Target Specification Datasheet R2J20702NP Peak Current Mode Synchronous Buck Controller with Power MOS FETs REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Description This all-in-one SiP for POL (point-of-load) applications is a multi-chip module incorporating a high-side MOS FET, low-side MOS FET, and PWM controller in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver circuit, making this device suitable for large-current high-efficiency buck converters. In a simple peak-current mode topology, stable operation is obtained in a closed power loop, and a fast converter is easily realized with the addition of simple components. Furthermore, the same topology can be applied to realize converters for parallel synchronized operation with current sharing, and two-phase operation. The package also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose. Features Three chips in one package for high-efficiency and space saving Large average output current (40 A) Wide input voltage range: 8 to 14 V 0.6 V reference voltage accurate to within 1% Wide programmable switching frequency: 200 kHz to 1 MHz Fast response by peak-current-mode topology. Simple current sharing (up to five modules in parallel) Two-phase operation in parallel operation Built-in SBD for boot strapping On/off control Hiccup operation under over load condition Tracking function Thin small package: 56-pin QFN (8 mm 8 mm) Terminal Pb-free/Halogen-free Applications Network equipment Telecommunications equipment Servers POL modules Typical Characteristic Curve Efficiency (%) 95 VIN = 12 V VOUT = 1.8 V L = 320 nH CO = 600 μF Frequency = 500 kHz No airflow Ta = 27°C 90 85 80 75 0 5 10 15 20 25 30 35 40 Iout (A) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 1 of 27 R2J20702NP Target Specification Application Circuit Example VIN BOOT VCIN DRV5 SYNC REG5 REG5 CT IREF ON/OFF VIN (8 V to 14 V) VOUT (1.8 V) SW TRK-SS Controller Chip PGND CS SGND RAMP EO Ishare FB REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 2 of 27 REJ03G1782-0401 Rev.4.01 Jun 17, 2010 VOUT TRK-SS FB REG5 EO SYNC CT IREF Ishare 50 k 50 k ON/OFF REG GOOD OCP REG5 Q Q R S 0.1 V Current sense comparator 50 ns REG GOOD Supervisor RAMP Max. Duty RES RES Max. Duty ON/OFF Pulse generator Error Amp. SGND 0.6 V (1%) (Bi-lateral) OSC Reference current generator ON/OFF CS 490 µA BOOT UVLO SBD (1024 pulses blank) Gate drive logic circuit OCP comparator 1.5 V OCP hiccup control OCP PWM ON/OFF REG GOOD 5.25 V (4%) Regulator DRV5 Idh 22000 55 ns Blanking Active current sensing 5 V (4%) Regulator REG5 DRV5 VCIN Idh PGND SW VOUT 8 V to 14 V VIN R2J20702NP Target Specification Block Diagram Page 3 of 27 R2J20702NP Target Specification VIN VIN VIN VIN VIN SW BOOT VCIN SGND REG5 IREF EO Ishare FB Pin Arrangement 14 13 12 11 10 9 8 7 6 5 4 3 2 1 VIN 15 56 TRK-SS VIN 16 55 CT 54 RAMP VIN 18 53 CS VIN 19 52 SGND VIN 20 51 DRV5 SW 21 50 ON/OFF PGND 22 49 SYNC PGND 23 48 SW 47 SW PGND 25 46 SW PGND 26 45 SW PGND 27 44 SW PGND 28 43 SW VIN 17 VIN SGND PGND 24 PGND PGND PGND 37 38 39 40 41 42 SW PGND 36 SW PGND 35 SW 34 PGND 33 PGND 32 PGND 31 PGND 30 PGND 29 PGND SW (Top view) Package: 56-pin QFN (8 mm × 8 mm, 0.5-mm pin pitch) Note: All die-pads (three pads in total) should be soldered to PCB. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 4 of 27 R2J20702NP Target Specification Pin Description Pin Name Pin No. VIN 10 to 20 SW 9, 21, 40 to 48 Description Remarks Input voltage for the buck converter. Switching node. Connect a choke coil between the SW pin and dc output node of the converter. PGND 22 to 39 SGND 6, 52 VCIN 7 Input voltage for the control circuit. Should be externally connected to VIN. BOOT 8 Bootstrap voltage pin. A bootstrap capacitor should be connected between the BOOT and SW pin. To be supplied +5 V through the internal SBD. REG5 5 +5 V logic power-supply output. Requires decoupling from the GND plane by a capacitance 0.1 F. ON/OFF 50 Signal disable pin. Disabled when ON/OFF pin is in the low state. IREF 4 Reference current generator for the IC. Should be connected via 27 k to the SGND pin. CT 55 Timing capacitor pin for the oscillator. This pin has a select function for operation in slave mode. If the pin voltage is <1 V or >4 V, the IC operates in slave mode. SYNC 49 I/O pin for synchronous operation. TRK-SS 56 Start-up timing control input. FB 1 Feedback voltage input for the closed loop. When IC works as a slave module in multiphase power supply, FB pin should connected to REG5 pin. EO 3 Error amplifier output pin. Requires connection to an RC circuit for loop compensation. Ishare 2 For current-sharing bus. Simply connect the Ishare pins of all devices to get balanced current. RAMP 54 RAMP signal input pin for peak current mode PWM control. CS 53 Current output pin of active current sensing circuit. Appropriate resistance is required between CS and the GND plane. DRV5 51 +5.25 V generator output for driving power MOS FETs. Requires decoupling from the GND plane by a capacitance from 0.1 F to 1.0 F. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Ground of the power stage. Should be externally connected to SGND. Ground of the IC chip. Should be externally connected to PGND. Page 5 of 27 R2J20702NP Target Specification Absolute Maximum Ratings (Ta = 25°C) Item Symbol Power dissipation ON/OFF pin voltage SYNC pin voltage Voltage on other pins REG5 current Ishare current TRK-SS dc current IREF current EO sink current Pt(25) Pt(110) Iout Vin (dc), Vcin (dc) Vin (ac), Vcin (ac) Vsw (dc) Vsw (ac) Vboot (dc) Vboot (ac) Von/off Vsync Vic Ireg5 Ishare Itrk Iref Ieo Operating junction temperature Storage temperature Tj-opr Tstg Average output current Input voltage Switch node voltage BOOT pin voltage Notes: 1. 2. 3. 4. Rating 25 8 40 –0.3 to +16 20 16 20 22 25 –0.3 to VIN –0.3 to +5.5 –0.3 to (REG5 + 0.3) –10 to 0 –500 to 0 0 to 1 –120 to 0 0 to 2 Unit W –40 to +150 –55 to +150 °C °C A V V V V V V mA A mA A mA Note 1 1 2 2, 4 2 2, 4 2 2, 4 2 2 2 3 3 3 3 3 Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110°C. Rated voltages are relative to voltages on the SGND and PGND pins. For rated current, (+) indicates inflow to the chip and (–) indicates outflow. Ratings for which “ac” is indicated are limited to within 100 ns. Safe Operating Area 50 Average Output Current (A) 45 40 35 30 25 20 15 VIN = 12 V VOUT = 1.5 V fsw = 465 kHz L = 0.32 μH 10 5 0 0 25 50 75 100 125 150 175 PCB Temperature (°C) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 6 of 27 R2J20702NP Target Specification Electrical Characteristics (Ta = 25°C, VIN = VCIN = 12 V, unless otherwise specified) Supply 5-V regulator 5.25-V regulator Remote On/off Reference current generator Oscillator SYNC and pulse generator Error amplifier Item VIN start threshold VIN shutdown threshold UVLO hysteresis Input bias current Symbol VH VL dUVL Iin Min 6.8 6.45 — 20 Typ 7.2 6.85 0.35 *1 50 Max 7.6 7.25 — 80 Unit V V V mA Input shutdown current Isd 1.3 2.3 3.3 mA Output voltage Line regulation Vreg Vreg-line 4.8 –5 5.0 0 5.2 +5 V mV Load regulation Output voltage Vreg-load Vdrv –8 5.04 –3 5.25 +2 5.46 mV V Disable threshold Enable threshold Voff Von 1.0 2.0 1.3 2.5 1.6 3.0 V V Input current IREF pin voltage Ion/off VIref 0.5 2.6 2.0 2.7 5.0 2.8 A V Von/off = 1 V Riref = 27 k CT oscillating frequency SW switching frequency CT higher trip voltage CT lower trip voltage CT source current CT sink current Fct Fsw Vhct Vlct Ict-src Ict-snk — 418 — — –176 144 930 *1 465 3 *1 2 *1 –160 160 — 512 — — –144 176 kHz kHz V V A A CT = 68 pF CT = 68 pF CT = 68 pF CT = 68 pF CT = 1.5 V CT = 3.5 V CT threshold for twophase operation Vct-two 3.6 4.0 4.4 V CT threshold for synchronous operation SYNC frequency SYNC high voltage SYNC low voltage SYNC input threshold Vct-one 0.8 1.0 1.2 V Fsync Vh-sync Vl-sync Vsync 418 4.0 0 1.0 465 5.0 — 2.0 512 — 1.0 3.0 kHz V V V CT = 68 pF Rsync = 51 k to GND Rsync = 51 k to REG5 CT = 0 V or 5 V Feedback voltage Input bias current Output source current Vfb Ifb Io-src 594 –0.1 150 600 0 200 606 +0.1 250 mV A A TRK-SS = 1 V FB = 0.6 V EO = 4 V, FB = 0 V Output sink transient current Voltage gain Band width Io-snk 5.0 10.6 19.0 mA EO = 1 V, FB = 1 V Av BW — — 80 *1 15 *1 — — dB MHz Rshare 70 100 130 k Resistance connected to the Ishare pin Note: Test Conditions CT = 68 pF, Duty cycle = 50% On/off = 0 V VIN = 10 to 16 V Ireg = 0 to 10 mA EO = 0 V. Ishare = 1 V 1. These are reference values for design and have not been 100% tested in production. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 7 of 27 R2J20702NP Target Specification (Ta = 25°C, VIN = VCIN = 12 V, unless otherwise specified) Current sense Note: Item CS current ratio Symbol Idh/Ics Min — Typ 22000 *1 Leading edge blanking time Max — — Unit — ns TLD — 55 * CS comparator delay to output Td-cs — 50 * — ns OCP comparator threshold on CS pin Hiccup interval RAMP offset voltage Vocp 1.43 1.5 1.57 V Tocp Vramp-dc 1.98 79 2.20 94 — 490 * 2.42 109 — ms mV A CS offset current Ics-dc 1 1 1 Test Conditions CT = 68 pF CS = 0 V 1. These are reference values for design and have not been 100% tested in production. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 8 of 27 R2J20702NP Target Specification Description of Operation Peak Current Control The control IC operates in a current-programmed control mode, in which the output of the converter is controlled by the choice of the peak current from the high-side MOS FET. The current from this MOS FET is sensed by an active current-sensing circuit (ACS), the output current of which is 1/22000 (54 ppm) of the MOS FET current. The ACS current is then converted to a certain voltage by the external resistor on the CS pin. The CS voltage is fed to the RAMP pin by an external connection, then compared with the current-control signal which is determined from the error amplifier output voltage (EO) via an NPN transistor and resistor network. To start with, the RES pulse from the pulse generator resets a latch, then the high-side MOS FET is turned on. The latch output (Q bar) is toggled when the voltage on RAMP reaches the level of the current-control signal on EO, the high-side MOS FET is turned off, and the low-side MOS FET is turned off after a certain dead-time interval. The IC remains in this state until the arrival of the next RES pulse. Since current information is used in the control loop, loop compensation design for the converter is simple and easy. Maximum Duty-Cycle Limitation If the current-sense comparator output is not toggled 50-ns prior to the arrival of the next RES pulse, an internal maximum duty pulse is generated and forces toggling of the SR latch. So, the duty cycle of the high-side MOS FET is limited by the maximum duty period. The maximum duty period of the high-side MOS FET depends on its switching frequency. Maximum duty period = 1 – 50 ns Fsw OCP Hiccup Operation Once the voltage of CS exceeds 1.5 V, OCP hiccup circuit disables switching operation of the IC and MOS FETs. Internal circuitry also pulls the TRK-SS pin down to SGND. The IC is turned off for a period of 1024 RES pulses; after this has elapsed, switching operation of the IC is restarted from the soft-start state. UVLO and On/off Control When VIN (=Vcin) is below the start-up voltage, that is, is in the UVLO condition, functioning of the IC is disabled. The oscillator is turned off, both high- and low-side MOS FETs are turned off, and the TRK-SS pin is pulled down. Furthermore, if the ON/OFF pin is in the low state or left open, functioning of the IC is disabled and both MOS FETs are turned off. Relationship between FB Pin and a Pull-down MOS FET on TRK-SS Pin When R2J20702NP works as a slave module in a multi-phase power supply, FB pin should be connected to REG5 pin. In this case, the pull-down MOS FET on TRK-SS pin does not be turned on. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 9 of 27 R2J20702NP Target Specification Oscillator and Pulse Generator The frequency of oscillation is set by the value of the external capacitor connected to the CT pin. This frequency is twice as high as the actual switching frequency. The frequencies are determined by the following equations: Oscillator frequency; Fct = 160 A / {2 (CT(F) + 18 pF) 1 V} Switching frequency; Fsw = 0.5 Fct (in Hz) (Hz) When the chip is operating in standalone mode or as the master chip for parallel operation, it requires a capacitor on the CT pin. In this case, the SYNC pin outputs a synchronization signal with a frequency of Fsw. In operation as a slave chip, the CT pin must be connected to SGND or REG5, after which it acts as an input pin for the synchronized operation by external clock. The internal circuit is synchronized its rising edge when CT<0.8 V, falling edge when CT>4.4 V. In two-phase operation in parallel configuration, the CT pin should be at a voltage over 4.4 V. Mode Item Standalone Master Slave –0° Slave –180° CT pin SYNC pin Synchronizing trigger Has a cap. Output mode — Has a cap. Output mode — < 0.8 V Input mode Rising > 4.4 V Input mode Falling The internal RES pulse and maximum duty-cycle-control pulses are produced from the signal at half the oscillator frequency in standalone and master operating modes. In slave mode, internal pulses are produced from the externally supplied input signal on the SYNC pin. Current Sharing It is easy to obtain balanced-current operation in a parallel configuration due to the application of peak current control. To obtain current-sharing operation, simply tie the buffered error-amplifier outputs of all of the devices (Ishare pins) together. No more than five devices can operate in parallel. Soft Start Both simple soft starting and tracking start-up can be realized with the setup of the TRK-SS pin provided for soft-starts. The error amplifier has three inputs, two of which are designed to give priority to low-level non-inverting inputs for the amplifier. All that is required to realize soft-start operation is to simply attach an RC charging circuit to the TRK-SS pin. The soft-start period is determined by the following equation, with C and R as the values for the RC charging circuit attached to the TRK-SS pin. Tss = –C · R · Ln (1 – 0.6 V / REG5) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 (s) Page 10 of 27 R2J20702NP Target Specification Application Example Start-up Settings Case 1) Standalone or master chip in parallel operation With the RC network on the TRK-SS pin, the voltage on the pin should ramp up slowly. ON/OFF R REG5 0.6 V TRK-SS TRK-SS C Vout TSS = − CR × Ln (1 − 0.6 V / 5 V) Case 2) (s) Coincident tracking The TRS-SS signal for channel two is the voltage from Vout1 after division by a resistor network. Vout1 must be greater than Vout2. Cross-talk is not generated between the channels. REG5 R Channel 1 TRK-SS Vout1 SW C R1 FB Vout1 (nominal) = 0.6 V × (R1 + R2) / R2 R2 From Vout1 REG5 R3 Channel 2 R4 Vout2 SW TRK-SS FB R3 Vout2 (nominal) = 0.6 V × (R3 + R4) / R4 R4 Vout1 Output voltage Vout2 Time REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 11 of 27 R2J20702NP Case 3) Target Specification Retiometric tracking The TRS-SS of channel two is tied to TRK-SS of channel 1. No cross talk is observed between the channels. REG5 R Channel 1 TRK-SS Vout1 SW C R1 FB Vout1 (nominal) = 0.6 V × (R1 + R2) / R2 R2 REG5 R Channel 1 TRK-SS Vout2 SW C FB R3 Vout2 (nominal) = 0.6 V × (R3 + R4) / R4 R4 Vout1 Output voltage Vout2 Time REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 12 of 27 R2J20702NP Case 4) R C Target Specification Current sharing or two-phase operation In the case of master–slave operation, the TRK-SS pin on the master device should be attached to an RC network for soft starts. TRK-SS pins of slave devices should be tied to the master’s TRK-SS pin. The error amplifiers on the slave devices can be disabled by pulling up the corresponding FB pins to REG5, and the slave devices do not require loop-compensation networks. REG5 Channel 1 (Master) SW TRK-SS Ishare FB CT Vout1 R1 Vout (nominal) = 0.6 V × (R1 + R2) / R2 R2 R C REG5 Channel 2 (Slave) SW TRK-SS Ishare CT FB To SGND (for current sharing and synchronized operation) To REG5 (for current sharing and two-phase operation) Choice of The Resistance of CS Pin The CS pin is a current-output pin. A current 1/22000 of that of the high-side MOS FET flows through this pin, which also has a dc current offset of 490 A. The converter’s maximum current is determined by the voltage on the CS pin, i.e. 1.5 V, and by the value of the external resistor attached to this pin. The resistance is determined as shown below. Specification: L = 360 nH, Vin = 12 V, Vout = 1.8 V, Fsw = 500 kHz, Iout(max) = 30 A Current through the choke coil is ILpp = (Vin – Vout) Vout / (L Vin Fsw) = 8.5 A (p-p) Peak choke current is the current when Io is at its maximum, i.e. Ilmax = Io(max) + 0.5 ILpp = 30A + 4.25A = 34.25 A Maximum CS pin output current is; Icsmax = Ilmax / 22000 + Ics-dc = 34.25 A / 22000 + 490 A = 2.047 mA The ideal resistance for attachment to the CS pin is RCS = Vcl / Icsmax =1.5 V / 2.047 mA = 733 Therefore choose 750 as the value of the resistor for attachment to the CS pin. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 13 of 27 R2J20702NP Target Specification Output Voltage Setting The error amplifier of the device has an accurate 0.6 V reference voltage. Feedback thus leads to a voltage of about 0.6 V on the FB pin once the converter system has stabilized, so the output voltage is Vout = 0.6 V (R1 + R2) / R2 R REG5 Vout SW TRK-SS C CT R1 FB R2 Loop Compensation Peak-current control makes design in terms of phase margins easier than is the case with voltage control. This is because of differences between the characteristics of the PWM modulator and power stage in the two methods. Figures 1 and 2 show the behavior of the PWM modulator and power stage in the cases of voltage control and peak current control, respectively. −40 dB/dec Gain (dB) −20 dB/dec Gain (dB) freq. (Hz) freq. (Hz) 0 0 Phase (deg) −90 Phase (deg) −180 −180 freq. (Hz) Figure 1 Bode Plot of Modulator + Power Stage (Voltage Mode) freq. (Hz) Figure 2 Bode Plot of Modulator + Power Stage (Peak Curent Mode) Feed-forward current to the modulator in the case of peak-current control means that the system is single pole, so we see a –20 dB/decade cutoff and phase margin of 90° in the Bode plot. In voltage control, the system configures a twopole pole system. That is why rather complicated loop compensation of the error amplifier is required, such as type-III compensation. The design of effective compensation is thus much simpler in the case of peak-current control (refer to figure 3). REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 14 of 27 R2J20702NP Target Specification Rf Vout Cf EO R1 FB R2 0.6 V reference 50 kΩ Amplifier output: to current-sense comparator 50 kΩ Figure 3 Error Amplifier Compensation Design example Specification: L = 360 nH, Co = 600 F, Fsw = 500 kHz, Vin = 12 V, Vout = 1.8 V, R1 = 2 k, R2 = 1 k, RCS = 750 1. Flat-band gain of error amplifier The flat-band gain is; Af = Rf / (R1 // R2) / 2 {R2 / (R1 + R2)} Hence, Rf = 2 Af R1 (1) In the Bode plot, the total gain should be less than 1 (0 dB) at the switching frequency. The total gain at Fsw (= Asw) depends on the flat-band gain, so Af should be expressed as follows. Af = Asw 2 Fsw Co RCS / Nt (2) Here, Nt = Idh / Ics = 22000 In the typical way, the value chosen for Asw is in the range from 0.1 to 0.5, since this produces a stable control loop. The transient response will be faster if a larger Asw is adopted ,but the system might be unstable. We choose 0.25 for Asw in the example below. Af = 0.25 2 500 kHz 600 F 750 / 22000 = 16.06 Rf = 2 16.06 2 k = 64.240 k Therefore, we select a value of 62 k for Rf. 2. Selecting the Cf value to determine the frequency of the zero The frequency of the zero established by Cf and Rf is about ten times the frequency of the pole for the power stage and modulator. We must start with the dc gain of the power stage and modulator. A0 = 2 × Nt / RCS × L × Vin × Fsw SQRT {Vin2 − 8 × L × Vin × Fsw × (VCS0 × Nt / RCS) } ……(3) Here VCS0 is the peak ac voltage on the CS pin when the load current is zero, thus VCS0 = 0.5 RCS (Vin – Vout) Vout / (L Vin Fsw) / 22000 (4) = 0.5 750 (12 V – 1.8 V) 1.8 V / (360 nH 12 V 500 kHz) / 22000 = 0.145 V REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 15 of 27 R2J20702NP Target Specification Equation (3) A0 = = = 2 × Nt / RCS × L × Vin × Fsw SQRT {Vin2 − 8 × L × Vin × Fsw × (VCS0 × Nt / RCS) } ……(3) 2 × 22000 / 750 Ω × 360 nH × 12 V × 500 kHz SQRT {12 V2 − 8 × 360 nH × 12 V × 500 kHz × (0.145 V × 22000 / 750 Ω) } 126.72 SQRT {70.502} = 15.092 The frequency of the pole established by the power stage and modulator is F0 = Nt / (2 Co RCS A0) (5) Thus, F0 = 22000 / (2 600 F 750 15.092) = 516 kHz Therefore, the frequency of the zero established by Cf and Rf is Fzero = 10 F0 = 5.16 kHz Cf = (2 Fzero Rf)–1 = (2 5.16 kHz 62 k)–1 = 497 pF Therefore, we select the value 510 pF for Cf. Basically, the transient response is faster when Cf is smaller, but too small a value will make the system-loop unstable. Gain (dB) Open loop converter −20 dB/dec −40 dB/dec W/ error amp. compensation BW/Af A0 Error amp. unity gain frequency Af −20 dB/dec F0 Freq. (Hz) Asw Fzero BW Fsw Power stage and modulator Figure 4 REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 16 of 27 R2J20702NP Target Specification Study of Vout Accuracy The nominal output voltage is calculated as Vout = VFB (R1 + R2) / R2 (6) Here, the typical feedback voltage is 0.6 V. REG5 R Vout TRK-SS SW C CT R1 FB R2 The accuracy of Vout is strongly dependent on the variation of VFB, R1 and R2. VFB has a variation of 1% and resistance intrinsically has a certain variation. When we take the variation in resistance into account, equation (6) is extended to produce equation (7). Vout = = R1 × K1 + R2 × K2 R2 × K2 R1 × K1 / K2 + R2 R2 × VFB × VFB ……(7) Here, K1 and K2 are coefficients. Both are 1.00 in the ideal case. By equation (6), R1 is chosen as R1 = Vout (typical) VFB (typical) −1 × R2 ……(8) Substituting this expression for R1 into equation (7) yields the following. Vout (typical) Vout = VFB × VFB (typical) −1 × K1 K2 +1 ……(9) Therefore, variation in Vout is expressed as Vout Vout (typical) = REJ03G1782-0401 Rev.4.01 Jun 17, 2010 VFB Vout (typical) × Vout (typical) VFB (typical) −1 × K1 K2 +1 −1 × 100 (%) …… (10) Page 17 of 27 R2J20702NP Target Specification The accuracy of Vout can be estimated by using equation (10). For example, if Vout (typical) = 1.8 V, resistance variation is 1% (i.e. K1, K2 = 1.01 and 0.99), and VFB = 594 mV to 606 mV: Vout Vout (typical) VFB = Vout (typical) 606 mV = 1.8 V × × Vout (typical) VFB (typical) 1.8 V 600 mV −1 × −1 × −1 × K1 K2 1.01 0.99 +1 −1 × 100 (%) …… (10) +1 −1 × 100 (%) +1 −1 × 100 (%) = 2.36% or 594 mV = 1.8 V × 1.8 V 600 mV 0.99 1.01 = −2.31% Therefore, the output accuracy will be 2.3% under the above conditions. Figure 5 shows the relationship between the accuracy of the resistance and the accuracy of the output voltage. The resistor value must have an accuracy of 0.5% if the variation in output voltage from the system is to be kept within two percent across the voltage range from 0.6 to 3.3 V. 3 Vout accuracy (%) 2 1 R = ±0.5% 0 R = ±1% −1 −2 −3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Vout (typical) Figure 5 Vout Accuracy vs. Vout Set Voltage REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 18 of 27 R2J20702NP Target Specification Current Sharing Simply tie the Ishare pins together VOUT SYNC Device 1 Ishare CT REG5 CT REG5 CT REG5 SYNC Device 2 Device N (up to 5) Ishare SYNC Ishare External Synchronization Simply tie the CT pin to GND External clock 5V VOUT SYNC 0V Ishare CT REG5 External clock; Frequency range: 200 kHz to 1 MHz Minimum pulse width: 100 ns Maximum pulse duty cycle: 90% REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 19 of 27 R2J20702NP Target Specification Current Sharing and Synchronization Tie the Ishare and SYNC pins together VOUT SYNC Device 1 (Master) Ishare CT REG5 CT REG5 CT REG5 SYNC Device 2 Ishare SYNC Device N (up to 5) Ishare Two-Phase Operation Tie the Ishare and SYNC pins together. Device 1 (Master) IL1 SYNC Ishare VOUT CT REG5 IL2 Device 2 (Slave) SYNC Ishare CT REG5 2.4 kΩ IL1 IL2 REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 20 of 27 R2J20702NP Target Specification Timing Chart Peak Current Control Max. Duty (Internal signal) RES (Internal signal) 50 ns (typ.) TLD 50 ns (typ.) EO (EO-Vbe) / 2 (Internal signal) RAMP 0V VIN SW 0V The high-side MOS FET is turned off by the max. duty signal. Note: Propagation delay is ignored. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 21 of 27 R2J20702NP Target Specification Oscillator and Pulse Generator 1. Standalone operation or operation as the master chip in a parallel configuration with other chips. 3V CT 2V 5V SYNC 0V Max. Duty (Internal signal) 50 ns (typ.) RES (Internal signal) Note: Propagation delay is ignored. Frequency of oscillation for CT: Fct = 160 µA 2 × (CT(F) + 18 pF) × 1 V (Hz) Switching frequency Fsw = 0.5 Fct (Hz) Frequency setting range (for Fsw): 200 kHz to 1 MHz (i.e. 400 kHz to 2 MHz for Fct) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 22 of 27 R2J20702NP Target Specification 2. Operation as a slave chip (simple synchronous operation) Should be pulled down to or below 0.8 V. 0.8 V CT 0V 5V SYNC (Input) 0V Max. Duty (Internal signal) 50 ns (typ.) RES (Internal signal) SYNC frequency range: 200 kHz to 1 MHz Note: Propagation delay is ignored. 3. Operation as a slave chip in a parallel configuration (two-phase operation) Should be pulled up to at least 4.4 V. 5V CT 4.4 V 5V SYNC (Input) 0V Max. Duty (Internal signal) 50 ns (typ.) RES (Internal signal) SYNC frequency range: 200 kHz to 1 MHz Note: Propagation delay is ignored. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 23 of 27 R2J20702NP Target Specification Hiccup Operation when the Over-Current Limit (OCL) is Reached TRK-SS Detected OCL 1.5 V CS 1024 pulses skipped 1024 pulses skipped 0V Normal operation Note: Propagation delay is ignored. REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Page 24 of 27 R2J20702NP Target Specification Main Characteristics VL vs. Temperature VH vs. Temperature 7.7 7.3 7.6 7.2 7.5 7.1 7.0 7.3 VL (V) VH (V) 7.4 7.2 7.1 6.9 6.8 6.7 7.0 6.9 6.6 6.8 6.5 6.7 –50 –25 0 25 50 6.4 –50 –25 75 100 125 150 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) Vreg vs. Temperature Vfb vs. Temperature 610 5.10 608 606 5.05 Vfb (mV) Vreg (V) 604 5.00 602 600 598 596 4.95 594 592 4.90 –50 –25 0 25 50 75 100 125 150 Temperature (°C) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 590 –50 –25 0 25 50 75 100 125 150 Temperature (°C) Page 25 of 27 R2J20702NP Target Specification Fsync vs. Temperature Von vs. Temperature 500 2.70 CT = 68 pF 2.65 490 2.60 Von (V) Fsync (kHz) 480 470 460 2.55 2.50 2.45 450 2.40 440 430 –50 –25 2.35 0 25 50 2.30 –50 –25 75 100 125 150 0 25 50 75 100 125 150 Temperature (°C) Temperature (°C) Voff vs. Temperature Fsync vs. CT 1.45 2000 1.40 1.35 Fsync (kHz) Voff (V) 1000 1.30 1.25 1.20 1.15 1.10 1.05 –50 –25 0 25 50 75 100 125 150 Temperature (°C) REJ03G1782-0401 Rev.4.01 Jun 17, 2010 100 10 100 500 CT (pF) Page 26 of 27 R2J20702NP Target Specification Package Dimensions JEITA Package Code P-HVQFN56-8x8-0.50 RENESAS Code PVQN0056KA-A Previous Code — MASS[Typ.] 0.2g HD D 42 29 29 43 28 28 3.0 0.0 E HE e 43 42 0.3 1.0 C 4 0. Reference Symbol Lp 14 14 ZD A1 A c1 c 3.0 Index mark 56 y 1 b b1 0.0 0.4 1.0 1 15 3.0 15 ZE 56 3.0 Dimension in Millimeters Min Nom Max D 7.95 8.00 8.05 E 7.95 8.00 8.05 A2 A 0.95 A1 0.005 b 0.20 0.25 0.30 b1 0.23 e 0.50 Lp 0.40 0.50 0.60 x y 0.05 y1 t HD 8.10 8.20 8.30 HE 8.10 8.20 8.30 ZD 0.75 ZE 0.75 c 0.17 0.22 0.27 c1 0.20 Ordering Information Part Name R2J20702NP#G3 REJ03G1782-0401 Rev.4.01 Jun 17, 2010 Quantity 2500 pcs Shipping Container Taping Reel Page 27 of 27 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0