TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅣ) TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −4.5 Pulse (Note 1) IDP −18 Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 (Note 3) Drain current Single-pulse avalanche energy A W EAS 1.3 mJ Avalanche current IAR −2.25 A Repetitive avalanche energy Single-device value at dual operation (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain Source Drain Drain Gate Drain JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: For Notes 1 to 5, see page 3. 6 5 4 1 2 3 Caution: This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-12-04 TPC6108 Electrical Characteristics (Ta = 25°C) Characteristic IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Max Unit ⎯ ⎯ ±10 μA μA VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 RDS (ON) VGS = −4.5 V, ID = −2.2 A ⎯ 75 100 RDS (ON) VGS = −10 V, ID = −2.2 A ⎯ 50 60 |Yfs| VDS = −10 V, ID = −2.2 A 3.7 7.4 ⎯ ⎯ 570 ⎯ ⎯ 75 ⎯ ⎯ 85 ⎯ ID = −2.2 A VOUT ⎯ 3.5 ⎯ ⎯ 12 ⎯ ⎯ 21 ⎯ ⎯ 70 ⎯ ⎯ 13 ⎯ ⎯ 1.8 ⎯ ⎯ 2.5 ⎯ Ciss Crss Output capacitance Coss tr ton VDS = −10 V, VGS = 0 V, f = 1 MHz VGS 0V −10 V 4.7 Ω Switching time Fall time Typ. IDSS Reverse transfer capacitance Turn-on time VGS = ±16 V, VDS = 0 V Min V (BR) DSS Input capacitance Rise time Test Condition RL = 6.8 Ω Gate leakage current Symbol tf V V mΩ S pF ns VDD ≈ −15 V Turn-off time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge1 Qgs1 Gate-drain (“Miller”) charge Qgd Duty ≤ 1%, tw = 10 μs VDD ≈ −24 V, VGS ≈ −10 V, ID = −4.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −18 A ⎯ ⎯ 1.2 V VDSF IDR = −4.5 A, VGS = 0 V 2 2008-12-04 TPC6108 Marking (Note 5) Lot code (month) Lot No. (weekly code) S3H Part No. (or abbreviation code) Product-specific code Pin #1 Lot code (year) A line indicates Lead (Pb)-Free package Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● to the lower left of the Part No. marking indicates Pin 1. 3 2008-12-04 TPC6108 ID – VDS −10 −4 −4.5 ID – VDS −3.5 Common source Ta = 25°C Pulse Test ID −3 Common source Ta = 25°C Pulse Test −3.5 −8 −2.8 −3 −10 −4 −2.6 Drain current ID (A) −4 Drain current −10 −4.5 (A) −5 −2 −2.4 −1 −3 −6 −2.8 −4 −2.6 −2.4 −2 VGS = −2.2V 0 −0.2 0 −0.4 −0.6 Drain-source voltage −0.8 VDS VGS = −2.2V 0 −1.0 −1 0 (V) −2 Drain-source voltage ID – VGS (V) 100 25 −5 Common source Ta = 25°C Pulse Test −0.8 −0.6 ID = −4.5 A −0.4 −2.2 −0.2 −1.1 0 0 −2 −1 −4 −3 Gate-source voltage VGS −5 0 (V) −6 −8 VGS −10 (V) RDS (ON) – ID Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) −4 1000 Common source VDS = −10 V Pulse Test Ta = −55°C 10 100 25 1 0.1 −0. 1 −2 Gate-source voltage |Yfs| – ID 100 (V) VDS Ta = −55°C 0 VDS −5 VDS – VGS Common source VDS = −10 V Pulse Test −10 −4 −1.0 Drain-source voltage Drain current ID (A) −15 −3 −1 −10 −10 Common source Ta = 25°C Pulse Test 10 −0.1 −100 Drain current ID (A) VGS = −4.5 V 100 −1 −10 −100 Drain current ID (A) 4 2008-12-04 TPC6108 RDS (ON) − Ta IDR − VDS −100 150 Common source Ta = 25°C Pulse Test Drain reverse current IDR (A) ID = −1.1/−2.2/−4.5 A 100 VGS = −4.5 V 50 ID = −1.1/−2.2/−4.5 A VGS = −10 V −3 −1 −1 −40 0 40 80 120 VGS = 0 V −0.1 160 0 0.2 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) (pF) Capacitance C Coss −1 −10 Drain-source voltage −1.6 −1.2 −0.8 Common source VGS = −10 V ID = −1 mA Pulse Test −0.4 Crss 10 −0.1 0 −80 −100 −40 VDS (V) 0 40 80 120 160 Ambient temperature Ta (°C) Dynamic input / output characteristics PD − Ta −40 2.5 VDS Drain-source voltage 2.0 1.5 (1) DC 1.0 (2) t = 5s 0.5 (2) DC 0 40 80 120 −16 (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) t = 5s Drain power dissipation PD (W) (V) −2.0 Ciss 100 VDS 1.2 Vth − Ta Common source VGS = 0 V f = 1 MHz Ta = 25°C 1000 1.0 0.8 Drain-source voltage Capacitance – VDS 10000 0.6 0.4 −30 VDS Ambient temperature Ta (°C) −6 V −20 −8 VDD = −24 V −10 0 4 8 −4 Common source ID = −4.5 A Ta = 25°C Pulse Test VGS 0 160 −12 −12 V 12 16 20 VGS (V) 0 −80 0 −10 −5 −10 Gate-source voltage Drain-source ON-resistance RDS (ON) ( μΩ) Common source Pulse Test 0 Total gate charge Qg (nC) 5 2008-12-04 TPC6108 rth − tw 1000 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (b) (Note 2b) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 SINGLE PULSE 0.1 1m 10m 100m 1 Pulse width 10 100 1000 tw (S) Safe Operating Area −100 Drain current ID (A) ID max (pulse) * 1 ms * −10 10 ms * −1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. −0.1 −0.1 VDSS max −1 Drain-source voltage −10 VDS −100 (V) 6 2008-12-04 TPC6108 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2008-12-04