TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) • Low forward voltage: VFM(2) = 0.46 V (typ.) Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 kΩ) VDGR -20 V V VGSS ±8 DC (Note 1) ID -2.7 Pulse (Note 1) IDP -10.8 (Note 4) EAS 1.2 mJ Avalanche current IAR -1.35 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Gate-source voltage Drain current Single pulse avalanche energy A JEDEC ― JEITA ― TOSHIBA SBD (Ta = 25°C) Characteristics 2-3U1C Weight: 0.011 g (typ.) Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Circuit Configuration 8 7 6 5 1 2 3 4 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (1) 1.35 PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 PD (2) 0.33 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Unit W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 TPCF8B01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W °C/W This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Marking (Note 7) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. (weekly code) F8A Product-specific code Lot code (year) Note 8 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) he power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD =-16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -1.35 A Note 5: Repetitive rating; Pulse width limited by maximum channel temperature. Note 6: Rectangular waveform (α =180o), VR =15V. Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal No. 1. Note 8 A dot marking identifies the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPCF8B01 Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Gate leakage current Symbol IGSS Test Condition VGS = ±8 V, VDS = 0 V Min Typ. Max Unit ⎯ ⎯ ±10 μA μA IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 V (BR) DSS ID = -10 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -10 mA, VGS = 8V -12 ⎯ ⎯ Vth VDS = -10 V, ID = -200 μA -0.5 ⎯ -1.2 RDS (ON) VGS = -1.8 V, ID = -0.7 A ⎯ 215 300 RDS (ON) VGS = -2.5 V, ID = -1.4A ⎯ 110 160 RDS (ON) VGS = -4.5 V, ID = -1.4 A ⎯ 72 110 Forward transfer admittance |Yfs| VDS = -10 V, ID = -1.4 A 2.4 4.7 ⎯ Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 70 ⎯ Output capacitance Coss ⎯ 80 ⎯ ⎯ 5 ⎯ ⎯ 9 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton -5 V Turn-off time 4.7 Ω Switching time Fall time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = -1.4 A VOUT 0V RL = 7.14 Ω Drain cut-off current VDD ∼ − -10 V Duty ≤ 1%, tw = 10 μs VDD ∼ − -16 V, VGS = -5 V, ID = -2.7 A V V mΩ S pF ns ⎯ 8 ⎯ ⎯ 26 ⎯ ⎯ 6 ⎯ ⎯ 4 ⎯ ⎯ 2 ⎯ nC MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ -10.8 A ⎯ ⎯ -1.2 V Min Typ. Max Unit VDSF IDR = -2.7 A, VGS = 0 V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol Test Condition VFM(1) IFM = 0.7 A ⎯ 0.43 ⎯ V VFM(2) IFM = 1.0 A ⎯ 0.46 0.49 V VRRM = 20 V ⎯ ⎯ 50 μA VR = 10 V, f = 1 MHz ⎯ 54 ⎯ pF IRRM Cj 3 2009-09-29 TPCF8B01 MOSFET ID – VDS ID – VDS −5 −10 −2.5 −4 −4.5 −2.8 −3 −3.5 −1.8 −3 −2 VGS = −1.5 V −1 0 0 −0.4 −0.6 Drain-source voltage VDS −0.8 −3 −4 −6 −2 −4 −1.8 VGS = −1.5 V 0 0 −1.0 −1 (V) −2 (V) Drain-source voltage VDS Drain current ID −3 Ta = 25°C Ta = −55°C −1 0 0 Ta = 100°C −0.5 −1.0 −1.5 Gate-source voltage −2.0 −0.8 −0.6 −0.4 ID = −2.7 A −0.2 −1.4 A −0.7 A 0 0 −2.5 −2 VGS (V) −4 Gate-source voltage Common source VDS = −10 V Pulse test −8 VGS (V) Common source Ta = 25°C Pulse test Drain-source ON resistance RDS (ON) (mΩ) |Yfs| (S) Forward transfer admittance −6 RDS (ON) – ID 1000 Ta = −55°C 10 Ta = 25°C Ta = 100°C 1 −0.1 (V) Common source Ta = 25°C Pulse test |Yfs| – ID 100 VDS −5 VDS – VGS Common source VDS = −10 V Pulse test −2 −4 −1.0 (A) −4 −3 Drain-source voltage ID – VGS −5 Common source Ta = 25°C Pulse test −3.5 −2 Common source Ta = 25°C Pulse test −0.2 −2.5 −5 −8 (A) −5 −2.8 −4.5 Drain current ID Drain current ID (A) −4 −2 −1 −1.8 V −2.5 V 100 VGS = −4.5 V 10 −0.1 −10 Drain current ID (A) −1 −10 Drain current ID (A) 4 2009-09-29 TPCF8B01 RDS (ON) – Ta IDR – VDS −100 Common source ID = −1.4 A Common source −0.7 A VGS = −1.8 V 200 ID = −1.4 A ID = −2.7 A 150 100 50 −0.7 A −2.5 V ID = −0.7, −1.4, −2.7 A −4.5 V 0 −80 −40 0 40 80 120 Ta = 25°C Pulse test −10 −1.8 −1 −1 0 160 −4.5 −2.5 0.4 0.8 Capacitance – VDS Vth (V) 1000 Gate threshold voltage (pF) Capacitance C Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss −1.5 −1 −10 Drain-source voltage VDS −0.5 −40 0 1.2 (2) −10 (1)Single-device operation (Note 3a) (V) (4)Single-device value at dual operation (Note 3b) ｔ＝5S (4) 40 80 120 Ambient Temperature Ta (°C) −8 −4 V VDS −12 VDD = −16 V −6 VGS −8 Common source −4 ID = −2.7 A Ta = 25°C −4 −2 Pulse test 0 0 160 −8 V −16 VDS (3)Single-device operation (Note 3a) (3) 0 0 160 −20 Device mounted on a glass-epoxy board (a) (Note 2a) 0.8 0.4 120 Dynamic input/output characteristics Device mounted on a glass-epoxy board (b) (Note 2b) (1) 80 (V) (2)Single-device value at dual operation (Note 3b) 1.6 40 Ambient temperature Ta (°C) −100 Drain-source voltage Drain power dissipation PD (W) t=5s (V) Common source VDS = −10 V ID = −200 μA Pulse test PD – Ta 2 VDS 2.0 −1.0 −0.0 −80 10 −0.1 1.6 Vth – Ta −2.0 100 1.2 Drain-source voltage Ambient temperature Ta (°C) 10000 VGS = 0 V −2 −4 −6 −8 VGS (V) Drain-source ON resistance RDS (ON) (mΩ) 250 Drain reverse current IDR (A) Pulse test Gate-source voltage 300 0 −10 Total gate charge Qg (nC) 5 2009-09-29 TPCF8B01 rth – tw 1000 (4) Single pulse (3) Transient thermal impedance rth (°C/W) (2) (1) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 Pulse width 10 100 1000 tw (s) Safe operating area Drain current ID (A) 100 ID max (pulse)* 10 1 ms* 10 ms* 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase 0.1 0.1 in temperature. 1 Drain-source voltage VDSS max 10 100 VDS (V) 6 2009-09-29 TPCF8B01 SBD iF – vF PF (AV) – IF (AV) 10 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 0.8 Tj=150℃ 1 125℃ 75℃ 25℃ 0.1 0.7 DC 0.6 180° 120° 0.5 α=60° 0.4 Rectangular waveform 0.3 0.2 0° α 0.1 0.01 0.0 0.0 0.2 0.4 0.8 0.6 1.0 0.0 1.4 1.2 Instantaneous forward voltage vF (V) 0.2 0.4 0.6 IF(AV) 0° α I 360° Conduction angle:α V R =15V 80 60 α=60° 40 180° 120° 1.4 1.6 IF (AV) (A) (4) Transient thermal impedance rth (°C/W) Maximum allowable lead temperature Ta max (°C) 140 100 1.2 100 Rectangular waveform Single-device operation (Note 3a) 120 1.0 rth– tw Ta max – IF (AV) 160 0.8 Average forward current Device mounted on a glass-epoxy board(a) (Note 2a) DC (3) (2) (1) 100 Device mounted on a glass-epoxy board(a)(Note 2a) 10 (1)Single-device operation(Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) 20 (4)Single-device value at dual operation(Note 3b) 0 0.0 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 1.4 1 1m 1.6 10 m 100 1 Pulse width IF (AV) (A) Surge forward current (non-repetitive) 10 100 1000 tw (s) Cj – VR (typ.) 1000 10 f=1MHz Ta=25℃ Ta=25℃ f=50Hz Cj (pF) 9 8 7 Junction capacitance Peak surge forward current IFSM (A) 360° Conduction angle: α 6 5 4 3 2 100 1 10 0 1 10 100 1 Number of cycles 10 Reverse voltage 7 100 VR (V) 2009-09-29 TPCF8B01 IR – Tj 0.06 10 Average reverse power dissipation PR (AV) (W) 1 Reverse current 0.1 VR=20V 0.01 10V 5V 0.001 (typ.) Rectangular waveform Pulse test IR (mA) PR (AV) – VR (typ.) 0° 360° 0.05 DC VR 0.04 300° α Conduction angle:α Tj=125℃ 240° 0.03 180° 120° 0.02 60° 0.01 0.00 0.0001 0 20 40 60 80 100 120 140 160 0 Junction temperature Tj (°C) 5 10 Reverse voltage 8 15 VR 20 (V) 2009-09-29 TPCF8B01 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2009-09-29