TOSHIBA 2SJ567_06

2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
•
Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
•
Low leakage current: IDSS = −100 μA (max) (VDS = −200 V)
•
Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
−200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
−2.5
Pulse
(Note 1)
IDP
−10
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
−2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
A
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
JEDEC
―
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEITA
SC-64
Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A
RG = 25 Ω
TOSHIBA
2-7J1B
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
Weight: 0.36 g (typ.)
This transistor is an electrostatic-sensitive device. Handle with care.
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2SJ567
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cutoff current
IDSS
VDS = −200 V, VGS = 0 V
⎯
⎯
−100
μA
ID = −10 mA, VGS = 0 V
−200
⎯
⎯
V
Drain-source breakdown voltage
V (BR) DSS
Vth
VDS = −10 V, ID = −1 mA
−1.5
⎯
−3.5
V
Drain-source ON-resistance
RDS (ON)
VGS = −10 V, ID = −1.5 A
⎯
1.6
2.0
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = −10 V, ID = −1.5 A
1.0
2.0
⎯
S
Input capacitance
Ciss
⎯
410
⎯
Reverse transfer capacitance
Crss
⎯
40
⎯
Output capacitance
Coss
⎯
145
⎯
⎯
20
⎯
⎯
45
⎯
⎯
15
⎯
⎯
85
⎯
⎯
10
⎯
⎯
6
⎯
⎯
4
⎯
Gate threshold voltage
Rise time
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
ton
tf
Turn-off time
RL = 66.7 Ω
50 Ω
Switching time
Fall time
ID = −1.5 A VOUT
0V
VGS
−10 V
Duty <
= 1%, tw = 10 μs
toff
Total gate charge
(Gate source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“Miller”) charge
Qgd
pF
ns
VDD ∼
− −100 V
VDD ∼
− −160 V, VGS = −10 V,
ID = −2.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
⎯
⎯
⎯
−2.5
A
(Note 1)
IDRP
⎯
⎯
⎯
−10
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = −2.5 A, VGS = 0 V
⎯
⎯
2.0
V
Reverse recovery time
trr
IDR = −2.5 A, VGS = 0 V,
⎯
135
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
0.81
⎯
μC
Marking
J567
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SJ567
ID – VDS
−2.0
−8
−6
−5
−4.8
−10
−8
−15
−4 −15
−4.6
−1.2
−4.4
−4.2
−0.8
VGS = −4 V
−0.4
0
0
−5.75
−5.25
−3
−5
−4.8
−2
−4.6
−4.4
−1
−2
−3
−4
0
0
−5
(V)
VDS
−4.2
VGS = −4 V
−10
−20
ID – VGS
Common source
VDS (V)
Pulse test
25
−4
100
Drain-source voltage
Drain current ID (A)
VDS (V)
Tc = −55°C
VDS = −10 V
−6
−2
−4
−6
Gate-source voltage
−8
Tc = 25°C
−8
Pulse test
−6
ID = −2.5 A
−4
−1.5
−2
0
0
−10
VGS (V)
−0.8
−4
−8
−12
Gate-source voltage
⎪Yfs⎪ – ID
−16
−20
VGS (V)
RDS (ON) – ID
10
10
Common source
Common source
VDS = −10 V
Tc = 25°C
Pulse test
Pulse test
Tc = −55°C
Drain-source ON-resistance
RDS (ON) (Ω)
(S)
−50
VDS – VGS
−2
Forward transfer admittance ⎪Yfs⎪
−40
−10
Common source
25
100
1
0.1
−0.1
−30
Drain-source voltage
−10
0
0
−5.5
−1
Drain-source voltage
−8
Common source
Tc = 25°C
Pulse test
−6
−10
Drain current ID (A)
Drain current ID (A)
−1.6
Common source
Tc = 25°C
Pulse test
ID – VDS
−5
−1
VGS = −10 V
−15
1
0.1
−0.1
−10
Drain current ID (A)
−1
−10
Drain current ID (A)
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2SJ567
RDS (ON) – Tc
IDR – VDS
−10
6
Common source
VGS = −10 V
Pulse test
Common source
−1.2
4
3
Tc = 25°C
(A)
ID = −1.5 A
Drain reverse current IDR
Drain-source ON-resistance
RDS (ON) (Ω)
5
−1.0
2
1
Pulse test
−1
−5
0
−80
−40
0
40
80
120
−0.1
0
160
−3
0.2
Case temperature Tc (°C)
−1
0.4
1
VDS (V)
5
Common source
Vth (V)
Ciss
100
Gate threshold voltage
(pF)
0.8
Vth – Tc
1000
Capacitance C
0.6
Drain-source voltage
Capacitance – VDS
VGS = 0 V
Coss
10
Crss
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
VGS = 0 V
f = 1 MHz
0
−80
Tc = 25°C
1
−0.1
−1
−10
Drain-source voltage
−40
0
40
80
120
160
Case temperature Tc (°C)
−100
VDS (V)
PD – Tc
Dynamic input/output characteristics
30
20
10
0
0
40
80
120
Case temperature Tc (°C)
(V)
−16
VDS = −40 V
−120
−180
−80
−12
Common source
ID = −2.5 A
Tc = 25°C
−8
Pulse test
−80
−40
0
0
160
VDS
−4
VGS
4
8
12
16
Gate-source voltage VGS
VDS (V)
−160
Drain-source voltage
Drain power dissipation PD (W)
40
20
Total gate charge Qg (nC)
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2SJ567
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
3
1
0.5
Duty = 0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
Single pulse
PDM
t
0.01
0.01
0.005
0.003
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
0.001
10 μ
100 μ
1m
10 m
100 m
Pulse width
tw
1
10
(S)
Safe operating area
EAS – Tch
−30
100
100 μs*
ID max (pulse) *
−5
Avalanche energy EAS (mJ)
−10
1 ms*
Drain current ID
(A)
−3
−1
−0.5
−0.3
DC
operation
−0.1
−0.05
−0.03
−0.005
−0.1
80
60
40
20
* Single nonrepetitive pulse
Tc = 25°C
0
25
Curves must be derated
−0.01
100
VDSS max
linearly with increase in
50
100
125
150
Channel temperature Tch (°C)
temperature.
−0.3
75
−1
−3
−10
Drain-source voltage
−30
−100
−300
VDS (V)
15 V
BVDSS
IAR
−15 V
VDD
Test circuit
RG = 25 Ω
VDD = −50 V, L = 25.2 mH
5
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
−
2
V
VDSS
DD
⎝
⎠
2006-11-16
2SJ567
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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