Power Transistor (50V, 3A) 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 Structure Epitaxial planar type NPN silicon transistor 1.0 0.9 6.8±0.2 (3) 2.54 2.54 0.45±0.1 1.05 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) 1 W Collector current IC Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ∗2 ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 60 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 1 μA VCB=40V Emitter cutoff current IEBO − − 1 μA VEB=4V VCE (sat) − 0.5 1 V IC/IB=2A/0.2A ∗ hFE 120 − 390 − VCE=3V, IC=0.5A ∗ Transition frequency fT − 90 − MHz VCE=5V, IE=−500mA, f=30MHz ∗ Output capacitance Cob − 40 − pF Collector-emitter saturation voltage DC current transfer ratio Conditions VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/3 2010.04 - Rev.B 2SD1864 Data Sheet Packaging specifications and hFE Package Type hFE 2SD1864 QR Taping Code TV2 Basic ordering unit (pieces) 2500 hFE values are classified as follows: Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves VCE = 3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 5 2 Ta = 100°C 25°C −25°C 1 0.5 0.2 0.1 0.05 45mA 2.5 3.0 40mA 35mA 30mA 25mA 20mA Ta = 25°C 50mA COLLECTOR CURRENT : IC (A) 3.0 10 2.0 15mA 1.5 10mA 1.0 5mA 0.5 50mA 45mA 40mA 35mA 30mA 25mA 2.5 Ta = 25°C 20mA 2.0 15mA 1.5 10mA 1.0 IB = 5mA 0.5 PC = 15W 0.02 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) 1000 1000 Ta = 25°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 VCE = 5V 100 VCE = 3V 50 3V 20 10 5 Ta = 100°C 200 100 50 25°C −25°C 20 10 5 2 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1 0.01 0.02 0.05 0.1 0.2 10 COLLECTOR CURRENT : IC (A) 1000 TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 2 0.5 Ta = −25°C 25°C 0.2 0.1 Ta = 100°C 0.05 0.02 100°C VBE (sat) −25°C 25°C VCE (sat) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 2 5 10 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Ta = 25°C VCE = 5V 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 5001000 EMITTER CURRENT : −IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 40 50 Ta = 25°C 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 20 10 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector curren( ΙΙ ) 5 1 1 30 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current( Ι ) 10 0.5 20 Fig.3 Grounded-emitter output characteristics( ΙΙ ) 500 500 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) 0 0 Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.01 0 IB = 0mA 0 0 1000 Ta = 25°C f = 1MHz IE = 0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage 2010.04 - Rev.B Data Sheet s 0m s =1 m Pw 100 = Pw 2 1 DC COLLECTOR CURRENT : IC (A) 5 0.5 0.2 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ TRANSIENT THERMAL RESISTANCE : Rth (°C/W) 2SD1864 100 10 1 0.1 1 10 100 1 10sec 100sec 1000sec TIME : T (ms) Fig.11 Transient thermal resistance 3/3 2010.04 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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