2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −200 V Drain-gate voltage (RGS = 20 kΩ) VDGR −200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −2.5 Pulse (Note 1) IDP −10 Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current IAR −2.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W JEDEC ― Note 1: Ensure that the channel temperature does not exceed 150°C. JEITA SC-64 Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω TOSHIBA 2-7J1B Note 3: Repetitive rating: pulse width limited by maximum channel temperature Weight: 0.36 g (typ.) This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 2SJ567 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = −200 V, VGS = 0 V ⎯ ⎯ −100 μA ID = −10 mA, VGS = 0 V −200 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSS Vth VDS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −1.5 A ⎯ 1.6 2.0 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 410 ⎯ Reverse transfer capacitance Crss ⎯ 40 ⎯ Output capacitance Coss ⎯ 145 ⎯ ⎯ 20 ⎯ ⎯ 45 ⎯ ⎯ 15 ⎯ ⎯ 85 ⎯ ⎯ 10 ⎯ ⎯ 6 ⎯ ⎯ 4 ⎯ Gate threshold voltage Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ton tf Turn-off time RL = 66.7 Ω 50 Ω Switching time Fall time ID = −1.5 A VOUT 0V VGS −10 V Duty < = 1%, tw = 10 μs toff Total gate charge (Gate source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd pF ns VDD ∼ − −100 V VDD ∼ − −160 V, VGS = −10 V, ID = −2.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ −2.5 A (Note 1) IDRP ⎯ ⎯ ⎯ −10 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = −2.5 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time trr IDR = −2.5 A, VGS = 0 V, ⎯ 135 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 0.81 ⎯ μC Marking J567 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ567 ID – VDS −2.0 −8 −6 −5 −4.8 −10 −8 −15 −4 −15 −4.6 −1.2 −4.4 −4.2 −0.8 VGS = −4 V −0.4 0 0 −5.75 −5.25 −3 −5 −4.8 −2 −4.6 −4.4 −1 −2 −3 −4 0 0 −5 (V) VDS −4.2 VGS = −4 V −10 −20 ID – VGS Common source VDS (V) Pulse test 25 −4 100 Drain-source voltage Drain current ID (A) VDS (V) Tc = −55°C VDS = −10 V −6 −2 −4 −6 Gate-source voltage −8 Tc = 25°C −8 Pulse test −6 ID = −2.5 A −4 −1.5 −2 0 0 −10 VGS (V) −0.8 −4 −8 −12 Gate-source voltage ⎪Yfs⎪ – ID −16 −20 VGS (V) RDS (ON) – ID 10 10 Common source Common source VDS = −10 V Tc = 25°C Pulse test Pulse test Tc = −55°C Drain-source ON-resistance RDS (ON) (Ω) (S) −50 VDS – VGS −2 Forward transfer admittance ⎪Yfs⎪ −40 −10 Common source 25 100 1 0.1 −0.1 −30 Drain-source voltage −10 0 0 −5.5 −1 Drain-source voltage −8 Common source Tc = 25°C Pulse test −6 −10 Drain current ID (A) Drain current ID (A) −1.6 Common source Tc = 25°C Pulse test ID – VDS −5 −1 VGS = −10 V −15 1 0.1 −0.1 −10 Drain current ID (A) −1 −10 Drain current ID (A) 3 2006-11-16 2SJ567 RDS (ON) – Tc IDR – VDS −10 6 Common source VGS = −10 V Pulse test Common source −1.2 4 3 Tc = 25°C (A) ID = −1.5 A Drain reverse current IDR Drain-source ON-resistance RDS (ON) (Ω) 5 −1.0 2 1 Pulse test −1 −5 0 −80 −40 0 40 80 120 −0.1 0 160 −3 0.2 Case temperature Tc (°C) −1 0.4 1 VDS (V) 5 Common source Vth (V) Ciss 100 Gate threshold voltage (pF) 0.8 Vth – Tc 1000 Capacitance C 0.6 Drain-source voltage Capacitance – VDS VGS = 0 V Coss 10 Crss Common source VDS = 10 V 4 ID = 1 mA Pulse test 3 2 1 VGS = 0 V f = 1 MHz 0 −80 Tc = 25°C 1 −0.1 −1 −10 Drain-source voltage −40 0 40 80 120 160 Case temperature Tc (°C) −100 VDS (V) PD – Tc Dynamic input/output characteristics 30 20 10 0 0 40 80 120 Case temperature Tc (°C) (V) −16 VDS = −40 V −120 −180 −80 −12 Common source ID = −2.5 A Tc = 25°C −8 Pulse test −80 −40 0 0 160 VDS −4 VGS 4 8 12 16 Gate-source voltage VGS VDS (V) −160 Drain-source voltage Drain power dissipation PD (W) 40 20 Total gate charge Qg (nC) 4 2006-11-16 2SJ567 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse PDM t 0.01 0.01 0.005 0.003 T Duty = t/T Rth (ch-c) = 6.25°C/W 0.001 10 μ 100 μ 1m 10 m 100 m Pulse width tw 1 10 (S) Safe operating area EAS – Tch −30 100 100 μs* ID max (pulse) * −5 Avalanche energy EAS (mJ) −10 1 ms* Drain current ID (A) −3 −1 −0.5 −0.3 DC operation −0.1 −0.05 −0.03 −0.005 −0.1 80 60 40 20 * Single nonrepetitive pulse Tc = 25°C 0 25 Curves must be derated −0.01 100 VDSS max linearly with increase in 50 100 125 150 Channel temperature Tch (°C) temperature. −0.3 75 −1 −3 −10 Drain-source voltage −30 −100 −300 VDS (V) 15 V BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = −50 V, L = 25.2 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V VDSS DD ⎝ ⎠ 2006-11-16 2SJ567 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16