Power MOS FET ◆P-Channel Power MOS FET ■Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.075Ω (max) ●Cellular and portable phones ◆Ultra High-Speed Switching ◆SOP-8 Package ●On-board power supplies ●Li-ion battery systems ■General Description ■Features The XP132A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V ) ■Pin Configuration : Rds (on) = 0.115Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP-8 ■Pin Assignment S １ ８ D PIN NUMBER PIN NAME S ２ ７ D 1 ∼ 3 Ｓ Source 4 Ｇ Gate 5 ∼ 8 Ｄ Drain S ３ ６ G ４ ５ D D FUNCTION SOP-8 （TOP VIEW） ■Equivalent Circuit １ ８ ２ ７ ３ ６ ４ ５ ■Absolute Maximum Ratings Ta=25 C O PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Vdss Vgss Id Idp Idr Pd -20 +12 -5 -20 -5 2.5 V V A A A W O C O C 11 Power Dissipation (note) P-Channel MOS FET ( 1 device built-in ) Channel Temperature Tch 150 Storage Temperature Tstg -55 ~ 150 ( note ) : When implemented on a glass epoxy PCB 735 XP132A1275SR ■Electrical Characteristics DC Characteristics SYMBOL Drain Cut-off Current Gate-Source Leakage Current Idss Vds = - 20V , Vgs = 0V - 10 µA Igss Vgs = ± 12V , Vds = 0V ±1 µA Gate-Source Cut-off Voltage Vgs (off ) - 0.5 MAX - 1.2 V 0.075 Ω Id = - 3A , Vgs = - 2.5V 0.092 0.115 Ω | Yfs | Id = - 3A , Vds = - 10V 8 Vf If = - 5A , Vgs = 0V - 0.85 - 1.1 V SYMBOL CONDITIONS TYP MAX Ta=25°C UNITS Forward Transfer Admittance ( note ) Forward Voltage TYP 0.06 Rds ( on ) Id = -1mA , Vds = - 10V MIN Id = - 3A , Vgs = - 4.5V Drain-Source On-state Resistance ( note ) Body Drain Diode CONDITIONS Ta=25°C UNITS PARAMETER S ( note ) : Effective during pulse test. Dynamic Characteristics PARAMETER Input Capacitance Ciss Output Capacitance Coss Feedback Capacitance Crss MIN Vds = - 10V , Vgs = 0V f = 1 MHz 770 pF 440 pF 180 pF Switching Characteristics 11 SYMBOL Turn-on Delay Time td ( on ) 10 ns Rise Time tr Vgs = - 5V , Id = - 3A 25 ns Turn-off Delay Time td ( off ) Vdd = - 10V 45 ns Fall Time tf 40 ns MIN TYP MAX Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) 736 CONDITIONS Ta=25°C UNITS PARAMETER SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W XP132A1275SR ■Typical Performance Characteristics DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25℃ -20 -4.5V 25℃ Ta=-55℃ -16 Drain Current :Id (A) -16 Drain Current :Id (A) Vds=-10V, Pulse Test -20 -3.5V -3V -5V -4V -2.5V -12 -8 -2V -4 125℃ -12 -8 -4 Vgs=-1.5V 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 Drain-Source Voltage :Vds (V) Drain-Source On-State Resistance :Rds (on) (Ω) Drain-Source On-State Resistance :Rds (on) (Ω) 0.16 Id=-5A -3A 0.08 0.04 0 -4 -5 Pulse Test, Ta=25℃ 1 Vgs=-2.5V 0.1 -4.5V 0.01 0 -2 -4 -6 -8 -10 0 -5 -10 -15 -20 Gate-Source Voltage :Vgs (V) Drain Current :Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Pulse Test 0.2 0.16 Id=-5A 0.12 Vgs=-2.5V -3A 0.08 -3A, -5A -4.5V 0.04 0 -50 Vds=-10V, Id=-1mA 0.6 Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Drain-Source On-State Resistance :Rds (on) (Ω) -3 DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25℃ 0.12 -2 Gate-Source Voltage :Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE 0.2 -1 11 0.4 0.2 0 -0.2 -0.4 -0.6 0 50 100 Ambient Temp. :Topr (℃) 150 -50 0 50 100 150 Ambient Temp. :Topr (℃) 737 XP132A1275SR CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Ciss 1000 Coss Crss 100 10 tf 100 td(off) tr 10 td(on) 1 0 -5 -10 -15 -20 0 -2 -4 -6 -8 -10 Drain-Source Voltage:Vds (V) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Vds=-10V, Id=-5A, Ta=25℃ Ta=25℃, Pulse Test -20 Reverse Drain Current:Idr (A) -10 Gate-Source Voltage:Vgs (V) Vgs=-5V, Vdd≒-10V, PW=10μs, duty≤1%, Ta=25℃ 1000 Switching Time:t (ns) 10000 Capacitance:C (pF) SWITCHING TIME vs. DRAIN CURRENT Vgs=0V, f=1MHz, Ta=25℃ -8 -6 -4 -2 0 -16 -4.5V -12 -2.5V -8 Vgs=0V,4.5V -4 0 0 10 20 30 40 0 Gate Charge:Qg (nc) -0.2 -0.4 -0.6 -0.8 -1 Source-Drain Voltage:Vsd (V) 11 Standardized Transition Thermal resistance:γs(t) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a) = 50℃/W (Implemented on a glass epoxy PCB) 10 1 Single Pulse 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Pulse Width:PW (sec) 738 1 10 100