Data Sheet 10V Drive Nch MOSFET SP8K80 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Built-in G-S protection diode. 2) Small surface mount package(SOP8). (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (8) (7) (6) (5) (1) (2) (3) (4) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) SP8K80 Inner circuit Taping TB 2500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Continuous Pulsed Continuous IDP IS *1 Pulsed ISP *1 Avalanche current Avalanche energy IAS EAS *2 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *4 Source current (Body Diode) *3 *2 (8) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Limits Unit 500 30 0.5 V V A 2 0.5 A A 2 0.25 0.017 A A mJ 2 0.2 55 to 150 W C C (7) ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25°C *3 Limited only by maximum channel temperature allowed. *4 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet SP8K80 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 10 A VGS=30V, VDS=0V 500 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 9.0 11.7 ID=0.25A, VGS=10V l Yfs l* 0.1 - - S VDS=10V, ID=0.25A Input capacitance Ciss - 23.5 - pF VDS=25V Output capacitance Coss - 36.5 - pF VGS=0V Reverse transfer capacitance Crss - 2.4 - pF f=1MHz Turn-on delay time td(on) * - 10 - ns VDD 250V, ID=0.25A tr * - 18 - ns VGS=10V Turn-off delay time td(off) * - 25 - ns RL=1000 Fall time tf * Qg * Qgs * Qgd * - 170 - ns RG=10 - 3.8 - nC VDD 250V - 1.3 1.6 - nC nC ID=0.5A VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward voltage Symbol VSD * Unit V Conditions IS=0.25A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet SP8K80 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 0.5 0.1 Ta=25°C Pulsed 0.08 VGS=10.0V VGS=10.0V VGS=8.0V VGS=8.0V VGS=7.0V VGS=7.0V 0.4 VGS=6.5V Drain Current : ID [A] VGS=6.5V 0.06 Drain Current : ID [A] VGS=6.0V VGS=5.0V 0.04 VGS=6.0V Ta=25°C Pulsed 0.3 0.2 VGS=5.0V 0.02 0.1 VGS=4.5V VGS=4.5V 0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 5 6 7 8 9 10 6 VDS=10V pulsed VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Drain Currnt : ID [A] 4 Fig.4 Gate Threshold Voltage vs. Channel Temperature 1 0.01 5 4 3 2 0.001 2.0 3.0 4.0 5.0 6.0 7.0 -50 8.0 0 100 150 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 25 VGS=10V pulsed Static Drain-Source On-State Resistance : RDS(on) [Ω] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 50 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance RDS(on) [Ω] 3 Drain-Source Voltage : VDS [V] VGS=10V pulsed 20 ID=0.50A 15 10 ID=0.25A 5 0 0.1 1 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 50 100 150 Channel Temperature : Tch [℃] 3/6 2011.10 - Rev.A Data Sheet SP8K80 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 1 1 VGS=0V pulsed Source Current : IS [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 0.001 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.1 1 0 0.5 Drain Current : ID [A] FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.5 2 Fig.10 Switching Characteristics 20 10000 VDD≒250V VGS=10V RG=10Ω Ta=25°C Pulsed Ta=25°C Pulsed 18 tf 16 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [W] 1 Source-Drain Voltage : VSD [V] 14 12 ID=0.5A 10 8 ID=0.25A td(off) 100 tr 6 10 4 td(on) 2 1 0 0.01 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 1000 12 Ta=25°C VDD=250V ID=0.5A Pulsed Ta=25°C f=1MHz VGS=0V Coss 100 Capacitance : C [pF] 10 Gate-Source Voltage : VGS [V] 0.1 Gate-Source Voltage : VGS [V] 8 6 4 Ciss Crss 10 1 2 0.1 0.01 0 0 1 2 3 4 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.10 - Rev.A Data Sheet SP8K80 Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.14 Maximum Safe Operating Area 10 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25°C Single Pulse:1unit 1 1 Drain Current : ID [ A ] Normalized Transient Thermal Resistance : r（t） 10 0.1 0.01 PW = 100μs 0.1 PW = 1ms PW = 10ms 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Ta=25°C Single Pulse:1unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 DC operation 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 Pulse width : Pw (s) 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Reverse Recovery Time vs. Source Current 1000 Reverse Recovery Time : trr [ns] Ta=25°C di/dt=50A/μs VGS=0V Pulsed 100 10 0.1 1 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet SP8K80 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A