Data Sheet 2.5V Drive Nch MOSFET RTF016N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) 0.2Max. TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol : PU Application Switching Packaging specifications Inner circuit Package Type Code Basic ordering unit (pieces) RTF016N05 Taping TL 3000 (3) ∗2 ∗1 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage VDSS 45 V Gate-source voltage VGSS 12 V Drain current Source current (Body Diode) Unit Continuous ID 1.6 A Pulsed Continuous IDP IS *1 6.4 0.6 A A Pulsed ISP *1 6.4 A PD *2 0.8 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 156 C / W Power dissipation Channel temperature Range of storage temperature (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A Data Sheet RTF016N05 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=12V, VDS=0V 45 - - V ID=1mA, VGS=0V Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 1 A VDS=45V, VGS=0V Gate threshold voltage VGS (th) 0.5 - 1.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS (on)* - 140 190 ID=1.6A, VGS=4.5V - 150 210 m ID=1.6A, VGS=4.0V - 200 280 ID=1.6A, VGS=2.5V Forward transfer admittance l Yfs l* 1.5 - - S ID=1.6A, VDS=10V Input capacitance Ciss - 150 - pF VDS=10V Zero gate voltage drain current Output capacitance Coss - 40 - pF VGS=0V Reverse transfer capacitance Crss - 15 - pF f=1MHz Turn-on delay time td(on) * - 8 - ns ID=0.8A, VDD 25V Rise time tr * td(off) * - 14 - ns VGS=4.5V - 16 - ns RL=31.3 Turn-off delay time Fall time tf * - 10 - ns RG=10 Total gate charge Qg * - 2.3 - nC ID=1.6A, VDD 25V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.8 0.5 - nC nC VGS=4.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=1.6A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A Data Sheet RTF016N05 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 1.6 1.6 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V DRAIN CURRENT : ID[A] 1.2 Ta=25°C Pulsed 1.4 1 VGS= 1.8V 0.8 VGS= 2.0V 0.6 VGS= 1.8V 1.2 DRAIN CURRENT : ID[A] 1.4 0.4 0.2 VGS= 2.0V 0.8 0.6 0.4 0.2 0 Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 1 0 2 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 1 DRAIN CURRENT : ID[A] 4 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 Ta=25°C Pulsed 100 . VGS= 2.5V VGS= 4.0V VGS= 4.5V 10 0.001 0 1 2 0.1 3 1 10 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS= 4.5V Pulsed VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V 1 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 10 0.1 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : ID[A] 3/6 2011.05 - Rev.A Data Sheet RTF016N05 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 2.5V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 10 0.1 VDS= 10V Pulsed 10 0.1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 350 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 ID= 1.6A 300 250 ID= 0.8A 200 150 100 50 0 0 0.5 1 1.5 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Dynamic Input Characteristics Fig.11 Switching Characteristics 10 1000 tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=25V VGS=4.5V RG=10W Pulsed td(off) SWITCHING TIME : t [ns] 1 DRAIN-CURRENT : ID[A] 100 10 tr td(on) 1 8 6 4 Ta=25°C VDD= 25V ID= 1.6A RG=10W Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 TOTAL GATE CHARGE : Qg [nC] 4/6 2011.05 - Rev.A Data Sheet RTF016N05 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Operation in this area is limited by RDS(ON) (VGS=4.5V) DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] Ciss 100 Crss 10 10 PW =100us 1 DC operation PW =1ms PW =10ms 0.1 Coss Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Ta=25°C f=1MHz VGS=0V 1 0.01 0.01 0.1 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse 1 0.1 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=156°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A Data Sheet RTF016N05 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A