2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −60 V Drain-gate voltage (RGS = 20 kΩ) VDGR −60 V Gate-source voltage VGSS ±20 V ID ID −5 A JEDEC ― IDP IDP −20 A JEITA ― Drain power dissipation PD 1.2 W Single-pulse avalanche energy (Note 2) EAS 40.5 mJ Avalanche current IAR −5 A Repetitive avalanche energy (Note 3) EAR 0.12 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to ambient Symbol Max Unit Rth (ch−a) 104 °C / W Note 1: The channel temperature should not exceed 150℃ during use. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SJ669 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = −60 V, VGS = 0 V — — −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V V (BR) DSX ID = −10 mA, VGS = 20 V −35 — — V Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.16 0.25 VGS = −10 V, ID = −2.5 A — 0.12 0.17 VDS = −10 V, ID = −2.5 A 2.5 5.0 — — 700 — — 60 — — 90 — — 14 — — 24 — — 14 — — 95 — — 15 — — 11 — — 4 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr tr VDS = −10 V, VGS = 0 V, f = 1 MHz ID = −2.5 A 0V VGS Output Switching time ton ton tf tf toff toff Total gate charge (gate−source plus gate−drain) 4.7 Ω −10 V RL = 12 Ω Duty ≤ 1%, tw = 10 μs Qgs Gate−drain (“Miller”) charge Qgd S pF ns VDD ∼ − −30 V Qg Gate−source charge Ω VDD ≈ −48 V, VGS = −10 V, ID = −5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF Reverse recovery time trr Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V — — 1.7 V IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / μs — 40 — ns — 32 — nC Marking J669 Part No. (or abbreviation code) Lot No. Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SJ669 ID – VDS −5 −10 −6 −4. −3.5 Common source Ta = 25°C Pulse test −8 −4 ID – VDS −8 ID −3 Drain current −2.8 −2 VGS = −2.5V −1 0 0 −0.4 −0.8 −1.2 Drain−source voltage −1.6 VDS −10 −6 −4 −8 −3.5 −6 −4 −3 −2 0 −2.0 VGS = −2.5 V 0 (V) −2 −4 ID – VGS −8 VDS (V) Common source VDS = −10 V Pulse test −6 Drain−source voltage (A) ID Drain current VDS 25 −4 −2 100 0 −1 −2 Ta = −55°C −3 −4 10 VGS −1.2 −0.8 −5 −0.4 −2.5 ID = −1.2 A 0 (V) −4 −8 Common source VDS = −10 V Pulse test Ta = −55°C 25 1 Drain current −10 ID −16 VGS −20 (V) RDS (ON) − ID 0.5 −1 −12 Gate−source voltage 100 0.1 −0.1 (V) Common source Ta = 25°C Pulse test −1.6 0 −5 Drain−source ON-resistance RDS (ON) (Ω) ⎪Yfs⎪ 100 −10 VDS – VGS ⎪Yfs⎪ − ID (S) −8 −2.0 Gate−source voltage Forward transfer admittance −6 Drain−source voltage −10 0 Common source Ta = 25°C Pulse test (A) −3 (A) ID Drain current −10 Common source Ta = 25°C Pulse test 0.4 0.3 0.2 −4 V 0.1 VGS = −10V 0 −100 0 (A) 3 −2 −4 −6 Drain current ID −8 −10 (A) 2009-09-29 2SJ669 RDS (ON) − Ta IDR − VDS 10 Common source Ta = 25°C Pulse test (A) Common source Pulse test −0.3 −3 IDR ID = −5 A −10 −5 −2.5 Drain reverse current Drain−source ON-resistance RDS (ON) (Ω) −0.4 −1.2 −0.2 −5 VGS = −4 V −1.2 −2.5 −0.1 VGS = −10 V 0 −80 0.1 −40 0 40 80 Ambient temperature 120 Ta −1 1 160 0 (°C) 0.2 0.4 VGS = 0 V 0.6 0.8 Drain−source voltage 1.0 VDS 1.2 (V) Capacitance – VDS Vth − Ta Common source −2.0 Vth (V) VGS = 0 V Tc = 25°C 1000 Coss Crss −1 −10 Drain−source voltage −40 0 40 80 VDS (V) Drain−source voltage 1.5 1.0 0.5 −25 80 120 Ambient temperature 160 Ta 200 Common source ID = −5 A −40 Ta = 25°C −15 −12V −20 4 −10 −24V VDD = −48 V −10 −5 VGS 0 5 10 15 Total gate charge (°C) −20 Pulse test −30 0 40 160 (°C) −50 VDS 0 120 Ta Dynamic input/output characteristics (W) PD −0.4 (V) 2.0 Drain power dissipation −0.8 Ambient temperature PD − Ta 0 −1.2 0 −80 −100 VDS −1.6 (V) 10 −0.1 Common source VDS = −10 V ID = 1 mA Pulse test 20 Qg 25 30 VGS Capacitance 100 Gate threshold voltage Ciss C (pF) f = 1 MHz Gate−source voltage 10000 0 (nC) 2009-09-29 2SJ669 rth − tw 1 rth (t)/Rth (ch-a) Normalized transient thermal impedance 10 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 Single pulse T Duty = t/T Rth (ch-a) = 104°C/W 0.001 100 μ 1m 10 m 100 m Pulse width 1 tw 10 100 (s) EAS – Tch 50 Safe operating area (mJ) 100 100 μs * ID max (Continuous) Avalanche nergy 10 EAS ID max (Pulsed) * Drain current ID (A) 1 ms * 1 DC operation Ta = 25°C 40 30 20 10 0.1 0 25 0.01 75 100 125 Channel temperature (initia) *:Single nonrepetitive pulse 150 Tch (°C) Tc = 25°C Curves must be linearly with increase derated in VDSS max temperature. 0.001 0.01 50 0.1 1 Drain−source voltage 10 VDS BVDSS 0V 100 IAR −15 V (V) VDD Test circuit RG = 25 Ω VDD = −25 V, L = 2.2 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SJ669 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29