ROHM RXH100N03

Data Sheet
4V Drive Nch MOSFET
RXH100N03
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8)
(5)
(1)
(4)
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RXH100N03
 Inner circuit
Taping
TB
2500

(8)
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
VGSS
ID
IDP
IS
Pulsed
ISP
PD
Power dissipation
Channel temperature
Range of storage temperature
*1
*1
Limits
Unit
30
20
10
V
V
A
36
1.6
36
A
A
A
2.0
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
62.5
C / W
*2
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(7)
(6)
(5)
(3)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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1/6
2011.04 - Rev.A
Data Sheet
RXH100N03
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
9.5
13
ID=10A, VGS=10V
-
12
17
m ID=10A, VGS=4.5V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
13
18
Forward transfer admittance
l Yfs l*
8.0
-
-
S
ID=10A, VDS=10V
Input capacitance
Ciss
-
800
-
pF
VDS=10V
Output capacitance
Coss
-
270
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
140
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
10
-
ns
ID=5A, VDD 15V
Rise time
tr *
td(off)*
-
45
-
ns
VGS=10V
-
50
-
ns
RL=3.0
tf *
-
15
-
ns
RG=10
Turn-off delay time
Fall time
ID=10A, VGS=4.0V
Total gate charge
Qg *
-
11.0
-
nC
ID=10A, VDD 15V
Gate-source charge
Qgs *
Qgd *
2.4
4.8
-
nC
nC
VGS=5V
Gate-drain charge
-
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
Conditions
V
Is=10A, VGS=0V
*Pulsed
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2/6
2011.04 - Rev.A
Data Sheet
RXH100N03
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.1 Typical Output Characteristics(Ⅰ)
10
10
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 3.5V
8
DRAIN CURRENT : ID[A]
8
DRAIN CURRENT : ID[A]
Ta=25°C
Pulsed
6
4
VGS= 2.5V
2
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 3.5V
6
4
2
VGS= 2.5V
0
0
0
0.2
0.4
0.6
0.8
1
0
100
6
8
10
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= 10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
Ta=25°C
Pulsed
VGS= 4.0V
VGS= 4.5V
VGS= 10V
10
.
1
0.001
0
1
2
0.1
3
1
10
100
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
100
VGS= 4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
4
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : ID[A]
2
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
1
10
100
0.1
DRAIN-CURRENT : ID[A]
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1
10
100
DRAIN-CURRENT : ID[A]
3/6
2011.04 - Rev.A
Data Sheet
RXH100N03
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
100
VGS= 4.0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
1
10
VDS= 10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
100
0.1
1
10
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
SOURCE CURRENT : Is [A]
VGS=0V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
Ta=25°C
Pulsed
ID= 5.0A
40
30
ID= 10.0A
20
10
0
0
0.5
1
1.5
0
SOURCE-DRAIN VOLTAGE : VSD [V]
5
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10
10000
tf
1000
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
100
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
100
tr
10
8
6
4
Ta=25°C
VDD=15V
ID= 10A
RG=10Ω
Pulsed
2
td(on)
1
0
0.01
0.1
1
10
100
0
DRAIN-CURRENT : ID[A]
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© 2011 ROHM Co., Ltd. All rights reserved.
5
10
15
20
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.04 - Rev.A
Data Sheet
RXH100N03
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
10000
1000
Operation in this area is limited by RDS(ON)
(VGS=10V)
Ciss
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
100
1000
Crss
100
PW =100us
10
PW = 10ms
Coss
0.1
Ta=25°C
f=1MHz
VGS=0V
10
PW =1ms
1
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
DC operation
0.01
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
0.1
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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5/6
2011.04 - Rev.A
Data Sheet
RXH100N03
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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Fig.2-2 Gate Charge Waveform
6/6
2011.04 - Rev.A
Notice
Notes
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R1120A