SPICE MODELS: DVR5V0W DVR1V8W DVR2V5W DVR3V3W DVR1V8W - DVR5V0W Lead-free Green COMPLEX ARRAY FOR VOLTAGE REGULATORS NEW PRODUCT Features · · Epitaxial Planar Die Construction · · · SOT-363 Selectively Paired NPN Transistors & Zener Diodes for Series Pass Voltage Regulator Circuits Dim Min Max Ideally Suited for Automated Assembly Processes A 0.10 0.30 Lead Free By Design/RoHS Compliant (Note 1) B 1.15 1.35 C 2.00 2.20 A B C "Green" Device (Note 2) G H Mechanical Data · · Case: SOT-363 · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · K Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 M J D K1 B1 F L E1 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 a Terminal Connections: See Diagram 0.25 8° All Dimensions in mm Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.008 grams (approximate) A1 Maximum Ratings, Total Device NC C1 @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Maximum Ratings, NPN Transistor Symbol Value Unit Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 5 V IC 1 A Symbol Value Unit VF 0.9 V Collector Current - Continuous (Note 3) Maximum Ratings, Zener Element @ TA = 25°C unless otherwise specified Characteristic Forward Voltage Notes: @ IF = 10mA 1. No purposefully added lead. 2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30578 Rev. 4 - 2 1 of 5 www.diodes.com DVR1V8W - DVR5V0W ã Diodes Incorporated NEW PRODUCT Electrical Characteristics, NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 45 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 ¾ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ¾ V IE = 100mA, IC = 0 Collector Cutoff Current ICBO ¾ 1 mA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO ¾ 1 mA VEB = 4V, IC = 0 hFE 150 800 ¾ IC = 100mA, VCE = 1V VCE(SAT) ¾ 0.5 V IC = 300mA, IB = 30mA Cobo ¾ 8 pF VCB = 10V, f = 1.0MHz, IE = 0 fT 100 ¾ MHz OFF CHARACTERISTICS (Note 4) ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Electrical Characteristics, Zener Element @ TA = 25°C unless otherwise specified Maximum Reverse Leakage Current Zener Voltage Range (Note 5) Type Number VCB = 10V, IE = 50mA, f = 100MHz VZ @ IZT IZT IR @ V R Nom (V) Min (V) Max (V) mA mA V DVR1V8W 3.3 3.1 3.5 5 5 1 DVR2V5W 3.9 3.7 4.1 5 3 1 DVR3V3W 4.7 4.4 5.0 5 3 2 DVR5V0W 5.1 4.85 5.36 0.05 5 3 Note: 4. Short duration test pulse used to minimize self-heating effect. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C. DS30578 Rev. 4 - 2 2 of 5 www.diodes.com DVR1V8W - DVR5V0W 1000 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) 150 100 50 100 VCE = 1.0V 0 0 25 50 75 100 125 150 175 1 0.0001 200 .001 1 .1 .01 10 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current (NPN Transistor) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 100 1000 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) COBO, OUTPUT CAPACITANCE (pF) f = 1MHz 10 1 0.1 1 100 10 1 0.0001 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage (NPN Transistor) 50 2V5 1V8 10 Tj = 25 °C f = 1MHz 3V3 CT, TOTAL CAPACITANCE (pF) 30 20 10 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current (NPN Transistor) .001 1000 Tj = 25°C 40 IZ, ZENER CURRENT (mA) NEW PRODUCT 200 Test Current IZ 5.0mA VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 0 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics (DVR1V8W - DVR3V3W) DS30578 Rev. 4 - 2 2 10 3 of 5 www.diodes.com 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 6 Total Capacitance vs Nominal Zener Voltage (DVR1V8W - DVR3V3W) DVR1V8W - DVR5V0W 100 1000 Tj = 25 °C f = 1MHz NEW PRODUCT 900 CT, TOTAL CAPACITANCE (pF) IZ, ZENER CURRENT (uA) 800 700 600 500 400 300 200 VR =1V VR = 2V 10 100 1 0 0 1 2 4 3 6 5 VZ, ZENER VOLTAGE (V) Fig. 7 Zener Breakdown Characteristics (DVR5V0W) Ordering Information Notes: 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 8 Total Capacitance vs Nominal Zener Voltage (DVR5V0W) (Note 6) Device Marking Code Packaging Shipping DVR1V8W-7 VR01 SOT-363 3000/Tape & Reel DVR2V5W-7 VR02 SOT-363 3000/Tape & Reel DVR3V3W-7 VR03 SOT-363 3000/Tape & Reel DVR5V0W-7 VR04 SOT-363 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM XXXX XXXX = Product Type Marking Code, See Table Above, e.g., VR01 = DVR1V8W YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Sample Applications VCC = 6.0V Sample Application for DVR5V0W: R17= 560W VCC9 = 6.0V Vo(nom) = 5.0V Io = 100mA Iq(typical8) = 0.5mA @ Io = 0mA Typical8 Vreg(load) = 0.2V from Io = 100mA to 0mA R1 = 560R Q1 Vo(nom) = 5.0V Z1 DVR5V0W DS30578 Rev. 4 - 2 R Load 4 of 5 www.diodes.com DVR1V8W - DVR5V0W NEW PRODUCT VCC = 4.3V Sample Application for DVR3V3W: VCC9 = 4.3V R17= 3700W Vo(nom) = 3.3V Io = 100mA Iq(typical8) = 0.7mA @ Io = 0mA Typical8 Vreg(load) = 0.21V from Io = 100mA to 0mA R1 = 370R Q1 Vo(nom) = 3.3V Z1 DVR3V3W R Load VCC = 3. 5V Sample Application for DVR2V5W: R17= 250W VCC9 = 3.5V Vo(nom) = 2.5V Io = 100mA Iq(typical8) = 0.91mA @ Io = 0mA Typical8 Vreg(load) = 0.13V from Io = 100mA to 0mA R1 = 250R Q1 Vo(nom) = 2. 5V Z1 DVR2V5W R Load VCC = 2. 8V Sample Application for DVR1V8W: R17= 450W VCC9 = 2.8V Vo(nom) = 1.8V Io = 100mA Iq(typical8) = 0.55mA @ Io = 0mA Typical8 Vreg(load) = 0.25V from Io = 100mA to 0mA R1 = 450R Q1 Vo(nom) = 1. 8V Z1 DVR1V8W Notes: R Load 7. Resistor R1 not included. 8. Typical performance shown is under setup and operating conditions specified in the sample applications. 9. Recommended VCC(min) ~ Vo(nom) + 1V. DS30578 Rev. 4 - 2 5 of 5 www.diodes.com DVR1V8W - DVR5V0W