◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.05Ω(MAX.) ◆Ultra High-Speed Switching ◆SOT-89 Package ◆Gate Protect Diode Built-in ■APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP161A1355PR is an N-channel Power MOSFET with low Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V : Rds (on)= 0.07Ω@ Vgs = 2.5V : Rds (on)= 0.15Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V High Density Mounting : SOT-89 on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■PIN CONFIGURATION ■EQUIVALENT CIRCUIT ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 G Gate 2 D Drain 3 S Source ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Channel Power Dissipation * * When implemented on a ceramic PCB 1526 XP161A1355PR ETR1124_001.doc XP161A11A1PR XP161A1355PR ■ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds=20V, Vgs= 0V - - 10 μA Gate-Source Leak Current Igss Vgs= ±8V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 0.5 - 1.2 V Id= 2A, Vgs= 4.5V - 0.037 0.050 Ω Drain-Source On-State Resistance *1 Rds(on) Id= 2A, Vgs= 2.5V - 0.05 0.07 Ω Id= 0.5A, Vgs= 1.5V - 0.1 0.15 Ω Forward Transfer Admittance *1 | Yfs | Id= 2A, Vds= 10V - 10 - S Body Drain Diode Forward Voltage Vf If= 4A, Vgs= 0V - 0.85 1.1 V *1 Effective during pulse test. Dynamic Characteristics Ta = 25℃ PARAMETER SYMBOL Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss CONDITIONS Vds= 10V, Vgs=0V f= 1MHz MIN. TYP. MAX. UNITS - 390 - pF - 210 - pF - 90 - pF Switching Characteristics Ta = 25℃ PARAMETER SYMBOL Turn-On Delay Time td (on) Rise Time tr Turn-Off Delay Time td (off) Fall Time tf CONDITIONS Vgs= 5V, Id=2A Vdd= 10V MIN. TYP. MAX. UNITS - 10 - ns - 15 - ns - 85 - ns - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 62.5 - ℃/W 1527 XP161A1355PR XP161A11A1PR ■TYPICAL PERFORMANCE CHARACTERISTICS 1528 XP161A11A1PR XP161A1355PR ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (11) Standardized transition Thermal Resistance vs. Pulse Width 1529