TOSHIBA 2SK3847

2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive
Applications
z Low drain−source ON resistance
: RDS (ON) = 12 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 36 S (typ.)
Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V)
z Enhancement mode : Vth = 1.5 to 2.5 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
40
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate−source voltage
VGSS
±20
V
DC (Note 1)
ID
32
A
Pulse (Note 1)
IDP
96
A
Drain power dissipation
PD
30
W
JEDEC
―
Single-pulse avalanche energy
(Note 2)
EAS
47
mJ
JEITA
―
Avalanche current
IAR
32
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
4.17
°C/W
Thermal resistance, channel to
ambient
Rth (ch−a)
83.3
°C/W
Drain current
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristic
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH,
RG = 25 Ω, IAR = 32 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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2006-09-27
2SK3847
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cutoff current
IDSS
VDS = 40 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
40
—
—
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
—
—
VDS = 10 V, ID = 1 mA
1.5
—
2.5
VGS = 4.5 V, ID = 16 A
—
19
26
VGS = 10 V, ID = 16 A
—
12
16
VDS = 10 V, ID = 16 A
18
36
—
—
1980
—
—
210
—
—
300
—
—
7
—
22
—
Vth
Drain−source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ID = 16 A
10 V
VGS
0V
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
Output
RL = 1.25 Ω
Gate threshold voltage
—
VDD ≈ 20 V
—
10
—
—
60
—
—
40
—
—
28
—
—
12
—
15 Ω
Drain−source breakdown voltage
Duty ≤ 1%, tw = 10 μs
VDD ≈ 32 V, VGS = 10 V, ID = 32 A
V
V
mΩ
S
pF
ns
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
32
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
96
A
Forward voltage (diode)
VDSF
IDR = 32 A, VGS = 0 V
—
—
−1.5
V
Reverse recovery time
trr
IDR = 32 A, VGS = 0 V
dlDR/dt = 50 A/μS
—
40
—
ns
—
24
—
nC
Reverse recovery charge
Qrr
Marking
K3847
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb) – free package or
lead (Pb) – free finish.
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2006-09-27
2SK3847
ID – VDS
Common source
Tc = 25°C
Pulse test
10
ID – VDS
6
4
(A)
ID
4.75
4.5
3.5
Drain current
ID
5
12
8
3.25
4
6
80
3.75
5.5
Common source
Tc = 25°C
Pulse test
5.5
10
8
8
16
Drain current
100
4.25
5
(A)
20
VGS = 3 V
4.75
60
4.5
4.25
40
4
3.75
20
VGS = 3 V
3.5
3.25
0
0
0.1
0.2
0.3
0.4
Drain−source voltage
VDS
0
0.5
0
(V)
2
4
VDS (V)
(A)
Drain−source voltage
ID
Drain current
40
25
0
Tc = −55°C
100
0
2
4
6
8
Gate−source voltage
VGS
0.6
ID = 32 A
0.4
16
0.2
8
0
(V)
4
8
12
Gate−source voltage
16
VGS
20
(V)
RDS (ON) − ID
1000
Common source
Common source
VDS = 10 V
Pulse test
Tc = −55°C
Drain−source ON resistance
RDS (ON) (mΩ)
(S)
Common source
Tc = 25°C
Pulse test
100
⎪Yfs⎪
(V)
0.8
0
10
⎪Yfs⎪ − ID
Forward transfer admittance
10
VDS – VGS
60
20
VDS
1.0
Common source
VDS = 10 V
Pulse test
80
8
Drain−source voltage
ID – VGS
100
6
100
25
10
Tc = 25°C
Pulse test
100
VGS = 4.5 V
10
1
1
10
Drain current
10
100
ID
(A)
1
Drain current
3
100
10
ID
(A)
2006-09-27
2SK3847
RDS (ON) − Tc
IDR − VDS
100
(A)
Common source
Pulse test
40
10
IDR
ID = 32 A
16
8
VGS = 4.5 V
ID = 32, 16, 8 A
10
VGS = 10 V
−40
0
40
Case temperature
80
Tc
VGS = 0, −1 V
Common source
Tc = 25°C
Pulse test
1
160
120
1
−0.4
0
(°C)
−0.8
C − VDS
5
Vth (V)
(pF)
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Gate threshold voltage
Capacitance
C
Ciss
1000
Coss
Crss
100
0.1
1
10
Drain−source voltage
VDS
4
3
2
1
0
−80
100
−40
(V)
40
80
Tc
50
VDS (V)
40
Drain−source voltage
30
20
10
80
Case temperature
120
160
(°C)
Dynamic input/output
characteristics
(W)
PD
0
Case temperature
50
40
−2.0
(V)
Common source
VDS = 10 V
ID = 1 mA
Pulse test
PD − Tc
Drain power dissipation
−1.6
VDS
Vth − Tc
10000
0
0
−1.2
Drain−source voltage
120
Tc
40
30
(°C)
16
VDS
12
20
8
8
VDS = 32 V
10
4
VGS
20
40
Total gate charge
4
20
16
0
0
160
Common source
ID = 32 A
Tc = 25°C
Pulse test
(V)
0
−80
3
10
60
Qg
80
VGS
20
5
Gate−source voltage
30
Drain reverse current
Drain−source ON resistance
RDS (ON) (mΩ)
50
0
100
(nC)
2006-09-27
2SK3847
rth − tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
PDM
0.1
0.1
0.05
t
Single pulse
0.02
T
Duty = t/T
Rth (ch-c) = 4.17°C/W
0.01
0.01
10 μ
100 μ
1m
10 m
Pulse width
100 m
tw
1
(s)
Safe operating area
EAS – Tch
1000
100
EAS (mJ)
100
ID max (pulse) *
Avalanche energy
(A)
ID max (continuous)
ID
10 ms *
10
DC operation
Tc = 25°C
1
*
40
20
0
25
1
Drain−source voltage
50
75
100
Channel temperature (initial)
Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
80
60
1 ms *
Drain current
10
15 V
VDSS max
10
VDS
Tch (°C)
IAR
VDD
(V)
Test circuit
RG = 25 Ω
VDD = 25 V, L = 48 μH
5
150
BVDSS
0V
100
125
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2006-09-27
2SK3847
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-09-27