ROHM RMW150N03

Data Sheet
4.5V Drive Nch MOSFET
RMW150N03
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
(8)
(6)
(5)
5.0
6.0
Features
1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
3) Low voltage drive(4.5V drive).
(7)
0.5
PSOP8
(1) (2)
(3)
(4)
0.4
1.27
0.5
1pin mark
0~0.1
0.22
0.9
5.0
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RMW150N03
 Inner circuit
Taping
TB
2500

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
VGSS
ID
IDP *1
IS
Pulsed
ISP
PD
Power dissipation
Channel temperature
Range of storage temperature
*1
(8)
Limits
Unit
30
20
15
V
V
A
60
2.5
60
A
A
A
3.0
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Limits
Unit
41.7
C / W
*2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
(7)
(6)
(5)
(3)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 MOUNTED ON 40mm×40mm Cu BOARD
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*2 MOUNTED ON 40mm×40mm Cu BOARD
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1/6
2011.03 - Rev.A
Data Sheet
RMW150N03
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
VGS (th)
1.0
-
2.5
V
-
6.5
9.1
-
9.0
12.6
Static drain-source on-state
resistance
*
RDS (on)
Forward transfer admittance
m
VDS=10V, ID=1mA
ID=15A, VGS=10V
ID=15A, VGS=4.5V
l Yfs l*
10
-
-
S
ID=15A, VDS=10V
Input capacitance
Ciss
-
831
-
pF
VDS=15V
Output capacitance
Coss
-
337
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
95
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
12
-
ns
ID=7.5A, VDD 15V
tr *
-
38
-
ns
VGS=10V
td(off)*
-
34
-
ns
RL=2.0
tf *
-
9
-
ns
RG=10
Total gate charge
Qg *
-
15
-
nC
ID=15A, VDD 15V
Gate-source charge
Qgs *
Qgd *
-
2.6
3.0
-
nC
nC
VGS=10V
Gate-drain charge
Rise time
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=2.5A, VGS=0V
*Pulsed
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2/6
2011.03 - Rev.A
Data Sheet
RMW150N03
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.1 Typical Output Characteristics(Ⅰ)
15
15
14
13
12
12
VGS= 10V
VGS= 4.5V
VGS= 3.5V
11
10
Ta=25°C
Pulsed
13
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
14
Ta=25°C
Pulsed
9
8
VGS= 3.0V
7
6
5
10
9
8
7
6
5
4
4
3
3
2
VGS= 10.0V
VGS= 4.5V
VGS= 3.5V
VGS= 3.0V
11
VGS= 2.5V
2
VGS= 2.5V
1
1
0
0
0
0.2
0.4
0.6
0.8
0
1
2
Fig.3 Typical Transfer Characteristics
8
10
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= 10V
Pulsed
10
DRAIN CURRENT : ID[A]
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.001
Ta=25°C
Pulsed
VGS= 4.5V
VGS= 10V
10
.
1
0
1
2
3
4
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
100
100
VGS= 4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
4
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.01
0.1
1
10
100
0.01
DRAIN-CURRENT : ID[A]
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0.1
1
10
100
DRAIN-CURRENT : ID[A]
3/6
2011.03 - Rev.A
Data Sheet
RMW150N03
Fig.8 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.7 Forward Transfer Admittance
vs. Drain Current
100
VGS=0V
Pulsed
VDS= 10V
Pulsed
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
100
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
1
10
100
0
0.5
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1.5
Fig.10 Switching Characteristics
20
10000
Ta=25°C
Pulsed
ID= 7.5A
15
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
td(off)
ID= 15.0A
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
SOURCE-DRAIN VOLTAGE : VSD [V]
10
tf
1000
100
td(on)
5
10
0
1
tr
0
5
10
0.01
15
0.1
10
100
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
Fig.11 Dynamic Input Characteristics
10000
10
Ciss
8
CAPACITANCE : C [pF]
GATE-SOURCE VOLTAGE : VGS [V]
1
6
4
Ta=25°C
VDD=15V
ID=15A
RG=10Ω
Pulsed
2
1000
100
Crss
Ta=25°C
f=1MHz
VGS=0V
Coss
10
0
0
5
10
15
0.01
20
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
TOTAL GATE CHARGE : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.1
4/6
2011.03 - Rev.A
Data Sheet
RMW150N03
Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.13 Maximum Safe Operating Aera
1000
10
DRAIN CURRENT : ID (A)
100
PW =100us
10
PW = 1ms
1
PW =10ms
0.1
DC operation
Ta = 25°C
Single Pulse
Mounted on a COPPER board
0.01
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
Operation in this area is limited by
RDS(ON) (VGS=10V)
0.001
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 41.7 °C/W
<Mounted on a COPPER board>
0.01
0.001
0.1
1
10
0.0001
100
DRAIN-SOURCE VOLTAGE : VDS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
5/6
2011.03 - Rev.A
Data Sheet
RMW150N03
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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6/6
2011.03 - Rev.A
Notice
Notes
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R1120A