SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX591 ✪ C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). MAX. 1 W -65 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -80 V IC=-100µ A, IE=0 V(BR)CEO -60 V IC=-10mA, IB=0* V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-60V Collector -Emitter Cut-Off Current ICES -100 nA VCES=-60V Emitter Cut-Off Current IEBO -100 nA VEB=-4V, IC=0 Saturation Voltages VCE(sat) -0.3 -0.6 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* VBE(sat) -1.2 V IC=-1A, IB=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT 150 Output Capacitance Cobo IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* 300 10 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT591 datasheet 3 - 92