Inchange Semiconductor Product Specification D45C Series Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type D44C Series ・Very low collector saturation voltage ・Fast switching APPLICATIONS ・Designed for various specific and general purpose application ・Shunt and switching regulators ・Low and high frequency inverters converters and etc. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS D45C1,2,3 Collector-base voltage -55 Open emitter -70 D45C10,11,12 -90 D45C1,2,3 -30 Collector-emitter voltage VEBO Emitter-base voltage IC V D45C7,8,9 D45C4,5,6 VCEO UNIT -40 D45C4,5,6 VCBO VALUE -45 Open base V D45C7,8,9 -60 D45C10,11,12 -80 Open collector -5 V Collector current (DC) -4 A ICM Collector current -peak -6 A IB Base current (DC) -1 A PD Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification D45C Series Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER Collector-emitter saturation voltage D45C2,3,5,6,8,9,11,12 D45C1,4,7,10 VBEsat CONDITIONS MIN TYP. MAX UNIT -0.5 V IC=-1A ;IB=-50mA IC=-1A ;IB=-0.1A Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.3 V ICES Collector cut-off current VCE=Rated VCES -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain D45C2,3,5,6,8,9,11,12 40 120 IC=-0.2A ; VCE=-1V D45C1,4,7,10 25 D45C1,4,7,10 10 IC=-1A ; VCE=-1V hFE-2 DC current gain D45C3,6,9,12 fT Transition frequency 20 D45C2,5,8,11 IC=-2A ; VCE=-1V IC=-20mA;VCE=-4V; f=1.0MHz 20 40 MHz Switching times tr Rise time ts Storage time tf Fall time IC=-1.0A; VCC=-20V IB1=-IB2=-0.1A 2 0.2 μs 0.6 μs 0.3 μs Inchange Semiconductor Product Specification D45C Series Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3