ROHM RP1E070XN

Data Sheet
4V Drive Nch MOSFET
RP1E070XN
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
MPT6
(Single)
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
(6)
(5)
(4)
(1)
(2)
(3)
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RP1E070XN
Taping
TR
1000

(6)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Drain current
Source current
(Body Diode)
7
A
18
1.6
A
A
Continuous
ID
Pulsed
Continuous
IDP
IS
*1
Pulsed
ISP
*1
18
A
PD
*2
2.0
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
62.5
C / W
Power dissipation
Channel temperature
Range of storage temperature
(4)
∗2
 Absolute maximum ratings (Ta = 25C)
Parameter
(5)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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1/6
2011.02 - Rev.A
Data Sheet
RP1E070XN
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
20
28
ID=7A, VGS=10V
-
25
35
m ID=7A, VGS=4.5V
-
28
39
ID=7A, VGS=4.0V
Forward transfer admittance
l Yfs l*
4.5
-
-
S
ID=7A, VDS=10V
Input capacitance
Ciss
-
390
-
pF
VDS=10V
Output capacitance
Coss
-
150
-
pF
VGS=0V
Zero gate voltage drain current
Reverse transfer capacitance
Crss
-
70
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
7
-
ns
ID=3.5A, VDD 15V
Rise time
tr *
td(off) *
-
30
-
ns
VGS=10V
-
30
-
ns
RL=4.3
tf *
-
8
-
ns
RG=10
Total gate charge
Qg *
-
5.8
-
nC
ID=7A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.5
2.3
-
nC
nC
VGS=5V
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=7A, VGS=0V
*Pulsed
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2/6
2011.02 - Rev.A
Data Sheet
RP1E070XN
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.1 Typical Output Characteristics(Ⅰ)
7
7
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
5
VGS= 2.8V
4
3
5
VGS= 2.8V
3
2
VGS= 2.5V
1
0
0
0
0.2
0.4
0.6
0.8
0
1
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
10
1000
Ta=25°C
Pulsed
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= 10V
Pulsed
DRAIN CURRENT : ID[A]
VGS= 2.5V
4
2
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
100
10
VGS= 4.0V
VGS= 4.5V
VGS= 10V
1
0.001
0
1
2
0.1
3
1
GATE-SOURCE VOLTAGE : VGS[V]
10
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
1000
VGS= 4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
6
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
6
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
1
0.1
1
10
0.1
DRAIN-CURRENT : ID[A]
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1
10
DRAIN-CURRENT : ID[A]
3/6
2011.02 - Rev.A
Data Sheet
RP1E070XN
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 4.0V
Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
1
0.1
1
VDS= 10V
Pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
10
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
10
ID= 3.5A
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
SOURCE CURRENT : Is [A]
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
Ta=25°C
Pulsed
ID= 7.0A
40
30
20
10
0
0
0.5
1
1.5
0
2
SOURCE-DRAIN VOLTAGE : VSD [V]
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Dynamic Input Characteristics
Fig.11 Switching Characteristics
10
1000
tf
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
VDD= 15V
VGS=10V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
10
DRAIN-CURRENT : ID[A]
100
td(on)
10
8
6
4
Ta=25°C
VDD= 15V
ID= 7A
Pulsed
2
tr
1
0
0.01
0.1
1
10
0
DRAIN-CURRENT : ID[A]
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© 2011 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
12
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.02 - Rev.A
Data Sheet
RP1E070XN
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
10000
1000
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
Operation in this area is limited by RDS(ON)
(VGS=10V)
Ciss
1000
Crss
100
Coss
100
10
PW =100us
PW =1ms
1
PW = 10ms
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
Ta=25°C
f=1MHz
VGS=0V
10
DC operation
0.01
0.01
0.1
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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5/6
2011.02 - Rev.A
Data Sheet
RP1E070XN
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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2011.02 - Rev.A
Notice
Notes
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R1120A