TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 15 Pulse (t = 1 ms) (Note 1) IDP 60 Drain power dissipation (Tc = 25°C) PD 50 W Single pulse avalanche energy (Note 2) EAS 542 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 5.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current 1: Gate 2: Drain 3: Source A JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.1 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2008-09-16 TK15A50D Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 7.5 A ⎯ 0.24 0.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 7.5 A 2.0 7.0 ⎯ S Input capacitance Ciss ⎯ 2300 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 250 ⎯ VOUT ⎯ 50 ⎯ RL = 26 Ω ⎯ 100 ⎯ ⎯ 25 ⎯ ⎯ 140 ⎯ ⎯ 40 ⎯ ⎯ 25 ⎯ ⎯ 15 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 7.5 A 10 V VGS 0V tr tf Turn-off time VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 15 A (Note 1) IDRP ⎯ ⎯ ⎯ 60 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 15 A, VGS = 0 V, ⎯ 1600 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 20 ⎯ μC Marking K15A50D Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish 2 2008-09-16 TK15A50D ID – VDS ID – VDS 50 10 8 10 9 7.25 8.5 (A) 16 COMMON SOURCE Tc = 25°C PULSE TEST 7 DRAIN CURRENT ID DRAIN CURRENT ID (A) 20 6.75 12 6.5 6.25 8 6 4 VGS = 5.5 V 40 8 30 7.5 20 7 6.5 10 VGS = 6 V 0 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE 0 10 VDS 10 20 VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST 30 Tc = 25°C 20 Tc = 100°C Tc = −55°C 10 0 0 2 4 6 8 GATE-SOURCE VOLTAGE 12 10 VGS 8 6 ID = 15 A 4 7.5 2 3.8 0 0 4 8 VGS 20 (V) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 16 1 PULSE TEST Tc = −55°C 25 100 1 1 12 GATE-SOURCE VOLTAGE VDS = 20 V 0.1 0.1 (V) COMMON SOURCE Tc = 25℃ PULSE TEST (V) COMMON SOURCE 10 VDS 50 10 ⎪Yfs⎪ – ID 100 40 VDS – VGS DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 40 30 DRAIN-SOURCE VOLTAGE (V) ID – VGS 50 COMMON SOURCE Tc = 25°C PULSE TEST 10 DRAIN CURRENT ID VGS = 10 V､15 V 0.1 COMMON SOURCE Tc = 25°C PULSE TEST 0.01 0.1 100 (A) 1 10 DRAIN CURRENT ID 3 100 (A) 2008-09-16 TK15A50D COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE CURRENT IDR 0.6 ID = 15A 0.4 7.5 3.8 0.2 −40 0 40 80 CASE TEMPERATURE 120 Tc 160 COMMON SOURCE Tc = 25°C PULSE TEST 10 10 1 5 3 1 0.1 0 (°C) −0.4 −0.2 CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) (V) Coss 100 Crss COMMON SOURCE VGS = 0 V Tc = 25°C 1 0.1 1 DRAIN-SOURCE VOLTAGE VDS 3 2 COMMON SOURCE 1 V DS = 10 V ID = 1 mA PULSE TEST 0 −80 100 10 4 (V) −40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) 80 DRAIN-SOURCE VOLTAGE 60 40 20 120 80 CASE TEMPERATURE 40 CASE TEMPERATURE PD – Tc 40 0 Tc 160 (°C) 500 400 20 VDS 16 VDD = 100 V 300 200 200 COMMON SOURCE VGS ID = 15 A Tc = 25°C PULSE TEST 100 0 0 20 40 TOTAL GATE CHARGE 4 12 400 4 0 80 60 Qg 8 (V) (pF) 1000 C CAPACITANCE VDS −1.4 Vth – Tc f = 1 MHz DRAIN POWER DISSIPATION PD (W) −1.2 5 Ciss 0 0 −1.0 −0.8 −0.6 DRAIN-SOURCE VOLTAGE 10000 10 VGS = 0 V VGS 0 −80 100 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) 0.8 IDR – VDS (A) RDS (ON) – Tc 1.0 (nC) 2008-09-16 TK15A50D NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty = 0.5 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 0.01 T SINGLE PULSE 0.001 10 μ 100 μ 1m Duty = t/T Rth (ch-c) = 2.5°C/W 10 m PULSE WIDTH 100 m 1 tw (s) SAFE OPERATING AREA EAS – Tch 600 ID max (pulsed) * 100 μs * ID max (continuous) * 500 AVALANCHE ENERGY EAS (mJ) 100 1 ms * ID (A) 10 DRAIN CURRENT 1 10 DC operation Tc = 25°C 0.1 400 300 200 100 0 25 *: SINGLE NONREPETITIVE 0.01 PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.001 1 10 50 75 125 100 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) VDSS max 100 DRAIN-SOURCE VOLTAGE 1000 VDS 15 V (V) BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 4.1 mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2008-09-16 TK15A50D RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-09-16