2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) 2SK3844 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 63 S (typ.) • Low leakage current: IDSS = 100 μA (max)(VDS = 60 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 45 Pulse (Note 1) IDP 180 Drain power dissipation (Tc=25℃) PD 45 W JEDEC Single pulse avalanche energy (Note 2) EAS 527 mJ JEITA Avalanche current IAR 45 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 353 μH, IAR = 45 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-17 2SK3844 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V V (BR) DSX Drain-source breakdown voltage ID = 10 mA, VGS = −20 V 35 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 23 A ⎯ 4.1 5.8 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 23 A 32 63 ⎯ S Input capacitance Ciss ⎯ 12400 ⎯ Reverse transfer capacitance Crss ⎯ 700 ⎯ Output capacitance Coss ⎯ 1100 ⎯ ⎯ 18 ⎯ ⎯ 45 ⎯ ⎯ 35 ⎯ ⎯ 200 ⎯ ⎯ 196 ⎯ ⎯ 148 ⎯ ⎯ 48 ⎯ Rise time tr VGS ton Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 23 A 10 V 0V 4.7 Ω Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz RL = 1.3Ω Gate threshold voltage VOUT VDD ∼ − 30 V Duty < = 1%, tw = 10 μs VDD ∼ − 48 V, VGS = 10 V,ID = 45 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR1 ⎯ ⎯ ⎯ 45 A (Note 1) IDRP ⎯ ⎯ ⎯ 180 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr ⎯ 67 ⎯ ns Reverse recovery charge Qrr IDR = 45 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 70 ⎯ nC Marking K3844 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SK3844 ID – VDS 50 7 6 10 5.2 5.5 8 Common source Tc = 25°C Pulse test 7 10 Common Source Tc = 25°C Pulse test 6 5.7 8 80 5.5 (A) (A) 40 ID – VDS 100 ID Drain current Drain current ID 5 30 4.8 20 10 VGS = 4.5 V 60 5.2 40 5 20 4.8 VGS = 4.5 V 0 0 0.2 0.4 0.6 Drain−source voltage 0.8 VDS 0 1.0 0 (V) 0.4 0.8 VDS (V) (A) Drain−source voltage ID Drain current 25 10 Tc = −55°C 100 0 0 2 4 6 Gate−source voltage VGS 0.8 0.6 0.4 45 0.2 ID = 11 A 0 8 0 (V) 23 4 8 Common source VDS = 20 V Pulse test Drain−source ON resistance RDS (ON) (mΩ) (S) ⎪Yfs⎪ Forward transfer admittance 16 VGS 20 (V) RDS (ON) − ID 100 25 100 10 1 1 12 Gate−source voltage Tc = −55°C 100 (V) Common source Tc = 25°C Pulse test ⎪Yfs⎪ − ID 1000 2.0 VDS – VGS 30 20 VDS 1.0 Common source VDS = 20 V Pulse test 40 1.6 Drain−source voltage ID – VGS 50 1.2 Common source Tc = 25°C Pulse test 10 VGS = 10, 15 V 1 10 Drain current 100 ID 1 (A) Drain current 3 100 10 ID (A) 2006-11-17 2SK3844 RDS (ON) − Tc IDR − VDS 100 IDR 8 ID = 45 A 23 6 11 4 2 0 −80 10 1 1 −40 3 5 10 (A) Common source VGS = 10 V Pulse test Drain reverse current Drain−source ON resistance RDS (ON) (mΩ) 10 0 40 Case temperature 80 Tc 120 160 VGS = 0 V Common source Tc = 25°C Pulse test 0 (°C) 0.2 0.4 0.6 0.8 Drain−source voltage 1.0 VDS 1.2 (V) Capacitance – VDS Vth − Tc 100000 Vth (V) Ciss 10000 Gate threshold voltage Coss 1000 Common source VGS = 0 V Crss f = 1 MHz 1 10 Drain−source voltage 3 2 1 0 −80 100 VDS 4 (V) 40 80 120 Tc 160 (°C) Dynamic input/output characteristics 25 50 40 Drain−source voltage 30 20 10 VDS (V) VDS (V) (W) 50 PD 0 Case temperature PD − Tc Drain power dissipation −40 20 40 30 15 VDD = 12 V 24V 20 VGS 48V 10 10 Common source ID = 45 A 5 Tc = 25°C VGS Tc = 25°C 100 0.1 Common source VDS = 10 V ID = 1 mA Pulse test Gate−source voltage Capacitance C (pF) 5 Pulse test 0 0 40 80 Case temperature 120 Tc 0 160 (°C) 0 80 160 Total gate charge 4 0 320 240 Qg (nC) 2006-11-17 2SK3844 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t T Single pulse Duty = t/T Rth (ch-c) = 2.78°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m 1 tw (s) EAS – Tch Safe operating area 1000 600 ID max (Pulse) * 100 ID max (Continuous) EAS (mJ) 300 100 μs * 1ms * Avalanche energy ID (A) 500 Drain current 10 30 10 DC Operation Tc = 25°C 5 500 400 300 200 100 3 0 25 1 0.5 * Single nonrepetitive pulse Tc = 25°C 0.3 Curves linearly 0.1 must be with increase 50 derated in temperature. 1 Drain−source voltage 75 100 Channel temperature (initial) 15 V VDSS max 10 VDS IAR VDD (V) Test circuit RG = 25 Ω VDD = 25 V, L = 353 μH 5 150 (°C) BVDSS 0V 100 125 Tch VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-17 2SK3844 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17