2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6.5 Pulse (Note 1) IDP 19.5 Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAR 375 mJ Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.56 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. 1 This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3879 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Drain-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3.5 A 2.5 5.2 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 25 ⎯ Output capacitance Coss ⎯ 140 ⎯ ⎯ 35 ⎯ ⎯ 80 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr VOUT 0V ton RL= 114 Ω 50 Ω Turn-on time ID = 3.5 A 10 V VGS Switching time VDD ∼ − 400 V ns ⎯ 50 ⎯ toff ⎯ 220 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 35 ⎯ Gate-source charge Qgs ⎯ 22 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 13 ⎯ Fall time tf Turn-off time pF Duty ≤ 1%, tw = 10 μs VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6.5 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 19.5 A IDR = 6.5 A, VGS = 0 V ⎯ ⎯ −1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 6.5 A, VGS = 0 V, ⎯ 1200 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 11.5 ⎯ μC Reverse recovery charge Marking K3879 Part No. (or abbreviation code) Lot No. (weekly code) Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3879 ID − VDS COMMON SOURCE Common source = 25°C TcTc＝ 25°C PULSE Pulse testTEST 4 8,10 ID − VDS 10 6 5.5 3 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 5.25 2 5 1 COMMON Common SOURCE source Tc = 25°C Ta=25℃ PULSE Pulse TEST 8 8,10 6 5.75 test 6 5.5 4 5.25 5 2 VGS=4.5V VGS=4.5V 0 0 0 2 4 6 DRAIN−SOURCE VOLTAGE 10 0 DRAIN−SOURCE VOLTAGE VDS (V) PULSE TEST 8 Ta=100℃ 4 -55 25 0 30 40 50 COMMON SOURCE Common source Tc = 25°C Ta=25℃ PULSE TEST Pulse test 16 ID=7A 12 8 3.5 4 1.5 0 0 2 4 6 GATE−SOURCE VOLTAGE VGS 8 10 0 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) (V) ⎪Yfs⎪ − ID 100 10 20 RDS (ON) − ID 10.00 Common source COMMON SOURCE =20V VDSV=DS20 V PulseTEST test PULSE DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 20 VDS − VGS 20 Common source COMMON SOURCE V DS=20V VDS = 20test V Pulse 12 10 DRAIN−SOURCE VOLTAGE VDS (V) ID − VGS 16 DRAIN CURRENT ID (A) 8 VDS (V) 25 -55 Ta=100℃ 1 0.1 Common source COMMON SOURCE V GS =10V VGS = 10 V Tc =Tc=25℃ 25°C PULSE PulseTEST test 1.00 0.10 0.1 1 10 DRAIN CURRENT ID (A) 100 0.01 3 0.1 1 DRAIN CURRENT ID (A) 10 2009-09-29 2SK3879 RDS (ON) − Tc Common COMMONsource SOURCE =10V V GS VGS = 10 V PULSE PulseTEST test 4 7 3 3 2 ID=1.5A 1 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 10 VGS=0､-1V 1 -0.4 -0.6 -0.8 -1 -1.2 Vth − Tc Vth (V) 5 1000 Coss 100 COMMON SOURCE Common source VGS=0V =0V V GS f = 1 MHz f=1MHz Tc = 25°C Tc=25℃ -0.2 DRAIN−SOURCE VOLTAGE VDS (V) GATE THRESHOLD VOLTAGE Crss 10 4 3 2 COMMON SOURCE Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test VDS = 10 V 1 0 1 10 DRAIN−SOURCE VOLTAGE VDS (V) 100 -80 0 40 80 120 CASE TEMPERATURE Tc (°C) 160 DYNAMIC INPUT/OUTPUT CHARACTERISTICS PD − Tc 20 500 DRAIN−SOURCE VOLTAGE VDS (V) 120 -40 100 80 60 40 20 (V) 0.1 400 16 V DS VDD=100V 300 12 200V 400V 200 8 COMMON CommonSOURCE source IDID=6.5A = 6.5 A 100 4 TcTc=25℃ = 25°C Pulse test PULSE TEST 0 0 0 0 40 80 CASE TEMPERATURE 120 0 160 GATE−SOURCE VOLTAGE VGS (pF) 3 0 Ciss CAPACITANCE C 1 160 CAPACITANCE – VDS 10000 PD (W) COMMON SOURCE Common source Tc = 25°C Tc=25℃ PULSE TEST Pulse test 0.1 0 DRAIN POWER DISSIPATION IDR − VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 5 20 40 60 TOTAL GATE CHARGE Qg (nC) Tc (°C) 4 2009-09-29 2SK3879 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth − tw 10 1 duty=0.5 0.1 0.1 0.05 0.02 0.01 Ｐ ＤＭ 0.01 t Ｔ SINGLE PULSE Ｄｕｔｙ=t/Ｔ Ｒｔｈ（ ｃｈ－ｃ） =1.56℃ 0.001 0.00001 0.0001 0.001 0.01 0.1 PULSE WIDTH tw 1 (S) SAFE OPERATING AREA EAS – Tch 100 10 AVALANCHE ENERGY EAS (mJ) 400 ＭＡＸ(ＰＵＬＳＥＤ)＊ IＩDＤMAX (PULSED) * DRAIN CURRENT ID (A) 10 １００μｓ＊ 100 μs * ＭＡＸ(ＣＯＮＴＩＮＵＯＵＳ) IＩDＤ MAX (CONTINUOUS) * 1１ｍｓ＊ ms* 1 DC ＤＣ OPERATION ＯＰＥＲＡＴＩＯＮ Ｔｃ＝２５℃ Tc = 25° 0.1 ＊ SINGLENONREPETITIVE NONREPETITIVE * SINGLE PULSE Tc =PULSE 25°C Tc=25℃ Curves be detaed Curves mustmust be derated linearly with lineality with increase in increase in temperature temperature. 350 300 250 200 150 100 50 0 25 50 75 100 125 CHANNEL TEMPERATURE (INITIAL) 150 Tch (°C) Ｖ ＤＳＳ ＭＡＸ． 0.01 1 10 100 1000 DRAIN−SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 16.1 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK3879 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29