = 0 V f = 1 MHz Ta = 25°C 1 0.1 1 10 5 4 3 2 VDS = 10 V 1 Drain-source voltage VDS (V) ID = 1 mA Pulse test 0 −80 100 Common source −40 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics VDS VDD = 80 V 60 40 16 12 8 VGS 20 0 0 20 4 4 8 Total gate charge 12 Qg 16 VGS (V) 80 Common source ID = 18 A Ta = 25°C Pulse test Gate-source voltage Drain-source voltage VDS (V) 100 0 20 (nC) 5 2006-11-20 TPCA8006-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note2a) (2) Device mounted on a glass-epoxy board (b) (2) (Note2b) (3) Tc = 25°C 100 (1) 10 (3) 1 Single - pulse 0.1 0.001 0.1 0.01 1 Pulse width 10 100 1000 tw (s) PD – Ta PD – Tc 3.0 50 (W) 2.5 glass-epoxy board (a) (Note 2a) (2) Device mounted on a Drain power dissipation PD Drain power dissipation PD (W) (1) Device mounted on a (1) glass-epoxy board (b) (Note 2b) ｔ＝10s 2.0 (2) 1.5 1.0 0.5 0 0 40 80 120 Ambient temperature 40 30 20 10 0 160 Ta (°C) 0 40 80 Case temperature 120 Tc 160 (°C) Safe operating area 100 ID max (Pulse) * Drain current ID (A) t = 1ms * 10 ID max (Continuous) 10ms * DC Operation Tc = 25°C 1 *:Single - pulse 0.1 Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 VDSS max 10 100 1000 Drain-source voltage VDS (V) 6 2006-11-20 TPCA8006-H 7 2006-11-20