2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 1000 V Drain-gate voltage (RGS = 20 kΩ) VDGR 1000 V Gate-source voltage VGSS ±30 V A 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE 150 W JEDEC ― EAS 910 mJ JEITA ― Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC (Note 1) ID 8 Pulse (Note 1) IDP 24 Drain power dissipation (Tc = 25°C) PD Single pulse avalanche energy (Note 2) Drain current TOSHIBA 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 Ω, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature 3 This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-09 2SK2613 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 800 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Drain-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 1000 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 1.4 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 4 A 2.0 6.0 ⎯ S Input capacitance Ciss ⎯ 2000 ⎯ Reverse transfer capacitance Crss ⎯ 30 ⎯ Output capacitance Coss ⎯ 200 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ⎯ 30 ⎯ ⎯ 100 ⎯ ⎯ 65 ⎯ ⎯ 40 ⎯ ⎯ 25 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr 0V ton 4.7 Ω Turn-ON time Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) ID = 4 A 10 V VGS VOUT RL = 100 Ω Duty < = 1%, tw = 10 μs toff Qgs Gate-drain (“miller”) charge Qgd ns VDD ∼ − 400 V Qg Gate-source charge pF VDD ∼ − 400 V, VGS = 10 V, ID = 8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 8 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 24 A (Note 1) Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V ⎯ ⎯ −1.9 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, ⎯ 1600 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 24 ⎯ μC Marking TOSHIBA K2613 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK2613 ID – VDS ID – VDS 20 Common source Tc = 25°C Pulse test 15 10 5.75 8 Drain current ID (A) 6.0 16 Drain current ID (A) 10 5.5 6 5.25 4 5.0 2 Common source Tc = 25°C Pulse test 15 10 6.5 6.25 12 6.0 5.75 8 5.5 5.25 4 VGS = 4.75 V VGS = 5.0 V 0 0 4 8 12 Drain-source voltage 16 0 20 0 VDS (V) 20 100 VDS – VGS VDS (V) Common source VSD = 20 V Pulse test Drain-source voltage 12 8 80 VDS (V) 20 16 Drain current ID (A) 60 Drain-source voltage ID – VGS 20 40 25 4 100 Common source Tc = 25°C Pulse test 16 ID = 8 A 12 8 4 4 2 Tc = −55°C 0 0 2 4 6 Gate-source voltage 8 0 10 0 VGS (V) 4 8 12 Gate-source voltage 16 20 VGS (V) ⎪Yfs⎪ − ID 100 RDS (ON) − ID 10 Drain-source on resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Common source VSD = 20 V Pulse test 10 25 Tc = −55°C 100 1 0.1 0.1 1 10 5 3 Drain current ID (A) VGS = 10,15 1 0.5 0.3 0.1 0.1 100 Common source Tc = 25°C Pulse test 0.3 1 3 10 30 Drain current ID (A) 3 2006-11-09 2SK2613 RDS (ON) − Tc IDR − VDS 100 (A) Common source VGS = 10 V Pulse test 4 Drain reverse current IDR Drain-source on resistance RDS (ON) (Ω) 5 3 ID = 8 A 2 4 2 1 10 1 10 0.1 3 1 0 −80 −40 0 40 80 Case temperature 0 160 0 Tc (°C) −0.2 −0.8 5 Vth (V) Ciss Gate threshold voltage 1000 Coss 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 Crss 1 10 100 Drain-source voltage −1.0 −1.2 VDS (V) Vth − Tc Capacitance – VDS (pF) −0.6 −0.4 Drain-source voltage 10000 Capacitance C VGS = 0, −1 V 1000 VDS (V) Common source VDS = 10 V ID = 1 mA Pulse test 4 3 2 1 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) PD − Tc Dynamic input/output characteristics 120 80 40 0 0 40 80 Case temperature 120 160 400 VDS 16 12 200 200 8 400 VGS 100 0 0 200 VDS = 100 V 300 20 4 20 40 60 80 VGS (V) 160 Common source ID = 8 A Tc = 25°C Pulse test Gate-source voltage VDS (V) 500 Drain-source voltage Drain power dissipation PD (W) 200 0 100 Total gate charge Qg (nC) Tc (°C) 4 2006-11-09 2SK2613 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 Single pulse t T Duty = t/T Rth (ch-c) = 0.833°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 100 1000 100 μs * 10 ID max (continuous) Drain current ID (A) Avalanche energy EAS (mJ) 50 30 ID max (pulsed) * 1 ms * 5 3 DC Operation Tc = 25°C 1 0.5 0.3 0.1 * Single nonrepetitive pulse 0.05 Tc = 25°C 0.03 Curves must be derated linearly 0.01 1 10 3 10 30 100 Drain-source voltage 300 600 400 200 0 25 VDSS max with increase in temperature. 800 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 3000 10000 VDS (V) 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 26.3 mH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-09 2SK2613 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-09