TPC8212-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 5.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| =14 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 30 V Drain−gate voltage (RGS = 20 kΩ) VDGR 30 V Gate−source voltage VGSS ±20 V JEDEC ― A JEITA ― Drain current DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.5 Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) TOSHIBA W PD (2) 1.1 PD (1) 0.75 PD 2) 0.45 Single-pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 2a, Note 3b, Note 5) EAR 0.10 mJ Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) 2-6J1E Weight: 0.085 g (typ.) Circuit Configuration W Channel temperature Tch 150 ℃ Storage temperature range Tstg −55～150 ℃ Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPC8212-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 125 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking TPC8212 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on the lower left of the marking indicates Pin 1. * Weekly code: (three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) 2 2006-11-16 TPC8212-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V — — 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 — — V V (BR) DSX ID = 10 mA, VGS = −20 V 15 — — Vth VDS = 10 V, ID = 1 mA 1.1 — 2.3 RDS (ON) VGS = 4.5 V, ID = 3 A — 21 27 RDS (ON) VGS = 10 V , ID = 3 A — 16 21 Forward transfer admittance |Yfs| VDS = 10 V , ID = 3 A 7 14 — Input capacitance Ciss — 840 — Reverse transfer capacitance Crss — 105 — Output capacitance Coss — 385 — tr — 5 — ton — 11 — Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Rise time Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz V mΩ S pF ns Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) (Note 7) tf — 7 — toff — 25 — VDD ∼ − 24 V, VGS = 10 V, ID = 6 A ⎯ 16 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 6 A ⎯ 9 ⎯ ⎯ 3.1 ⎯ ⎯ 4.1 ⎯ ⎯ 5.5 ⎯ Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 6 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP — — — 24 A — — −1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2006-11-16 TPC8212-H ID – VDS ID – VDS 10 8 Drain current ID (A) 4 10 4 3.4 6 8 Common source Ta = 25°C Pulse test 3.3 3 3.2 2 1 0 0 10 3.5 Drain current ID (A) 5 VGS = 3V 0.2 0.4 0.6 0.8 Drain-source voltage VDS Common source Ta =25°C Pulse test 6 3.6 8 3.5 6 4 3.3 2 0 0 1 4 (V) VGS = 3.1V 0.4 0.8 ID – VGS Common source Drain-source voltage VDS (V) Drain current ID (A) VDS = 10 V Pulse test 100 Ta = −55°C 4 25 2 1 2 4 3 Gate-source voltage VGS Ta = 25℃ Pulse test 0.2 ID = 6 A 0.1 3 1.5 0 0 5 (V) 4 6 8 VGS 10 (V) RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) (S) ⎪Yfs⎪ – ID Forward transfer admittance |Yfs| 2 Gate-source voltage 100 Ta = −55°C 25 100 1 Common source 4.5 10 VGS = 10 V Common source Ta = 25°C VDS = 10 V 0.1 0.1 (V) VDS – VGS 6 10 2 0.3 Common source 0 0 1.6 Drain-source voltage VDS 10 8 1.2 Pulse test 1 10 1 0.1 100 Drain current ID (A) Pulse test 1 10 100 Drain current ID (A) 4 2006-11-16 TPC8212-H RDS (ON) – Ta 100 50 Ta = 25°C Pulse test Pulse test 40 Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (mΩ) Common source IDR – VDS Common source ID = 1.5A,3A,6A 30 VGS = 4.5 V 20 ID = 1.5A,3A,6A VGS = 10 V 10 10 3 10 4.5 1 VGS = 0 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta 1 0 160 −0.2 (°C) −0.4 Capacitance – VDS −1.0 −1.2 (V) Vth – Ta 2.5 2.0 1000 Gate threshold voltage Vth (V) Ciss Coss Crss 100 Common source VGS = 0 V f = 1 MHz 1.5 1.0 Common source VDS = 10 V 0.5 ID = 1 mA Pulse test Ta = 25°C 10 0.1 1 10 0 −80 100 Drain-source voltage VDS −40 (V) 1.2 (2) 0.8 Device mounted on a Glass-epoxy board (a)(Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) t=10s (3) (4) 0.4 0 0 40 80 Ambient temperature 120 Ta 160 (°C) 120 Ta 50 20 40 16 (V) (1) 80 Dynamic input/output characteristics Drain-source voltage VDS (V) 1.6 40 Ambient temperature PD – Ta 2 0 VDD = 6 V 30 12 24 20 5 8 ID = 6 A VGS Ta = 25°C 4 Pulse test 6 12 Total Gate charge (°C) Common source 10 0 0 160 12 VDS 18 Qg 24 Gate-source voltage VGS (pF) Capacitance C −0.8 Drain-source voltage VDS 10000 Drain power dissipation PD (W) −0.6 0 30 (nC) 2006-11-16 TPC8212-H rth – tw Transient thermal impedance rth (℃/W) 1000 Single - pulse (4) (3) (2) 100 (1) 10 Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device opration (Note 3a) (2)Single-device value at dual opration (Note 3b) 1 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device opration (Note 3a) (4)Single-device value at dual opration (Note 3b) 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 100 Single-device value at dual opration (note 3b) Drain current ID (A) ID max (Pulse) * t =1ms * 10 10ms * 1 * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPC8212-H 7 2006-11-16