XP131A1520SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.02Ω (max) Ultra High-Speed Switching SOP - 8 Package ■ General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems ■ Features The XP131A1520SR is a N-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.015Ω ( Vgs = 10V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.02Ω ( Vgs = 4.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Operational Voltage : The small SOP-8 package makes high density mounting possible. High density mounting : SOP - 8 ■ Pin Configuration 4.5V ■ Pin Assignment S 1 8 D S 2 7 D S 3 6 D G 4 5 D PIN NAME FUNCTION 1-3 S Source 4 G Gate 5-8 D Drain PIN NUMBER u SOP - 8 Top View ■ Equivalent Circuit ■ Absolute Maximum Ratings Ta=25 OC RATINGS UNITS Vdss Vgss Id Idp Idr Pd 30 + 20 10 40 10 2.5 V V A A A W Channel Temperature Tch 150 O C Storage Temperature Tstg -55 to 150 O C PARAMETER 1 8 2 7 3 6 4 5 N - Channel MOS FET ( 1 device built-in ) Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Power Dissipation (note) ( note ) : When implemented on a glass epoxy PCB 361 XP131A1520SR Power MOSFET ■ Electrical Characteristics DC characteristics PARAMETER SYMBOL CONDITIONS Drain Cut-off Current Gate-Source Leakage Current Idss Igss Vds = 30 , Vgs = 0V Vgs = ± 20 , Vds = 0V Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V Drain-Source On-state Resistance ( note ) Rds ( on ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage MIN TYP 1.0 Id = 5A , Vgs = 10V MAX Ta=25°C UNITS 10 µA ±1 µA 2.5 V 0.015 0.02 Ω Id = 5A , Vgs = 4.5V 0.012 0.016 | Yfs | Id = 5A , Vds = 10V 20 Vf If = 10A , Vgs = 0V 0.8 1.1 V SYMBOL CONDITIONS TYP MAX Ta=25°C UNITS Ω S ( note ) : Effective during pulse test. Dynamic characteristics PARAMETER u MIN Input Capacitance Ciss 1370 pF Output Capacitance Coss Crss Vds = 10V , Vgs = 0V 740 f = 1 MHz 280 pF pF PARAMETER SYMBOL CONDITIONS Turn-on Delay Time td ( on ) Rise Time Turn-off Delay Time tr td ( off ) Fall Time tf Feedback Capacitance Switching characteristics MIN TYP MAX Ta=25°C UNITS 20 ns Vgs = 5V , Id = 5A 25 ns Vdd = 10V 40 ns ns 20 Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) 362 SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W ■ Electrical Characteristics Drain Current vs. Drain/Source Voltage Pulse Test, Ta=25℃ 40 10V 35 4V 3.5V 30 Pulse Test 40 5V 4.5V 35 30 3V Drain Current:Id (A) Drain Current:Id (A) Drain Current vs. Gate/Source Voltage 25 20 15 10 Vgs=2.5V 5 25 20 15 Topr=25℃ 10 125℃ -55℃ 5 0 0 0 1 2 3 4 5 0 1 Drain/Source Voltage:Vds (V) Drain/Source On-State Resistance :Rds (on) (Ω) Drain/Source On-State Resistance :Rds (on) (Ω) 5 0.04 0.03 Id=10A 5A 0.01 Pulse Test, Ta=25℃ 0.1 u Vgs=4.5V 10V 0.01 0.001 0 0 2 4 6 8 0 10 10 20 30 40 Gate/Source Voltage:Vgs (V) Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Pulse Test 0.04 0.03 Vgs=4.5V 0.02 Id=10A 5A 5A, 10A 0.01 10V 0 -50 Pulse Test, Ta=25℃ 0.8 Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) 0.05 Drain/Source On-State Resistance :Rds (on) (Ω) 4 Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25℃ 0.02 3 Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage 0.05 2 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -25 0 25 50 75 100 Ambient Temp. :Topr (℃) 125 150 -50 -25 0 25 50 75 100 125 150 Ambient Temp. :Topr (℃) 363 XP131A1520SR Power MOSFET ■ Electrical Characteristics Capacitance vs. Drain/Source Voltage Vgs=0V, f=1MHz, Ta=25℃ Ciss 1000 Coss Crss Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃ 1000 Switching Time:t (ns) 10000 Capacitance:C (pF) Switching Time vs. Drain Current tf 100 td(off) tr td(on) 100 10 0 5 10 15 30 0 5 10 15 20 Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage Vds=10V, Id=10A, Ta=25℃ Pulse Test, Ta=25℃ 40 35 8 Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) 25 Drain/Source Voltage:Vds (V) 10 u 20 6 4 2 30 25 4.5V 20 Vgs=-4.5V, 0V 15 10 5 0 0 0 10 20 30 40 50 0 Gate Charge:Qg (nc) 0.2 0.4 0.6 0.8 1 Source/Drain Voltage:Vsd (V) Stanardized Transition Thermal Resistance:γs(t) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a) = 50 OC/W ( Implemented on a glass epoxy PCB ) 10 1 Single Pulse 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Pulse Width:PW (s) 364 1 10 100