Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 (TC=25˚C) Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 6.0±0.3 1.0±0.1 R0.5 R0.5 0 to 0.4 2.54±0.3 W 1.3 ■ Electrical Characteristics 3.4±0.3 0.8±0.1 30 PC Ta=25°C 8.5±0.2 14.7±0.5 emitter voltage 2SD1251A Unit: mm 60 VCEO +0 2SD1251 V 80 1.5–0.4 Collector to 60 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 2SD1251A 2 2.0 2SD1251 base voltage 4.4±0.5 Collector to 0.5max. +0.4 Symbol 1.1max. 3.0–0.2 Parameter 1.5max. 4.4±0.5 ■ Absolute Maximum Ratings 1.0±0.1 1.5±0.1 10.0±0.3 Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 30 µA Emitter cutoff current IEBO VEB = 8V, IC = 0 1 mA VCEO(sus)*2 IC = 0.2A, L = 25mH hFE1 VCE = 3V, IC = 0.1A 40 hFE2*1 VCE = 3V, IC = 1A 30 Collector to emitter 2SD1251 voltage 2SD1251A Forward current transfer ratio 60 V 80 160 Base to emitter voltage VBE VCE = 3V, IC = 1A 1.2 V Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.4A 1 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 0.5MHz *1h FE2 *2V CEO(sus) Rank classification Rank Q P O hFE2 30 to 60 50 to 100 80 to 160 1 MHz Test circuit 50/60Hz mercury relay X IC(A) 0.2 L 25mH 0.1 120Ω 6V Y 1Ω 15V G 60/80 VCE(V) Note: Ordering can be made by the common rank (OP rank hFE2 = 50 to 160) in the rank classification. 1 Power Transistors 2SD1251, 2SD1251A PC — Ta IC — VCE IC — VBE 2.4 40 (1) 30 20 3.2 TC=25˚C IB=35mA 2.0 10 25˚C TC=100˚C 30mA 25mA 1..6 20mA 15mA 1.2 10mA 0.8 VCE=3V 2.8 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 5mA –25˚C 2.4 2.0 1.6 1.2 0.8 0.4 (2) 0.4 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 Collector output capacitance Cob (pF) 1 3000 TC=100˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 25˚C –25˚C 100 30 10 3 0.1 0.3 1 3 t=5ms 3 IC 10ms 1 300ms 0.3 0.03 0.01 1 3 10 30 2SD1251A 2SD1251 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 100 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 I CP IE=0 f=1MHz TC=25˚C (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 2.4 300 1 0.1 10 Collector current IC (A) Area of safe operation (ASO) 30 2.0 1000 1 0.01 0.03 3 1.6 3000 TC=100˚C 300 1.2 Cob — VCB 1000 3 0.8 10000 VCE=3V Forward current transfer ratio hFE IC/IB=5 TC=25˚C 10 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 30 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 1 Time t (s) 10 102 103 104