DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 35mΩ @ VGS = -4.5V -6.0A 45mΩ @ VGS = -2.5V -5.2A -20V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Low Input Capacitance Low On-Resistance Fast Switching Speed ESD protected Up To 3KV Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability DC-DC Converters Motor Control Power management functions Analog Switch • • Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – MatteTin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0013 grams (approximate) • • • • Drain TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View ESD PROTECTED TO 3kV Gate Gate Protection Diode Top View Pin-Out Source Equivalent Circuit Ordering Information (Note 3) Part Number DMP2035UVT-7 DMP2035UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. 20P Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2035UVT Document number: DS35190 Rev. 5 - 2 Mar 3 YM Marking Information 20P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated DMP2035UVT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) VGS = -4.5V t<10s Steady State Continuous Drain Current (Note 5) VGS = -2.5V t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID -7.2 -5.7 A ID -5.2 -4.1 A Units V V A -6.2 -4.9 -2.0 -24 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Thermal Characteristics ID Value -20 ±12 -6.0 -4.8 IS IDM A A A @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 4) Value 1.2 106 74 2.0 65 46 11.8 -55 to 150 RθJA Total Power Dissipation (Note 5) PD Steady State t<10s Steady State Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Symbol Min Typ BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±10 VGS(th) -0.4 -0.7 VGS(th)/△TJ ⎯ 2.5 |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ 23 30 41 18 -0.7 35 45 62 ⎯ -1.0 Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1610 157 145 9.4 15.4 2.5 3.3 17 12 94 42 14 4 2400 210 200 14.1 23.1 ⎯ ⎯ 33 19 150 64 25 8 △ RDS (ON) Max Unit Test Condition V µA µA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V -1.5 V VDS = VGS, ID = -250μA ⎯ mV/°C mΩ S V ID = -250μA , Referenced to 25°C VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -4.0A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -5.5A VGS = 0V, IS = -1A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -10V, VGS = -4.5V ID = -4A ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω ns nC IF =-4.5A, di/dt=100A/µS 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP2035UVT Document number: DS35190 Rev. 5 - 2 2 of 6 www.diodes.com March 2012 © Diodes Incorporated DMP2035UVT 20 25 VGS = 8.0V VDS = -5.0V VGS = 4.5V VGS = 3.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VGS = 2.0V VGS = 3.2V 15 VGS = 3.0V VGS = 2.5V 10 5 15 10 TA = 150°C 5 TA = 125 °C VGS = 1.5V TA = 85°C TA = 25°C 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0.05 0.04 0.03 1 10 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 100 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0.06 0.02 0.1 0 5 0.07 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP2035UVT Document number: DS35190 Rev. 5 - 2 TA = -55°C 3 of 6 www.diodes.com 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.0 0.05 VGS = -4.5V TA = 150°C 0.04 TA = 125°C TA = 85°C 0.03 TA = 25°C 0.02 0.01 TA = -55°C 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 VGS = -2.5V ID = -5A 0.04 0.03 VGS = -4.5V ID = -10A 0.02 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature March 2012 © Diodes Incorporated DMP2035UVT 20 18 1.0 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.2 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 10,000 -IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) TA = 150°C TA = 125°C 1,000 100 TA = 85°C 10 T A = 150°C TA = 125°C 10,000 1,000 TA = 85°C 100 TA = 25°C TA = -55°C 10 TA = -55°C T A = 25°C 1 1 2 4 6 8 10 -VGS, GATE-SOURCE VOLTAGE(V) Fig. 10 Typical Gate-Source Leakage Current vs. Voltage 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 10 10,000 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss 100 8 6 4 2 C rss 0 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Junction Capacitance DMP2035UVT Document number: DS35190 Rev. 5 - 2 4 of 6 www.diodes.com 0 0 4 8 12 16 20 24 28 32 36 40 Qg, TOTAL GATE CHARGE (nC) Fig. 12 Gate-Charge Characteristics March 2012 © Diodes Incorporated DMP2035UVT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 88°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Suggested Pad Layout C C Y1 Y (6x) Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 X (6x) DMP2035UVT Document number: DS35190 Rev. 5 - 2 5 of 6 www.diodes.com March 2012 © Diodes Incorporated DMP2035UVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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