GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin (TSSOP-8) package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCES VGES VGES 400 ±6 ±8 V ICP 150 A PC (1) PC (2) Tj Tstg 1.1 0.6 150 −55~150 W W °C °C Collector-emitter voltage DC Pulse Gate-emitter voltage Pulse (Note 1) Collector current Collector power dissipation（t＝10 s） (Note 2a) (Note 2b) Junction temperature Storage temperature range V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1.2.3 EMITTER 4 GATE 5.6.7.8 COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-3R1G Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Thermal Characteristics Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Marking Symbol Rating Unit Rth (j-a) (1) 114 °C/W Rth (j-a) (2) 208 °C/W (Note 3) Part No. (or abbreviation code) 8G133 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page. 1 2006-11-02 GT8G133 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 6 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.7 1.05 1.4 V VCE (sat) IC = 150 A, VGE = 4 V ⎯ 2.9 ⎯ V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2500 ⎯ pF ⎯ 1.6 ⎯ ⎯ 1.7 ⎯ ⎯ 1.7 ⎯ ⎯ 2.0 ⎯ Collector-emitter saturation voltage Input capacitance Cies Rise time tr ton Turn-on time Switching time Fall time tf Turn-off time toff 4V 0 51 Ω 2Ω Gate-emitter cut-off voltage VIN: tr < = 100 ns tf < = 100 ns < 1% Duty cycle = μs ≒300V Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a) Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit : mm) FR-4 25.4 × 25.4 × 0.8 (unit : mm) for GATE for COLLECTOR for EMITTER for COLLECTOR for EMITTER for GATE Note 3: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) ※ Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark. 2 2006-11-02 GT8G133 Caution on handling This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design You should be design dV/dt value is below 400 V/μs when IGBT turn off. ●definition of dv/dt The slope of vce from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform (expansion) ●waveform IC IC(begin) VCE IC(end) VCE 90V 30V 0V, 0A dv/dt period 3 ⊿t 2006-11-02 GT8G133 IC – VCE IC – VCE 200 4.0 200 3.5 4.0 120 (A) 3.0 VGE = 5.0 V Collector current IC Collector current IC (A) 3.5 160 2.5 80 40 160 VGE = 5.0 V 3.0 120 2.5 80 40 Common emitter Common emitter Tc = −10°C 0 0 1 2 3 Collector-emitter voltage Tc = 25°C 4 0 0 5 VCE (V) 1 4 VCE (V) IC – VCE VGE = 5.0 V 4.0 160 VGE = 5.0 V (A) 3.5 3.0 120 2.5 80 40 4.0 160 3.5 120 3.0 2.5 80 40 Common emitter Common emitter Tc = 125°C Tc = 70°C 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 1 VCE (V) IC – VCE 4 5 VCE (V) IC – VGE Tc = −10°C VCE = 5 V (A) 160 125 Collector current IC 25 120 70 80 40 1 Tc = −10°C Common emitter VGE = 4 V (A) 3 160 Common emitter Collector current IC 2 Collector-emitter voltage 200 0 0 5 200 Collector current IC (A) Collector current IC 3 Collector-emitter voltage IC – VCE 200 2 2 3 Collector-emitter voltage 4 120 70 125 80 40 0 0 5 VCE (V) 25 1 2 Gate-emitter voltage 4 3 4 5 VGE (V) 2006-11-02 GT8G133 VGE(OFF) – TC VCE (sat) – TC 4 1.6 Common emitter VCE = 5 V 3 Gate-emitter cut-off voltage VGE (OFF) (V) 120 90 2 60 1 IC = 1 mA 1.2 0.8 0.4 Common emitter VGE = 4 V 0 50 100 0 −50 150 0 50 VCE, VGE – QG C – VCE 600 VCE (V) 10000 (pF) Cies Collector-emitter voltage 1000 Capacitance C Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 100 Coes Cres 10 500 5 VGE 400 4 300 3 100 VCE 10 20 30 0 50 Switching Time – IC Switching time (μs) toff ton tf toff tf 1 ton Common emitter VCC = 300 V VGE = 4 V RG = 51 Ω Tc = 25°C tr tr Gate resistance 1 10 3 10 40 2 Gate charge QG (nC) Switching Time – RG Common emitter VCE = 300 V VGE = 4 V IC = 150 A Tc = 25°C Common emitter VCC = 300 V RL = 2.0 Ω Tc = 25°C 200 VCE (V) 10 Switching time (μs) 6 0 0 1000 100 Collector-emitter voltage 1 1 150 Case temperature Tc (°C) Case temperature Tc (°C) 10 1 100 VGE (V) 0 −50 Gate-emitter voltage Collector-emitter saturation voltage VCE (sat) (V) IC = 150 A 100 0.1 0 1000 50 100 Collector current IC RG (Ω) 5 150 200 (A) 2006-11-02 GT8G133 Minimum Gate Drive Area Maximum Operating Area 800 160 Main capacitance CM (μF) Peak collector current ICP (A) 200 Tc = 25°C 120 70 80 40 0 0 2 4 Gate-emitter voltage 6 600 400 VCM = 350 V 200 Tc < = 70°C VGE = 4.0 V 10 Ω < = RG < = 300 Ω 0 0 8 VGE (V) 40 80 120 Peak collector current 6 160 ICP 200 (A) 2006-11-02 GT8G133 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-02