2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V ID 2.5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1: Gate 2: Drain 3: Source A IDP 7.5 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 216 mJ Avalanche current IAR 2.5 A Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA Channel temperature Tch 150 °C Weight : 1.7 g (typ.) Storage temperature range Tstg -55~150 °C JEDEC ― JEITA SC-67 2-10U1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics 2 Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 1 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature 3 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-10 2SK3566 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VGS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 5.6 6.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 50 ⎯ VOUT ⎯ 20 ⎯ RL = 133 Ω ⎯ 60 ⎯ ⎯ 30 ⎯ ⎯ 100 ⎯ ⎯ 12 ⎯ ⎯ 7 ⎯ ⎯ 5 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 1.5 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 200 V Duty < = 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID =2.5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 2.5 A (Note 1) IDRP ⎯ ⎯ ⎯ 7.5 A IDR =2.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF Reverse recovery time trr IDR = 2.5 A, VGS = 0 V, ⎯ 720 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 3.6 ⎯ μC Marking K3566 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK3566 ID – VDS ID – VDS 8 6 5.5 10 5.25 1.2 (A) 1.6 COMMON SOURCE Tc = 25°C PULSE TEST 3 DRAIN CURRENT ID DRAIN CURRENT ID (A) 2 5 0.8 4.75 4. 5 0.4 2.5 COMMON SOURCE Tc = 25°C PULSE TEST 10 8 6 5.5 2 5.25 1.5 5 1 4.75 0.5 4. 5 VGS = 4 V 0 0 4 8 12 16 DRAIN-SOURCE VOLTAGE 20 VDS VGS = 4 V 0 0 24 (V) 12 ID – VGS VDS (V) PULSE TEST DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID VDS = 20 V 3 2 Tc = −55°C 100 25 0 0 2 6 4 8 GATE-SOURCE VOLTAGE 10 VGS 12 COMMON SOURCE Tc = 25℃ PULSE TEST 30 ID = 2.5 A 20 1.5 10 0.8 0 0 4 Tc = −55°C 25 100 1 0.1 COMMON SOURCE VDS = 20 V PULSE TEST 1 DRAIN CURRENT ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 12 16 VGS 20 (V) RDS (ON) – ID 100 0.1 8 GATE-SOURCE VOLTAGE ⎪Yfs⎪ – ID 0.01 0.01 (V) 40 (V) 10 1 VDS VDS – VGS COMMON SOURCE 1 36 DRAIN-SOURCE VOLTAGE 5 4 24 10 (A) COMMON SOURCE Tc = 25°C PULSE TEST 10 1 0.01 VGS = 10 V 0.1 1 DRAIN CURRENT ID 3 10 (A) 2006-11-10 2SK3566 RDS (ON) – Tc IDR – VDS 10 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) PULSE TEST 16 12 ID = 1.5A 8 VGS = 10 V 0.8 4 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc COMMON SOURCE Tc = 25°C 5 PULSE TEST 3 1 0.5 0.3 1 10 160 (°C) −0.4 −0.8 CAPACITANCE – VDS VDS (V) Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) Ciss (pF) 100 Coss 10 COMMON SOURCE Crss VGS = 0 V Tc = 25°C 1 10 DRAIN-SOURCE VOLTAGE VDS VDS = 10 V 1 ID = 1 mA PULSE TEST (V) −40 0 40 80 CASE TEMPERATURE 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) DRAIN-SOURCE VOLTAGE 40 30 20 10 120 CASE TEMPERATURE COMMON SOURCE 100 50 80 2 0 −80 PD – Tc 40 3 160 Tc 200 (°C) 500 20 (V) 1 0.1 4 400 16 VDS 200 300 12 VDD = 100 V VGS 200 8 400 COMMON SOURCE ID = 2.5 A 100 PULSE TEST 0 0 5 10 TOTAL GATE CHARGE 4 4 Tc = 25°C 15 Qg 20 0 VGS C CAPACITANCE −1.6 5 f = 1 MHz DRAIN POWER DISSIPATION PD (W) −1.2 DRAIN-SOURCE VOLTAGE 1000 0 0 VGS = 0V 3 0.1 0 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 20 (nC) 2006-11-10 2SK3566 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t SINGLE PULSE 0.01 T Duty Duty = t/T = t/T Rth Rth = 3.125°C/W = 1.25°C/W (ch-c) (ch-c) 0.001 10μ 100μ 1ｍ 10ｍ PULSE WIDTH 100ｍ 1 tw (s) SAFE OPERATING AREA EAS – Tch 250 ID max (PULSED) * 100 μs * ID max (CONTINUOUS) * 1 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 10 10 1 ms * DC OPERATION Tc = 25°C 0.1 200 150 100 50 ※ SINGLE NONREPETITIVE PULSE Tc=25℃ 0 25 CURVES MUST BE DERATED LINEARLY WITH VDSS max INCREASE IN TEMPERATURE. 0.01 1 10 100 DRAIN-SOURCE VOLTAGE 1000 VDS 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) 10000 (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 43.4mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-10 2SK3566 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-10